Memory and method for replacing defective memory cells in the same
First Claim
1. A memory, comprising a first memory region having at least one memory cell with an associated bit line;
- a second memory region having at least one memory cell with an associated bit line;
a word line at least associated with the memory cell of the first memory region and with the memory cell of the second memory region;
at least one redundant memory cell having one associated bit line; and
a means in order to selectively couple the bit line of the redundant memory cell to the bit line of the memory cell of the first memory region or to the bit line of the memory cell of the second memory region in order to replace a defective memory cell in the first memory region or a defective memory cell in the second memory region.
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Abstract
A memory wherein defective memory cells may be replaced includes a first memory region having at least one memory cell with an associated bit line, a second memory region having at least one memory cell with an associated bit line and a world line associated at least with the memory cell of the first memory region and the memory cell of the second memory region. Further, at least one redundant memory cell having an associated bit line and a means is provided to selectively couple the bit line of the redundant memory cell to the bit line of the memory cell of the first memory region or to the bit line of the memory cell of the second memory region in order to replace a defective memory cell in the first memory region or a defective memory cell in the second memory region.
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Citations
14 Claims
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1. A memory, comprising
a first memory region having at least one memory cell with an associated bit line; -
a second memory region having at least one memory cell with an associated bit line;
a word line at least associated with the memory cell of the first memory region and with the memory cell of the second memory region;
at least one redundant memory cell having one associated bit line; and
a means in order to selectively couple the bit line of the redundant memory cell to the bit line of the memory cell of the first memory region or to the bit line of the memory cell of the second memory region in order to replace a defective memory cell in the first memory region or a defective memory cell in the second memory region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for replacing defective memory cells in a memory including a first memory region having a memory cell with an associated bit line, a second memory region having a memory cell with an associated bit line, a word line at least associated with the memory cell of the first memory region and the memory cell of the second memory region, and at least one redundant memory cell having an associated bit line, wherein the method includes the following step:
selectively coupling the bit line of the redundant memory cell to the bit line of the memory cell of the first memory region or to the bit line of the memory cell of the second memory region in order to replace a defective memory cell in the first memory region or a defective memory cell in the second memory region.
Specification