Method and apparatus for marking a bare semiconductor die
First Claim
1. A method of marking a semiconductor die comprising:
- providing a semiconductor die from one of an individual semiconductor die and a semiconductor die on a wafer;
reducing the thickness of said semiconductor die;
applying a tape having optical energy-markable properties to at least a portion of a surface of said semiconductor die;
exposing at least a portion of said tape applied to said semiconductor die to optical energy; and
forming a mark in at least a portion of the tape using said optical energy.
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Accused Products
Abstract
The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multi-level laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electromagnetic radiation.
50 Citations
74 Claims
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1. A method of marking a semiconductor die comprising:
- providing a semiconductor die from one of an individual semiconductor die and a semiconductor
die on a wafer;
reducing the thickness of said semiconductor die;
applying a tape having optical energy-markable properties to at least a portion of a surface ofsaid semiconductor die;
exposing at least a portion of said tape applied to said semiconductor die to optical energy; and
forming a mark in at least a portion of the tape using said optical energy. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74)
- providing a semiconductor die from one of an individual semiconductor die and a semiconductor
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3. The method of claim 3, wherein said thinning process comprises backgrinding.
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24. A manufacturing method for at least one semiconductor die comprising:
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providing a semiconductor wafer including at least one integrated circuit on a first surface thereof for forming part of a portion of a semiconductor die;
reducing at least a portion of a cross-section of said semiconductor wafer;
applying a tape having optical energy-markable properties to at least a portion of a second surface of said semiconductor wafer;
exposing at least a portion of said tape applied to said semiconductor wafer to optical energy; and
forming a mark in at least a portion of the tape by said exposing step.
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48. A method for determining a known good die on a wafer form comprising:
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providing a semiconductor wafer including integrated circuitry on a first surface thereof;
reducing at least a portion of a cross-section of said semiconductor wafer;
testing at least one integrated circuit of said semiconductor wafer for defects, said at least one integrated circuit forming at least a portion of a semiconductor die;
compiling data representing defect testing results;
applying a tape having optical energy-markable properties to at least a portion of a second surface of said semiconductor wafer;
exposing said at least a portion of said tape applied to said semiconductor wafer to optical energy;
forming at least one mark in at least a portion of the tape on at least a portion of said semiconductor wafer; and
encoding said defect testing results onto portions of said wafer using said at least one mark.
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Specification