Semiconductor device and method for forming the same
First Claim
1. A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
crystallizing the semiconductor film by irradiating a laser light;
forming a gate insulating film comprising silicon oxide over the crystalline semiconductor film by using organic silane;
forming a gate electrode over the gate insulating film;
introducing an impurity element into the crystalline semiconductor film; and
activating the impurity element in the crystalline semiconductor film by heating;
forming an interlayer insulating film over the gate electrode; and
forming a wiring comprising aluminum over the interlayer insulating film.
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Accused Products
Abstract
A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.
A high performance TFT can be realized. The metal silicide layer achieves favorable contact with the source and the drain, and, since it has a lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.
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Citations
24 Claims
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1. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by irradiating a laser light;
forming a gate insulating film comprising silicon oxide over the crystalline semiconductor film by using organic silane;
forming a gate electrode over the gate insulating film;
introducing an impurity element into the crystalline semiconductor film; and
activating the impurity element in the crystalline semiconductor film by heating;
forming an interlayer insulating film over the gate electrode; and
forming a wiring comprising aluminum over the interlayer insulating film. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by irradiating a laser light;
forming a gate insulating film comprising silicon oxide over the crystalline semiconductor film by using organic silane;
forming a gate electrode over the gate insulating film;
introducing an impurity element into the crystalline semiconductor film; and
activating the impurity element in the crystalline semiconductor film by irradiating an infrared light;
forming an interlayer insulating film over the gate electrode; and
forming a wiring comprising aluminum over the interlayer insulating film. - View Dependent Claims (6, 7, 8)
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9. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by irradiating a laser light;
forming a gate insulating film comprising silicon oxide over the crystalline semiconductor film by using organic silane;
forming a gate electrode over the gate insulating film;
introducing an impurity element into the crystalline semiconductor film; and
activating the impurity element in the crystalline semiconductor film by irradiating a laser light;
forming an interlayer insulating film over the gate electrode; and
forming a wiring comprising aluminum over the interlayer insulating film. - View Dependent Claims (10, 11, 12, 14, 15, 16, 18, 19, 20)
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13. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by heating;
forming a gate insulating film comprising silicon oxide over the crystalline semiconductor film by using organic silane;
forming a gate electrode over the gate insulating film;
introducing an impurity element into the crystalline semiconductor film; and
activating the impurity element in the crystalline semiconductor film by heating;
forming an interlayer insulating film over the gate electrode; and
forming a wiring comprising aluminum over the interlayer insulating film.
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17. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by heating;
forming a gate insulating film comprising silicon oxide over the crystalline semiconductor film by using organic silane;
forming a gate electrode over the gate insulating film;
introducing an impurity element into the crystalline semiconductor film; and
activating the impurity element in the crystalline semiconductor film by irradiating an infrared light;
forming an interlayer insulating film over the gate electrode; and
forming a wiring comprising aluminum over the interlayer insulating film.
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21. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by heating;
forming a gate insulating film comprising silicon oxide over the crystalline semiconductor film by using organic silane;
forming a gate electrode over the gate insulating film;
introducing an impurity element into the crystalline semiconductor film; and
activating the impurity element in the crystalline semiconductor film by irradiating a laser light;
forming an interlayer insulating film over the gate electrode; and
forming a wiring comprising aluminum over the interlayer insulating film. - View Dependent Claims (22, 23, 24)
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Specification