Diode having high brightness and method thereof
First Claim
Patent Images
1. A light emitting diode comprising:
- a transparent substrate;
a buffer layer on a first surface of the transparent substrate;
an n-GaN layer on the buffer layer;
an active layer on the n-GaN layer;
a p-GaN layer on the active layer;
a p-electrode on the p-GaN layer;
an n-electrode on the n-GaN layer; and
a reflective layer on a second side of the transparent substrate.
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Abstract
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
292 Citations
83 Claims
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1. A light emitting diode comprising:
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a transparent substrate;
a buffer layer on a first surface of the transparent substrate;
an n-GaN layer on the buffer layer;
an active layer on the n-GaN layer;
a p-GaN layer on the active layer;
a p-electrode on the p-GaN layer;
an n-electrode on the n-GaN layer; and
a reflective layer on a second side of the transparent substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58)
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39. A light emitting diode comprising:
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a substrate;
an n-type layer and a p-type layer on the substrate;
an active layer between the n-type layer and the p-type layer;
a first electrode contacting the p-type layer;
a second electrode contacting the n-type layer; and
a reflective layer on the substrate.
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59. A method of making a light emitting diode having a transparent substrate and a buffer layer on a first surface of the transparent substrate comprising:
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forming an n-GaN layer on the buffer layer;
forming an active layer on the n-GaN layer;
forming a p-GaN layer on the active layer;
forming a p-electrode on the p-GaN layer;
forming an n-electrode on the n-GaN layer; and
forming a reflective layer on a second side of the transparent substrate.
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60. A method of making a light emitting diode having a substrate comprising:
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forming an n-type layer and a p-type layer on the substrate;
forming an active layer between the n-type layer and the p-type layer;
forming a first electrode contacting the p-type layer;
forming a second electrode contacting the n-type layer; and
forming a reflective layer on the substrate.
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61. A diode comprising:
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a transparent substrate;
an active layer on the transparent substrate, the active layer generating photons; and
a reflective layer on the transparent substrate to reflect the photons from the active layer. - View Dependent Claims (62, 63, 64)
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65. A method of making a diode comprising:
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forming an active layer over a transparent substrate, the active layer generating photons; and
forming a reflective layer on the transparent substrate to reflect the photons from the active layer.
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66. A method of making a light emitting diode having a transparent substrate comprising:
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forming an n-GaN layer having a first doping concentration on a first side of the transparent substrate;
forming an InGaN active layer on the n-GaN layer, the active layer having an In concentration in a first range;
forming a p-GaN layer having a second doping concentration on the InGaN active layer;
forming a p-type contact layer on the p-GaN layer;
forming an n-type contact layer on the n-GaN layer by etching the p-type contact layer, p-GaN layer and the InGaN active layer;
reducing a thickness of the transparent substrate by backside lapping at a second surface of the transparent substrate;
reducing a surface roughness of the transparent substrate; and
forming a reflective layer on a reduced surface of the transparent substrate. - View Dependent Claims (70, 71, 72, 73, 74)
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67. A method of making a light emitting diode having a substrate comprising:
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forming a first epitaxial layer on a first surface of the substrate;
forming an active layer on the epitaxial layer;
forming a second epitaxial layer on the active layer;
forming a first electrode on the second epitaxial layer; and
forming a reflective layer on a second surface of the substrate.
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68. A method of making a light emitting diode comprising:
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forming a first epitaxial layer on a first surface of a substrate, the substrate including a transparent layer and a second epitaxial layer on the transparent layer;
forming an active layer on the first epitaxial layer;
forming a third epitaxial layer on the active layer;
removing the transparent layer of the substrate; and
forming a reflective layer on a second surface of the second epitaxial layer.
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69. A diode including a substrate having first and second surfaces, the first surface having an average surface roughness (Ra) of less than 30 Å
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75. A diode including a substrate having first and second surfaces, the first surface having a first surface roughness that is achievable by mechanical polishing, and the second surface having a second surface roughness less than the first surface roughness.
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76. A diode including a substrate having first and second surfaces, the first and second surfaces having a surface roughness that is less than achievable by mechanical polishing.
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77. A diode comprising:
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a transparent substrate, the transparent substrate having first and second surfaces, the first surface having a first surface roughness that is lower than achievable by mechanical polishing;
a buffer layer on a first surface of the transparent substrate;
an n-GaN layer on the buffer layer;
an active layer on the n-GaN layer;
a p-GaN layer on the active layer;
a p-electrode on the p-GaN layer; and
an n-electrode on the n-GaN layer. - View Dependent Claims (78, 79, 80, 81, 82, 83)
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Specification
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Current AssigneeSuzhou Lekin Semiconductor Company Limited
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Original AssigneeLG Electronics, Inc. (LG Corporation)
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InventorsYoo, Myung Cheol
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/79
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CPC Class CodesH01L 25/0753 the devices being arranged ...H01L 33/0025 comprising only AIIIBV comp...H01L 33/06 within the light emitting r...H01L 33/12 with a stress relaxation st...H01L 33/22 Roughened surfaces, e.g. at...H01L 33/32 containing nitrogenH01L 33/387 with a plurality of electro...H01L 33/405 Reflective materialsH01L 33/42 Transparent materialsH01L 33/46 Reflective coating, e.g. di...H01L 33/483 ContainersH01L 33/62 Arrangements for conducting...
