Method and machine for replicating holographic gratings on a substrate

• US 20030017581A1
• Filed: 07/23/2002
• Published: 01/23/2003
• Est. Priority Date: 10/30/2000
• Status: Active Grant

• Current Assignee: X-Body Incorporated (Bristol-Myers Squibb Company)
• Original Assignee: Sru Biosystems Incorporated
• Inventors: Li, Peter, Borsody, Alex, Qiu, Jean
• Granted Patent: US 7,306,827 B2
• Time in Patent Office: Days
• US Class Current: 435/287.2
• CPC Class Codes: B01L 3/5085 for multiple samples, e.g. microtitration plates
• CPC Class Codes: G01N 21/253 for batch operation, i.e. multisample apparatus analytical automats G01N35/00
• CPC Class Codes: G01N 21/4788 Diffraction for sizing particles G01N15/0205
• CPC Class Codes: G01N 21/7743 the reagent-coated grating coupling light in or out of the waveguide
• CPC Class Codes: G01N 33/54373 involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
• CPC Class Codes: G02B 5/1809 with pitch less than or comparable to the wavelength

Abstract

A machine and process for a pattern, such as a submicron grating pattern onto a substrate.

Claims

1. A method for replicating a pattern, the method comprising:

advancing a substrate supply roll until a substrate roll section is produced;

applying a liquid between the substrate roll section and a tool having the pattern to form a substrate roll section with a liquid layer;

rolling a shuttle mechanism having a pressure roller such that the substrate roll section with the liquid layer is rolled between the pressure roller and the tool, wherein the shuttle mechanism advances in a direction to cover the tool with the substrate roll section with a liquid layer while the substrate supply roll remains stationary,

wherein the pattern on the tool is transferred to the liquid layer to create a pattern coated substrate;

hardening the pattern coated substrate to form a cured pattern substrate;

and detaching the cured pattern substrate from the tool by retracting the shuttle mechanism while the substrate supply roll remains stationary; and

repeating the above steps on a next substrate roll section.

2. The method of claim 1 wherein detaching the cured pattern substrate from the tool is by peeling the cured pattern substrate from the tool.

3. The method of claim 2 wherein peeling the cured pattern substrate from the tool is by unrolling the pressure roller as the shuttle mechanism retracts, wherein the cured pattern substrate is lifted by the pressure roller as the shuttle mechanism retracts.

4. The method of claim 1 wherein the pattern is a grating pattern.

5. The method of claim 4 wherein the grating pattern comprises a predetermined number of rows and a predetermined number of columns.

6. The method of claim 4 wherein the tool comprises a master wafer having a master wafer grating pattern.

7. The method of claim 6 wherein the master wafer grating pattern is substantially flat and wherein the shuttle mechanism advances and retracts substantially in a plane.

8. The method of claim 6 wherein the master wafer grating pattern is curved and wherein the shuttle mechanism advances and retracts by following the curved master wafer.

9. The method of claim 6 wherein the master wafer is a master silicon wafer.

10. The method of claim 1 wherein the liquid is selected from the group consisting of an epoxy, a polymer, a cement solvent free radiation addition polymerizable crosslinkable material and a resin.

11. The method of claim 10 wherein the crosslinkable material is an acrylate epoxy ureathane based material.

12. The method of claim 1 wherein hardening the pattern coated substrate comprises exposing the pattern coated substrate to an electron beam, ultraviolet light or heat.

13. The method of claim 1 wherein the substrate supply roll comprises a substrate material selected from the group consisting of glass, plastic, polycarbonate, polyester, polyurethane, epoxy, metal, paper, composite plastic and glass, composite plastic and metal, and composite plastic and paper.

14. The method of claim 13 wherein the substrate material comprises at least one liner.

15. The method of claim 14 comprising removing the at least one liner from the substrate material as the substrate roll is advanced.

16. The method of claim 1 comprising:

advancing the cured pattern substrate onto a take-up spool to form a cured substrate roll while the shuttle mechanism remains stationary.

17. The method of claim 1 wherein the pattern has a periodic spacing wherein the spacing is between 0.1 microns to 2.0 microns.

