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High pressure wafer-less auto clean for etch applications

  • US 20030005943A1
  • Filed: 05/02/2002
  • Published: 01/09/2003
  • Est. Priority Date: 05/04/2001
  • Status: Abandoned Application
First Claim
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1. A method for cleaning a processing chamber comprising:

  • introducing a fluorine containing gaseous mixture into a processing chamber;

    creating a plasma from the fluorine containing gaseous mixture in the processing chamber; and

    establishing a chamber pressure corresponding to a threshold ion energy in which ions of the plasma clean inner surfaces of the processing chamber without leaving a residue.

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