GaN LED with solderable backside metal
First Claim
1. A light-emitting diode comprising:
- a stack of gallium nitride based layers configured to emit light responsive to an electrical input;
a light-transmissive substrate having a front side and a back side, the gallium nitride based layer stack disposed on the front side, the substrate being light-transmissive for the light produced by the gallium nitride based layer stack; and
a metallization stack including a solderable layer formed on the back side of said substrate, the metallization stack (i) reflecting a portion of the light produced by the gallium nitride based layer stack toward the front side of the substrate, and (ii) attaching the light-emitting diode to an associated support by a soldered bond.
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Accused Products
Abstract
A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).
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Citations
33 Claims
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1. A light-emitting diode comprising:
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a stack of gallium nitride based layers configured to emit light responsive to an electrical input;
a light-transmissive substrate having a front side and a back side, the gallium nitride based layer stack disposed on the front side, the substrate being light-transmissive for the light produced by the gallium nitride based layer stack; and
a metallization stack including a solderable layer formed on the back side of said substrate, the metallization stack (i) reflecting a portion of the light produced by the gallium nitride based layer stack toward the front side of the substrate, and (ii) attaching the light-emitting diode to an associated support by a soldered bond. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A light-emitting element comprising:
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a light emitting diode (LED) including a sapphire substrate having front and back sides, and a plurality of semiconductor layers deposited on the front side of the sapphire substrate, the semiconductor layers defining a light-emitting structure that emits light responsive to an electrical input;
a metallization stack including an adhesion layer deposited on the back side of the sapphire substrate, and a solderable layer connected to the adhesion layer such that the solderable layer is secured to the sapphire substrate by the adhesion layer;
a support structure on which the LED is disposed; and
a solder bond between the LED and the support structure that secures the LED to the support structure. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 19, 20, 25, 26, 27, 29)
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18. A method for fabricating a light-emitting element, the method comprising:
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depositing semiconducting layers on a front side of an electrically insulating substrate wafer such that the semiconducting layers define a light-emissive region that emits light responsive to an electrical current flowing therethrough;
forming electrical contacts contacting selected semiconducting layers;
depositing a metallic bonding layer on a back side of the substrate;
soldering the metallic bonding layer to a support structure; and
connecting the electrical contacts to electrical inputs that supply the electrical current to the light-emissive region.
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- 21. The method as set forth in claim 78, wherein the electrically insulating substrate is a sapphire substrate.
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24. The method as set forth in claim 78, wherein the step of depositing semiconducting layers includes:
depositing a plurality of layers defining a p/n diode structure wherein the layers are selected from a group consisting of AlN, GaN, InN, and alloys thereof.
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32. A light emitting diode (LED) comprising:
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a substrate;
a stack of semiconductor layers arranged on a first side of the substrate, the stack of semiconductor layers configured to emit light responsive to an electrical input; and
a metallization stack arranged on a second side of the substrate opposite the first side, the metallization stack including a plurality of layers, said layers including at least;
(i) a first layer formed from a first material that adheres to the substrate, and (ii) a second layer formed from a second material that is suitable for solder bonding, the second material being different from the first material. - View Dependent Claims (33)
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Specification