Chemical vapor deposition chamber

• US 20030019428A1
• Filed: 04/26/2002
• Published: 01/30/2003
• Est. Priority Date: 04/28/2001
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tuscano, Juan B. Jr., Yang, Michael, Xi, Ming, Chen, Ling, Ku, Vincent W., Ganguli, Seshadri, Lei, Lawrence C., Chen, Chen-An, Yuan, Xiaoxiong, Nguyen, Anh N., Chang, Anzhong
• Application Number:
  US10/134,206
• Publication Number:
  US 20030019428A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles

Abstract

A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

Claims

1. A face plate adapted to be installed above a substrate-support pedestal in a chemical vapor deposition chamber, the face plate comprising:

a substantially planar body having a top surface and a bottom surface and having passages formed therethrough from the top surface to the bottom surface, the passages adapted to allow a process gas to flow therethrough, the substantially planar body having an outer periphery; and

a flange that extends downwardly from the outer periphery of the substantially planar body to form a recess in which the bottom surface is contained.

2. The face plate of claim 1, wherein the flange is adapted to be thermally coupled to a wall of the deposition chamber.

3. The face plate of claim 1, wherein the passages form openings in the top surface and form openings in the bottom surface, the openings in the top surface having a diameter that is less than a diameter of the openings in the bottom surface.

4. The face plate of claim 3, wherein each passage includes an upper cylindrical section adjacent the top surface, a lower cylindrical section adjacent the bottom surface, and a funnel-shaped section which joins the upper cylindrical section to the lower cylindrical section.

5. The face plate of claim 4 wherein:

the upper cylindrical sections are adapted to provide the face plate with a larger thermal conductance near the upper cylindrical sections than near the lower cylindrical sections; and

the lower cylindrical sections and funnel-shaped sections are adapted to trap and not reflect heat radiated toward the bottom of the face plate by a substrate positioned on the pedestal of the chamber.

6. A face plate adapted to be installed above a substrate-support pedestal in a chemical vapor deposition chamber, the face plate comprising:

a substantially planar body having;

a top surface;

a bottom surface; and

passages formed from the top surface to the bottom surface, the passages adapted to allow a process gas to flow therethrough, the passages forming openings in the bottom surface and forming openings in the top surface, the openings in the top surface having a diameter that is less than a diameter of the openings in the bottom surface;

wherein the openings in the top surface are adapted to provide the face plate with a larger thermal conductance near the openings in the top surface than near the openings in the bottom surface; and

wherein the openings in the bottom surface are adapted to trap and not reflect heat radiated toward the bottom of the face plate by a substrate positioned on the pedestal of the chamber.

7. The face plate of claim 6, wherein each passage includes an upper cylindrical section adjacent the top surface, a lower cylindrical section adjacent the bottom surface, and a funnel-shaped section which joins the upper cylindrical section to the lower cylindrical section.

8. A face plate adapted to be installed above a substrate-support pedestal in a chemical vapor deposition chamber, the pedestal having a first diameter in a plane, the face plate comprising:

a substantially planar body having a top surface and a bottom surface and having passages formed therethrough from the top surface to the bottom surface to define a perforated region of the bottom surface, the passages adapted to allow a process gas to flow therethrough, the perforated region of the bottom surface having a second diameter in the plane that is larger than the first diameter of the pedestal.

9. The face plate of claim 8, wherein the substantially planar body has an outer periphery and further comprising a flange that extends downwardly from the outer periphery of the substantially planar body.

10. The face plate of claim 8, wherein the passages form openings in the top surface and form openings in the bottom surface, the openings in the top surface having a diameter that is less than a diameter of the openings in the bottom surface.

11. The face plate of claim 10, wherein each passage includes an upper cylindrical section adjacent the top surface, a lower cylindrical section adjacent the bottom surface, and a funnel-shaped section which joins the upper cylindrical section to the lower cylindrical section.

12. A method for use within a chemical vapor deposition chamber having a substrate-support pedestal, the method comprising:

providing a face plate having;

a top surface;

a bottom surface; and

passages formed from the top surface to the bottom surface, the passages adapted to allow a process gas to flow therethrough, the passages forming openings in the bottom surface and forming openings in the top surface, the openings in the top surface having a diameter that is less than a diameter of the openings in the bottom surface;

wherein the openings in the top surface are adapted to provide the face plate with a larger thermal conductance near the openings in the top surface than near the openings in the bottom surface; and

wherein the openings in the bottom surface are adapted to trap and not reflect heat radiated toward the bottom of the face plate by a substrate positioned on the pedestal of the chamber;

positioning the face plate near the pedestal;

positioning a substrate on the pedestal;

flowing a process gas through the face plate; and

depositing a film on the substrate with the process gas.

