Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
First Claim
Patent Images
1. A ceramic substrate for apparatuses for use in semiconductor manufacture and/or inspection, wherein the level of α
- -rays radiated from said ceramic substrate exceeds 0.25 c/cm2·
hr and is not higher than 50 c/cm2·
hr.
1 Assignment
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Accused Products
Abstract
The present invention provide a ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in α-rays radiated, and change of thermal conductivity with passage of the time, and which is superior in the temperature controllability.
This invention is related to a ceramic substrate for apparatuses for use in semiconductor manufacture and/or inspection,
wherein the level of α-rays radiated from said ceramic substrate exceeds 0.25 c/cm2·hr and is not higher than 50 c/cm2·hr.
93 Citations
7 Claims
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1. A ceramic substrate for apparatuses for use in semiconductor manufacture and/or inspection,
wherein the level of α - -rays radiated from said ceramic substrate exceeds 0.25 c/cm2·
hr and is not higher than 50 c/cm2·
hr. - View Dependent Claims (2)
- -rays radiated from said ceramic substrate exceeds 0.25 c/cm2·
-
3. A ceramic heater, for heating a semiconductor, comprising a ceramic substrate and a heating element disposed on the surface or internally thereof,
wherein the level of α - -rays radiated from said ceramic substrate exceeds 0.25 c/cm2·
hr and is not higher than 50 c/cm2·
hr.
- -rays radiated from said ceramic substrate exceeds 0.25 c/cm2·
-
4. An electrostatic chuck comprising a ceramic substrate and electrodes embedded therein,
wherein the level of α - -rays radiated from said ceramic substrate exceeds 0.25 c/cm2·
hr and is not higher than 50 c/cm2·
hr. - View Dependent Claims (5)
- -rays radiated from said ceramic substrate exceeds 0.25 c/cm2·
-
6. A substrate for a wafer prober comprising a ceramic substrate and a conductor layer formed on the surface thereof,
wherein the level of α - -rays radiated from the surface of said ceramic substrate exceeds 0.25 c/cm2·
hr and is not higher than 50 c/cm2·
hr. - View Dependent Claims (7)
- -rays radiated from the surface of said ceramic substrate exceeds 0.25 c/cm2·
Specification
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Current AssigneeIbiden Co., Ltd.
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Original AssigneeIbiden Co., Ltd.
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InventorsIto, Yasutaka, Hiramatsu, Yasuji
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current219/444.1
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CPC Class CodesH01L 21/67103 mainly by conductionH01L 21/67109 mainly by convectionH01L 21/67115 mainly by radiationH01L 21/6833 Details of electrostatic ch...H05B 2203/013 Heaters using resistive fil...H05B 2203/017 Manufacturing methods or ap...H05B 3/143 applied to semiconductors, ...H05B 3/265 the insulating base being a...
