Surface-type light amplifier device and method of manufacture thereof

• US 20030002146A1
• Filed: 08/23/2002
• Published: 01/02/2003
• Est. Priority Date: 10/10/2000
• Status: Active Grant

• Current Assignee: Watlow Electric Manufacturing Company
• Original Assignee: Agency of Industrial Science and Technology
• Inventors: Shimizu, Mitsuaki
• Granted Patent: US 6,744,798 B2
• Time in Patent Office: Days
• US Class Current: 359/344
• CPC Class Codes: H01S 2301/18 Semiconductor lasers with special structural design for influencing the near- or far-field
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/04257 having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/0655 Single transverse or lateral mode emission
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18391 Aperiodic structuring to influence the near- or far-field distribution

Abstract

A surface-type light amplifier device has an active layer (13) of a light amplification section (11) sandwiched between an n-type semiconductor cladding layer (12) that is an n-type semiconductor layer and a p-type semiconductor multilayer reflecting mirror (14). The light amplification section is attached to a transparent substrate (21) on the side of the n-type semiconductor cladding layer. A plurality of divided electrodes (16) form electrical continuity relative to the p-type semiconductor multilayer reflecting mirror via a p-type cap layer (15) provided on the reflecting mirror. An electrode (18) forming electrical continuity relative to the n-type semiconductor cladding layer is connected to a wiring conductor (20) provided on the surface of the transparent substrate. The device enables amplification of a single, uniform, large-diameter light beam and oscillation of a laser.

Claims

1. A surface-type light amplifier device (1) having a light amplification section (11) that includes a structure of an active layer (13) sandwiched between a p-type semiconductor layer (14) and an n-type semiconductor layer (12) for producing excited carriers and emits a light beam in a direction rising with a specific angle relative to a surface of a support substrate,

said surface-type light amplifier device being characterized in that said light amplification section is attached to a transparent substrate (21) different from a substrate for fabricating said light amplification section and that a light beam emitted from said active layer (13) is transmitted through said transparent substrate.

2. A surface-type light amplifier device according to claim 1, characterized in that said light amplification section is attached to the transparent substrate on a side of said n-type semiconductor layer, and that an electrode for injection of holes formed on said p-type semiconductor layer opposite said n-type semiconductor layer with said active layer intervening therebetween comprises a plurality of divided electrodes (16).

3. A surface-type light amplifier device according to claim 2, characterized in that said active layer included in said light amplification section is sandwiched between said n-type semiconductor layer serving as an n-type semiconductor cladding layer and said p-type semiconductor layer serving as a p-type semiconductor multilayer reflecting mirror, that said light amplification section is attached to said transparent substrate on a side of said n-type superconductor cladding layer, that said plurality of divided electrodes (16) attain electric continuity through said p-type cap layer (15) provided on said p-type semiconductor multilayer reflecting mirror (14), and that an electrode (18) forming electrical continuity relative to the n-type semiconductor cladding layer is connected to a wiring conductor (20) provided on said transparent substrate.

4. A method for fabricating a surface-type light amplifier device (1) having a light amplification section (11) that includes a structure of an active layer (13) sandwiched between a p-type semiconductor layer (14) and an n-type semiconductor layer (12) for producing excited carriers and emits a light beam in a direction rising with a specific angle relative to a surface of a support substrate, said method comprising the steps of:

forming said light amplification section (11) on a structural substrate for forming said light amplification section;

attaching an exposed surface of said light amplification section to a separate transparent substrate (21); and

removing said structural substrate.

5. A method for fabricating a surface-type light amplifier device according to claim 4, characterized in:

that said p-type semiconductor layer, said active layer and said n-type semiconductor layer are formed on said structural substrate in the order mentioned;

that said transparent substrate is attached to an exposed surface of said n-type semiconductor layer; and

that a surface of said p-type semiconductor layer (14) exposed after the removal of said structural substrate is formed with a plurality of divided electrodes (16) for forming electrical continuity relative to said p-type semiconductor layer.