13. A processing chamber adapted to perform a deposition process on a substrate, comprising:

an enclosure;

a pedestal positioned in the enclosure and adapted to hold a substrate during deposition;

a face plate positioned to deliver a process gas to a substrate positioned on the pedestal, the face plate comprising;

a top surface;

a bottom surface; and

passages formed from the top surface to the bottom surface, the passages adapted to allow a process gas to flow therethrough, the passages forming openings in the bottom surface and forming openings in the top surface, the openings in the top surface having a diameter that is less than a diameter of the openings in the bottom surface;

wherein the openings in the top surface are adapted to provide the face plate with a larger thermal conductance near the openings in the top surface than near the openings in the bottom surface; and

wherein the openings in the bottom surface are adapted to trap and not reflect heat radiated toward the bottom of the face plate by the substrate positioned on the pedestal of the chamber;

a dispersion plate positioned to deliver the process gas to the face plate and having a center axis, a top surface and a bottom surface and a plurality of passages extending radially from the center axis at respective inclined angles from the top surface to the bottom surface; and

a mixing fixture positioned to deliver the process gas to a central portion of the dispersion plate and having;

a body;

a mixing chamber formed in the body and adapted to receive a flow of the process gas;

an outer chamber formed in the body and surrounding the mixing chamber;

a first inlet through which a diluent gas flows to the outer chamber; and

at least one passage adapted to allow the diluent gas to flow from the outer chamber to the mixing chamber so as to dilute the process gas.

14. An apparatus adapted to mix a process gas with a diluent gas, comprising:

a body;

a mixing chamber formed in the body and adapted to receive a flow of the process gas;

an outer chamber formed in the body and surrounding the mixing chamber;

a first inlet through which the diluent gas flows to the outer chamber; and

at least one passage adapted to allow the diluent gas to flow from the outer chamber to the mixing chamber.

15. The apparatus of claim 14, wherein the body has a central axis and the mixing chamber is formed in the body at the central axis.

16. The apparatus of claim 14, wherein the mixing chamber is substantially cylindrical and the outer chamber is annular, and the mixing chamber and the outer chamber are concentric.

17. The apparatus of claim 16, wherein the at least one passage includes a plurality of passages connecting the outer chamber to the mixing chamber.

18. The apparatus of claim 17, wherein the passages are substantially evenly distributed along the circumference of the mixing chamber.

19. The apparatus of claim 18, wherein the passages are twelve in number.

20. The apparatus of claim 18, wherein each of the passages has a diameter of substantially 0.02 inch.

21. The apparatus of claim 14, wherein a gas pressure in the outer chamber is at a first level and a gas pressure in the mixing chamber is at a second level that is substantially less than the first level.

22. The apparatus of claim 21, wherein the first level is in the range of 600-700 mTorr and the second level is in the range of 100-200 mTorr.

23. The apparatus of claim 14, wherein the first inlet is a tube that has a main axis which does not intersect a central axis of the body.

24. The apparatus of claim 14, wherein the mixing chamber is substantially cylindrical and has a chamferred lower edge.

25. The apparatus of claim 14, further comprising a second inlet positioned to conduct the diluent gas or a third gas to the outer chamber.

26. The apparatus of claim 25, wherein the first and second inlets are tubes that have respective main axes which do not intersect a central axis of the body.

27. An Apparatus adapted to mix a process gas with a diluent gas, comprising:

a body having a central axis;

a mixing chamber formed in the body at the central axis and adapted to receive a flow of the process gas;

an outer chamber formed in the body and surrounding the mixing chamber, the outer chamber being in fluid communication with the mixing chamber; and

an inlet through which the diluent gas flows to the outer chamber.

28. The apparatus of claim 27, wherein the outer chamber is in fluid communication with the mixing chamber by means of a plurality of passages radiating outwardly from the mixing chamber to the outer chamber.

29. The apparatus of claim 28 wherein the passages are sized so as to provide substantial resistance to flow of the diluent gas from the outer chamber to the mixing chamber.

30. An apparatus adapted to mix a process gas with a diluent gas, comprising:

a first chamber adapted to receive the process gas at a first pressure;

a second chamber adjacent the first chamber and adapted to receive the diluent gas and to hold the diluent gas at a second pressure that is higher than the first pressure; and

at least one passage adapted to allow the diluent gas to flow from the second chamber to the first chamber, the at least one passage providing substantial resistance to flow of the diluent gas from the second chamber to the first chamber.

31. The apparatus of claim 30, wherein a difference between the first pressure and the second pressure is in the range of 400-600 mTorr.

32. The apparatus of claim 30, wherein the second chamber surrounds the first chamber and the at least one passage includes a plurality of passages radiating outwardly from the first chamber.

33. A method of mixing a process gas and a diluent gas, comprising:

flowing the process gas to a mixing chamber of a mixing fixture;

flowing the diluent gas to an outer chamber that surrounds the mixing chamber; and

allowing the diluent gas to enter the mixing chamber from the outer chamber.