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Semiconductor device and method of manufacturing the same

  • US 20030006444A1
  • Filed: 06/05/2002
  • Published: 01/09/2003
  • Est. Priority Date: 07/06/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device in which DRAMs and SRAMs are combined, said device comprising in the SRAM region:

  • a first silicide layer formed on the surface of a diffused layer adjacent to a gate electrode;

    a second silicide layer on the surface of said gate electrode;

    an insulating side wall formed over the sidewall of said gate electrode;

    a first contact hole opened in a first interlayer dielectric formed on top, and exposing said side wall and said first and second silicide layers in the hole;

    a first contact which constitutes a shared contact between said first and second silicide layers through a first plug within said first contact hole;

    a second contact hole opened in a second interlayer dielectric formed on top;

    a first wiring layer formed on this second interlayer dielectric;

    a second contact for connecting electrically said first contact to said first wiring layer through a second plug within said second contact hole;

    a third contact hole opened in said first and second interlayer dielectrics, and exposing said first silicide layer on the surface of said diffused layer in the hole; and

    a third contact for connecting electrically said first silicide layer to said first wiring layer through said second plug within said third contact hole.

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