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Semiconductor device, and electronic apparatus

  • US 20030015703A1
  • Filed: 05/23/2002
  • Published: 01/23/2003
  • Est. Priority Date: 05/24/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first interconnection;

    a second interconnection; and

    a thin film transistor comprising a first electrode, a first insulating film in contact with the first electrode, a semiconductor film in contact with the first insulating film, a second insulating film in contact with the semiconductor film, and plural second electrodes in contact with the second insulating film, wherein the semiconductor film comprises plural channel-formed regions and plural impurity regions each in contact with corresponding one of the channel-formed regions, one of two impurity regions out of the plural impurity regions is connected to the first interconnection and the other is connected to the second interconnection, the first electrode overlaps with all the impurity regions except the above-mentioned two impurity regions and with all the channel-formed regions, the second electrodes are electrically connected to each other; and

    each of the second electrodes overlaps with each of the channel-formed regions.

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