Semiconductor device

• US 20030006509A1
• Filed: 06/11/2002
• Published: 01/09/2003
• Est. Priority Date: 07/05/2001
• Status: Active Grant

• Current Assignee: Shenzhen Torey Microelectronic Technology Co., Ltd.
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Suzuki, Takehiro, Toyosawa, Kenji
• Granted Patent: US 7,193,328 B2
• Time in Patent Office: Days
• US Class Current: 257/778
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H05K 1/0271 : Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
• CPC Class Codes: H05K 1/189 : characterised by the use of a flexible or folded printed circuit H05K3/326 takes precedence
• CPC Class Codes: H05K 2201/068 : wherein the coefficient of thermal expansion is important
• CPC Class Codes: H05K 2201/09736 : Varying thickness of a single conductor; Conductors in the same plane having different thicknesses
• CPC Class Codes: H05K 2201/09781 : Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
• CPC Class Codes: H05K 2201/10674 : Flip chip
• CPC Class Codes: H05K 2201/2009 : Reinforced areas, e.g. for a specific part of a flexible printed circuit

Abstract

Provided is a semiconductor device which prevents displacement of a semiconductor element and a wiring pattern of a wiring substrate so as to ensure the connection of the semiconductor element and the wiring pattern. The semiconductor device of the present invention includes a semiconductor element and a wiring substrate which is provided with a film substrate and a wiring pattern which is formed on the film substrate, the semiconductor element is connected to the wiring pattern, and the semiconductor element and the wiring substrate are sealed with a resin. A metallic film, made of material having a smaller coefficient of linear thermal expansion than the film substrate, is formed in a region where the wiring pattern is not formed on at least one surface of the film substrate.

Claims

1. A semiconductor device comprising:

(a) a semiconductor element; and

(b) a wiring substrate which is provided with;

a film substrate and a wiring pattern which is formed on the film substrate,

the semiconductor element being connected to the wiring pattern, and the semiconductor element and the wiring substrate being sealed with a resin,

wherein a reinforcing film, made of material having a smaller coefficient of linear thermal expansion than the film substrate, is formed in a region where the wiring pattern is not formed on at least one surface of the film substrate.

2. The semiconductor device according to claim 1, wherein the reinforcing film is made of the same material as the wiring pattern.

3. The semiconductor device according to claim 1, wherein the reinforcing film has a thickness which is not more than that of the wiring pattern.

4. The semiconductor device according to claim 3, wherein the reinforcing film has one-third to two-thirds of the thickness of the wiring pattern.

12. The semiconductor device according to claim 1, wherein the reinforcing film has a shape of triangle, quadrangle, or circle.

14. The semiconductor device according to claim 1, wherein the reinforcing film shields a rays.

15. The semiconductor device according to claim 1, wherein the reinforcing film is formed separately from the wiring pattern.

16. The semiconductor device according to claim 1, wherein the film substrate is made of insulating material such as polyimide resin and polyester resin.

17. The semiconductor device according to claim 1, wherein the reinforcing film is a metallic film which is made of metal.

5. A semiconductor device comprising:

(a) a semiconductor element; and

(b) a wiring substrate which is provided with;

a film substrate and a wiring pattern which is formed on the film substrate,

the semiconductor element being connected to the wiring pattern, and the semiconductor element and the wiring substrate being sealed with a resin,

wherein a plurality of reinforcing films, made of material having a smaller coefficient of linear thermal expansion than the film substrate, is formed independently in a region where the wiring pattern is not formed on at least one surface of the film substrate.

6. The semiconductor device according to claim 5, wherein the reinforcing film is made of the same material as the wiring pattern.

7. The semiconductor device according to claim 5, wherein the reinforcing film has a thickness which is not more than that of the wiring pattern.

8. The semiconductor device according to claim 7, wherein the reinforcing film has one-third to two-thirds of the thickness of the wiring pattern.

9. The semiconductor device according to claim 5, wherein intervals between the reinforcing films adjacent to each other are larger than those between the wiring patterns adjacent to each other.

10. The semiconductor device according to claim 5, wherein the reinforcing films are formed symmetrically on the film substrate.

11. The semiconductor device according to claim 5, wherein the reinforcing films are formed on both surfaces of the wiring substrate.

13. The semiconductor device according to claim 5, wherein the reinforcing films have the shape of triangle or quadrangle, and the reinforcing films are adjacent with their one sides facing to each other.

18. A wiring substrate comprising:

a film substrate having a wiring pattern; and

a reinforcing film,

wherein the reinforcing film, made of material having a smaller coefficient of linear thermal expansion than the film substrate, is formed in a region where the wiring pattern is not formed on the film substrate.

19. A tape carrier, comprising a plurality of wiring substrates on a tape,

the wiring substrate including:

a film substrate having a wiring pattern; and

a reinforcing film, made of material having a smaller coefficient of linear thermal expansion than the film substrate, which is formed in a region where the wiring pattern is not formed on the film substrate.