Structure and method for fabricating semiconductor structures and devices utilizing photonic crystals

• US 20030016895A1
• Filed: 07/23/2001
• Published: 01/23/2003
• Est. Priority Date: 07/23/2001
• Status: Abandoned Application

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Yamamoto, Joyce, Eisenbeiser, Kurt W., Holm, Paige M.
• Application Number:
  US09/909,906
• Publication Number:
  US 20030016895A1
• Time in Patent Office: Days
• US Class Current: 385/2
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12078 Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
• CPC Class Codes: G02B 2006/12123 Diode
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout

Abstract

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Photonic crystal structures may be integrally provided with such semiconductor structures, which semiconductor structures may also include optically active devices and control circuitry.

Claims

1. A semiconductor structure comprising:

a monocrystalline silicon substrate;

an amorphous oxide material overlying the monocrystalline silicon substrate;

a monocrystalline perovskite oxide material overlying the amorphous oxide material;

a monocrystalline optical isolation layer overlying the monocrystalline perovskite oxide material;

at least one photonic crystal formed on the monocrystalline optical isolation layer; and

at least one control structure formed at least in part in the monocrystalline silicon substrate and coupled to the at least one photonic crystal structure.

2. The semiconductor structure of claim 1, wherein the at least one photonic crystal comprises:

periodically spaced columns of a first material having a controllable first refractive index.

3. The semiconductor structure of claim 2, wherein the first material is an electro-optic material, and wherein the at least one photonic crystal further comprises:

electrodes, coupled to at least one column of the periodically spaced columns and to the at least one control structure, that control the controllable first refractive index of the at least one column of the periodically spaced columns in response to at least one signal provided by the at least one control structure.

4. The semiconductor structure of claim 2, wherein the first material is any material from a group comprising:

a photo-refractive material, an electro-refractive material, and a strain-optic material.

5. The semiconductor structure of claim 2, wherein the first material comprises an active material that provides gain when an external stimulus is applied.

6. The semiconductor structure of claim 2, wherein the periodically spaced columns are separated by air.

7. The semiconductor structure of claim 2, wherein the periodically spaced columns are separated by a second set of columns of a second material having a second refractive index.

8. The semiconductor structure of claim 7, wherein the second material is an electro-optic material, and wherein the at least one photonic crystal further comprises:

second electrodes, coupled to at least one column of the second set of columns and to the at least one control structure, that control the second refractive index of the at least one column of the second set of columns in response to the at least one signal provided by the at least one control structure.

9. The semiconductor structure of claim 7, wherein the second material is any material from a group comprising:

a photo-refractive material, an electro-refractive material, and a strain-optic material.

10. The semiconductor structure of claim 7, wherein the second material comprises an active material that provides gain when an external stimulus is applied.

11. The semiconductor structure of claim 1, further comprising:

a waveguide at an input of any of the at least one photonic crystal.

12. The semiconductor structure of claim 1, further comprising:

a waveguide at an output of any of the at least one photonic crystal.

13. The semiconductor structure of claim 1, further comprising:

a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and

at least one optically active device formed using the monocrystalline compound semiconductor material and coupled to the at least one photonic crystal.

14. The semiconductor structure of claim 13, wherein the at least one optically active device is coupled to the at least one control structure.

16. The process of claim 15, wherein formation of the at least one photonic crystal comprises:

forming, on the monocrystalline optical isolation layer, periodically spaced columns of a first material having a controllable first refractive index.

17. The process of claim 16, wherein the first material is an electro-optic material, and wherein formation of the at least one photonic crystal comprises:

forming electrodes, coupled to at least one column of the periodically spaced columns and to the at least one control structure, that control the controllable first refractive index of the at least one column of the periodically spaced columns in response to at least one signal provided by the at least one control structure.

18. The process of claim 16, wherein the first material is any material from a group comprising:

a photo-refractive material, an electro-refractive material, and a strain-optic material.

19. The process of claim 16, wherein the first material comprises an active material that provides gain when an external stimulus is applied.

20. The process of claim 16, wherein formation of the periodically spaced columns further comprises separating the periodically spaced columns with air.

21. The process of claim 16, wherein formation of the periodically spaced columns further comprises separating the periodically spaced columns with a second set of columns of a second material having a second refractive index.

22. The process of claim 21, wherein the second material is an electro-optic material, further comprising:

forming second electrodes, coupled to at least one column of the second set of columns and to the at least one control structure, that control the second refractive index of the at least one column of the second set of columns in response to the at least one signal provided by the at least one control structure.

23. The process of claim 21, wherein the second material is any material from a group comprising:

a photo-refractive material, an electro-refractive material, and a strain-optic material.

24. The process of claim 21, wherein the second material comprises an active material that provides gain when an external stimulus is applied.

25. The process of claim 15, further comprising:

epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film; and

forming at least one optically active device using the monocrystalline compound semiconductor material and coupled to the at least one photonic crystal structure.

26. The process of claim 25 wherein formation of the at least one optically active device further comprises coupling the at least one optically active device to the at least one control structure.

28. The semiconductor structure of claim 27, wherein the photonic crystal structure comprises periodically spaced columns of a piezoelectric material having controllable light propagation.

29. The semiconductor structure of claim 28, wherein the photonic crystal structure further comprises:

electrodes, coupled to the periodically spaced columns and to the control structure, for controlling the controllable light propagation in response to a voltage signal supplied by the control structure.

30. The semiconductor structure of claim 28, wherein the voltage signal supplied to the electrodes changes the dimensions of, and the spacing between, the periodically spaced columns, thereby controlling wavelengths of light propagating through the photonic crystal structure.

15. A process for fabricating a semiconductor structure comprising:

providing a monocrystalline silicon substrate;

depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;

forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;

epitaxially forming a monocrystalline optical isolation layer overlying the monocrystalline perovskite oxide film;

forming at least one control structure at least in part in the monocrystalline silicon substrate; and

forming at least one photonic crystal structure on the monocrystalline optical isolation layer and coupled to the at least one control structure.

27. A semiconductor structure comprising:

a monocrystalline silicon substrate;

an amorphous oxide material overlying the monocrystalline silicon substrate;

a monocrystalline perovskite oxide material overlying the amorphous oxide material;

a monocrystalline optical isolation layer overlying the monocrystalline perovskite oxide material;

a photonic crystal structure formed on the monocrystalline optical isolation layer; and

a control structure formed at least in part in the monocrystalline silicon substrate and coupled to the photonic crystal structure.