Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates and devices formed thereby
First Claim
1. A method of forming a vertical nano-scale electronic device, comprising the steps of:
- forming a substrate comprising a semiconductor layer and a substrate insulating layer on the semiconductor layer;
forming an etching template having a first array of non-photolithographically defined nano-channels extending therethrough, on the substrate insulating layer;
selectively etching the substrate insulating layer to define a second array of nano-channels therein, using the etching template as an etching mask; and
forming an array of semiconductor nano-pillars that extend in the second array of nano-channels and have an average diameter in a range between about 8 nm and about 50 nm.
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Abstract
Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels extending therethrough, is formed on the substrate insulating layer. This etching template may comprise an anodized metal oxide, such as an anodized aluminum oxide (AAO) thin film. The substrate insulating layer is then selectively etched to define a second array of nano-channels therein. This selective etching step preferably uses the etching template as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template. An array of semiconductor nano-pillars is then formed in the second array of nano-channels. The semiconductor nano-pillars in the array may have an average diameter in a range between about 8 nm and about 50 nm. The semiconductor nano-pillars are also preferably homoepitaxial or heteroepitaxial with the semiconductor layer.
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Citations
25 Claims
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1. A method of forming a vertical nano-scale electronic device, comprising the steps of:
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forming a substrate comprising a semiconductor layer and a substrate insulating layer on the semiconductor layer;
forming an etching template having a first array of non-photolithographically defined nano-channels extending therethrough, on the substrate insulating layer;
selectively etching the substrate insulating layer to define a second array of nano-channels therein, using the etching template as an etching mask; and
forming an array of semiconductor nano-pillars that extend in the second array of nano-channels and have an average diameter in a range between about 8 nm and about 50 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16)
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15. A method of forming a vertical nano-scale electronic device, comprising the steps of:
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forming a substrate comprising a semiconductor layer, a substrate insulating layer on the semiconductor layer and a barrier metal layer on the substrate insulating layer;
forming an etching template having a first array of non-photolithographically defined nano-channels extending therethrough, on the substrate insulating layer;
selectively etching the substrate insulating layer for a sufficient duration to define a second array of nano-channels therein, using the etching template as an etching mask; and
forming an array of semiconductor nano-pillars that extend in the second array of nano-channels.
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17. A method of forming a vertical nano-scale electronic device, comprising the steps of:
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forming a substrate comprising a semiconductor layer and a non-aluminum barrier metal layer on the semiconductor layer;
forming an anodic aluminum oxide layer having an array of nano-sized pores therein, on the barrier metal layer;
selectively etching portions of the barrier metal layer extending adjacent bottoms of the nano-sized pores, using the anodic aluminum oxide layer as an etching mask; and
forming an array of semiconductor nano-pillars that extend in the nano-sized pores.
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18. A method of forming a vertical nano-scale opto-electronic device, comprising the steps of:
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forming a substrate comprising a first compound semiconductor layer of first conductivity type that is a composite of first and second III-V semiconductor materials;
forming an electrically insulating layer on the first compound semiconductor layer;
forming a metal thin film on the electrically insulating layer;
converting the metal thin film to an anodized metal oxide layer having an array of nanopores therein;
transferring the array of nanopores in the anodized metal oxide layer into the electrically insulating layer;
epitaxially growing an array of vertical quantum-dot superlattices in the array of nanopores in the electrically insulating layer; and
forming a second compound semiconductor layer of second conductivity type that is a composite of the first and second III-V semiconductor materials, on the array of vertical quantum-dot superlattices.
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19. An opto-electronic device, comprising:
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a substrate comprising a first III-V semiconductor layer;
an electrically insulating layer that extends on the first III-V semiconductor layer and comprises an array of non-photolithographically defined nanopores therein;
an array of vertical quantum-dot superlattices in the array of nanopores; and
a second III-V semiconductor layer on said array of vertical quantum-dot superlattices.
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20. A method of forming a vertical nano-scale field effect transistor, comprising the steps of:
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forming an electrically insulating layer having an array of nanopores therein;
forming an array of monocrystalline semiconductor nano-pillars in the array of nanopores;
forming a plurality of drain regions in the semiconductor nano-pillars; and
forming a gate electrode that at least partially surrounds the semiconductor nano-pillars.
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21. A method of forming a vertical nano-scale field effect transistor array, comprising the steps of:
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forming an array of semiconductor pillars that extend upward from an underlying substrate;
implanting source/drain region dopants into the array of semiconductor pillars and into the substrate to define a respective first source/drain region in each of a plurality of semiconductor pillars in the array and a second source/drain region that extends as a contiguous mesh in the substrate; and
forming a gate electrode that surrounds at least a plurality of the semiconductor pillars in the array.
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22. A method of forming a vertical nano-scale opto-electronic device, comprising the steps of:
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forming a substrate comprising a first compound semiconductor layer of first conductivity type that is a composite of first and second III-V semiconductor materials;
forming an anodized metal oxide layer having an array of nanopores therein, on the first compound semiconductor layer;
epitaxially growing an array of vertical quantum-dot superlattices in the array of nanopores, using the first compound semiconductor layer as a seed layer; and
forming a second compound semiconductor layer of second conductivity type that is a composite of the first and second III-V semiconductor materials, on the array of vertical quantum-dot superlattices. - View Dependent Claims (23, 24)
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25. An opto-electronic device, comprising:
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an electrically insulating layer having an array of non-photolithographically defined nanopores therein; and
an array of vertical quantum-dot compound semiconductor superlattices in the array of nanopores.
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Specification