18. The method of claim 1, wherein the pattern is a submicron grating pattern.

19. The method of claim 1 wherein the pattern has a periodic spacing wherein the spacing is between 0.2 microns to 0.6 microns.

20. The method of claim 1 further comprising depositing a film on the cured pattern substrate.

21. The method of claim 20 wherein the film is a dielectric thin film.

22. The method of claim 21 wherein the dielectric thin film has a higher refractive index than the substrate roll section.

23. The method of claim 1, wherein the pattern is a colorimetric resonant reflectance sensor grating pattern.

25. The machine of claim 24 wherein the cured patterned substrate is detached from the tool by peeling the cured pattern substrate from the tool.

26. The machine of claim 25 wherein peeling the cured pattern substrate from the tool is by retracting the shuttle mechanism wherein the cured pattern substrate is lifted away from the tool as the pressure roller is unrolled.

27. The machine of claim 24 wherein the pattern is a grating pattern.

28. The machine of claim 27 wherein the pattern has a periodic spacing wherein the spacing is between 0.1 microns to 2.0 microns.

29. The machine of claim 27, wherein the pattern is a submicron grating pattern.

30. The machine of claim 27 wherein the pattern has a periodic spacing wherein the spacing is between 0.2 microns to 0.6 microns.

31. The machine of claim 27 wherein the grating pattern comprises a predetermined number of rows and a predetermined number of columns.

32. The machine of claim 24 wherein the tool comprises a master wafer having a master wafer grating pattern.

33. The machine of claim 32 wherein the master wafer is a master silicon wafer.

34. The machine of claim 24 wherein the liquid is selected from the group consisting of an epoxy, a polymer, and a resin.

35. The machine of claim 24 wherein the liquid is cured by exposing the liquid to heat, ultraviolet light, or an electron beam.

36. The machine of claim 24 wherein the substrate roll comprises a substrate material selected from the group consisting of glass, plastic, polycarbonate, polyester, polyurethane, epoxy, metal, paper, composite plastic and glass, composite plastic and metal, and composite plastic and paper.

37. The machine of claim 35 wherein the substrate material least one liner.

38. The machine of claim 36 wherein the at least one liner is removed from the substrate material as the substrate roll is advanced.

39. The machine of claim 24 wherein the cured pattern substrate is rolled onto a take-up spool to form a coated substrate roll while the shuttle mechanism remains stationary.

40. The machine of claim 24, wherein the pattern is a colorimetric resonant reflectance grating pattern.

24. A machine comprising:

a substrate roll on a supply spool wherein the substrate roll is advanced until a substrate roll section is produced;

a tool having a pattern for receiving the substrate roll section;

an applicator for applying a liquid between the substrate roll section and the tool to form a substrate roll section with a liquid layer;

a shuttle mechanism having a pressure roller for rolling over the substrate roll section with the liquid layer wherein the pattern is transferred from the tool to the liquid layer on the substrate roll section to form a pattern coated substrate; and

a hardener to harden the pattern coated substrate to form a cured pattern substrate,

wherein the cured pattern substrate is detached from the tool.

41. A machine comprising:

an uncoated roll of plastic on a supply spool wherein the uncoated roll of plastic is unrolled until a plastic roll section is formed;

a master silicon wafer having a grating pattern for receiving the plastic roll section from the uncoated roll of plastic;

an epoxy applicator for applying an epoxy between the plastic roll section and the master silicon wafer to form an epoxy layer on the plastic roll section;

a shuttle mechanism having a pressure roller for rolling over the epoxy layer on the plastic roll section while the supply spool remains stationary wherein the grating pattern is transferred from the master silicon wafer to the epoxy layer on the plastic roll section to form a pattern epoxy section as the pressure roller rolls over the epoxy layer on the plastic roll section and the master silicon wafer; and

an ultraviolet light to cure the pattern epoxy section to form a cured section,

wherein the cured section is peeled from the master silicon wafer by unrolling the shuttle mechanism, wherein the cured section travels with the pressure roller as the cured section is peeled from the master silicon wafer.

42. The machine of claim 41 comprising:

a take-up spool for receiving the cured section wherein the cured section is advanced and rolled into the take-up spool.