Semiconductor device
First Claim
1. A semiconductor apparatus which is a MOS-type semiconductor apparatus formed using an SOI substrate formed with a support substrate, an insulation layer, and a semiconductor layer sequentially layered, comprising:
- a conductor beneath said insulation layer; and
a threshold-value control circuit which compares signals generated by an oscillator in said semiconductor apparatus to a reference signal inputted from outside, and applies a bias voltage to said conductor based on the difference between both signals.
1 Assignment
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Accused Products
Abstract
Disclosed is a MOS-type semiconductor apparatus which adjusts the threshold voltage to a predetermined value, and lowers leak current and reduces power consumption without lowering the operating speed of transistors. The MOS-type semiconductor apparatus (1) formed using an SOI substrate in which a support substrate (3), an insulation layer (buried oxide film) (2), and a semiconductor layer are sequentially layered comprises conductors (N-wells and P-wells) beneath the insulation layer (2), and a threshold-value control circuit which compares a signal f (soi) generated by an oscillator in the semiconductor apparatus to a reference signal f (ref) inputted from outside, and applies bias voltages Vsub1 and Vsub2 to the conductors (the N-wells and P-wells) based on the difference between both signals.
50 Citations
5 Claims
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1. A semiconductor apparatus which is a MOS-type semiconductor apparatus formed using an SOI substrate formed with a support substrate, an insulation layer, and a semiconductor layer sequentially layered, comprising:
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a conductor beneath said insulation layer; and
a threshold-value control circuit which compares signals generated by an oscillator in said semiconductor apparatus to a reference signal inputted from outside, and applies a bias voltage to said conductor based on the difference between both signals. - View Dependent Claims (2, 3, 4, 5)
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Specification