Dual detection method for end point in chemical mechanical polishing

• US 20030008597A1
• Filed: 07/05/2001
• Published: 01/09/2003
• Est. Priority Date: 07/05/2001
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Tseng, Tung-Ching
• Granted Patent: US 6,579,150 B2
• Time in Patent Office: Days
• US Class Current: 451/6
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 49/003 involving acoustic means
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: B24B 49/12 involving optical means

Abstract

A dual detection method for end point in a chemical mechanical polishing process is described. The dual detection method utilizes both an optical detection device and an acoustical detection device. The acoustical detection device may also be used independently in certain applications without the optical detection device. The acoustical detection device determines an end point and stops the CMP process when a volume of the acoustical emission changes by at least 30% from its initial volume, or preferably changes by at least 50% from its initial volume.

Claims

1. A method for detecting an end point in a chemical mechanical polishing (CMP) process comprising the steps of:

providing a CMP apparatus contained in an enclosure;

mounting an acoustical sensor in said enclosure;

initiating a CMP process on a semiconductor wafer for removing an uppermost coating layer;

monitoring an acoustical emission generated by said CMP process and recording a volume of the emission; and

stopping said CMP process when the volume of the acoustical emission changes by at least 30% from its initial volume.

2. A method for detecting an end point in an CMP process according to claim 1 further comprising the step of stopping said CMP process when the volume of the acoustical signal changes by at least 50% from its initial volume.

3. A method for detecting an end point in an CMP process according to claim 1 further comprising the step of stopping said CMP process when the volume of the acoustical signal decreases by at least 50% from its initial volume.

4. A method for detecting an end point in an CMP process according to claim 1 further comprising the step of stopping said CMP process when the volume of the acoustical signal decreases by at least 5 dB from its initial volume.

5. A method for detecting an end point in an CMP process according to claim 1 further comprising the step of mounting a microphone in said enclosure.

6. A chemical mechanical polishing apparatus equipped with an acoustical end point detection device comprising:

a polishing pad holder for holding a polishing pad thereon;

means for rotating said polishing pad holder;

a sample holder for holding a sample to be polished thereon;

means for rotating and traversing said sample holder on said polishing platen;

an enclosure for enclosing said polishing pad holder and said sample holder; and

an acoustical sensor mounted in said enclosure for sensing acoustically an end point of the polishing process as the point when a change in acoustical emission of at least 30% occurs.

7. A CMP apparatus equipped with an acoustical end point detection device according to claim 6, wherein said acoustical sensor is a microphone.

8. A CMP apparatus equipped with an acoustical end point detection device according to claim 6, wherein said acoustical sensor sensing an end point of the CMP process when a change in acoustical emission of at least 50% occurs.

9. A CMP apparatus equipped with an acoustical end point detection device according to claim 6, wherein said acoustical sensor sensing an end point of the CMP process when a decrease in acoustical emission of at least 50% occurs.

10. A CMP apparatus equipped with an acoustical end point detection device according to claim 6, wherein said acoustical sensor sensing an end point of the CMP process when a 5 dB drop in acoustical emission occurs.

11. A CMP apparatus equipped with an acoustical end point detection device according to claim 6, wherein said CMP apparatus is of the rotary type.

12. A CMP apparatus equipped with an acoustical end point detection device according to claim 6, wherein said CMP apparatus is of the linear type.

14. A dual detection method for an end point in a CMP process according to claim 13 further comprising the step of determining the end point of the CMP process when said acoustical signal produced by said CMP process changes by at least 50% of its initial value.

15. A dual detection method for an end point in a CMP process according to claim 13 further comprising the step of determining the end point of the CMP process when said acoustical signal produced by said CMP process decreases by at least 50% of its initial value.

16. A dual detection method for an end point in a CMP process according to claim 13 further comprising the step of determining the end point of the CMP process when said acoustical signal produced by said CMP process decreases by at least 5 dB from its initial value.

17. A dual detection method for an end point in a CMP process according to claim 13 further comprising the step of projecting and receiving a laser beam to and from a surface of said sample.

18. A dual detection method for an end point in a CMP process according to claim 13 further comprising the step of mounting an acoustical microphone in said enclosure.

19. A dual detection method for an end point in a CMP process according to claim 13, wherein said CMP apparatus is a rotary CMP.

20. A dual detection method for an end point in a CMP process according to claim 13, wherein said CMP apparatus is a linear CMP.

13. A dual detection method for an end point in a chemical mechanical polishing (CMP) process comprising the steps of:

providing a CMP apparatus contained in an enclosure, said CMP apparatus comprises a polishing pad holder equipped with an optical projector and a sensor therein for projecting and receiving an optical signal to and from a surface of a sample being polished through a window in said polishing pad for determining an end point of said CMP process;

mounting an acoustical sensor in said enclosure for sensing and recording an acoustical signal generated by said CMP process;

initiating a CMP process on said sample for removing an uppermost coating layer;

determining an end point of the CMP process upon the occurrence of at least one of the two events;

the optical signal received from said sample surface being indicative of an interface between said uppermost coating layer and an underlying layer; and

the acoustical emission generated by said CMP process changes by at least 30% of its initial value.