Dry etching apparatus for manufacturing semiconductor devices
First Claim
1. A dry etching apparatus comprising:
- a chamber into which a plasma gas for use in etching a film coated on a semiconductor substrate is provided in a plasma state;
a chucking apparatus disposed in the chamber for supporting the semiconductor substrate, the chucking apparatus being upwardly elevated to a predetermined position to perform the dry etching process and moved downwardly to load and unload the semiconductor substrate; and
a baffle plate for discharging from the chamber a reaction byproduct generated in the dry etching process and a non-reacted gas, the baffle plate having a flat ring shape and slits through which the reaction byproducts and the non-reacted gas are exhausted, the baffle plate being fixed to an inner surface of the chamber so that a terminal end of the baffle plate faces a peripheral surface of the chucking apparatus at the predetermined position.
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Accused Products
Abstract
Disclosed is a dry etching apparatus for etching a film coated on a semiconductor substrate. An electrostatic chuck on which the semiconductor substrate is disposed is provided in a chamber carrying out an etching process. The electrostatic chuck is elevated to perform the etching process and moved downwardly to load and unload the semiconductor substrate. When the chuck is elevated, a peripheral surface of the chuck faces an inner edge of a baffle plate mounted on the inner surface of the chamber. A reaction byproduct created for the etching process and a non-reacted gas are discharged through slits formed in the baffle plate from the chamber. Accordingly, as the baffle plate is not moved along with the chuck, the reaction byproduct attached to the baffle plate cannot be exfoliated.
27 Citations
13 Claims
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1. A dry etching apparatus comprising:
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a chamber into which a plasma gas for use in etching a film coated on a semiconductor substrate is provided in a plasma state;
a chucking apparatus disposed in the chamber for supporting the semiconductor substrate, the chucking apparatus being upwardly elevated to a predetermined position to perform the dry etching process and moved downwardly to load and unload the semiconductor substrate; and
a baffle plate for discharging from the chamber a reaction byproduct generated in the dry etching process and a non-reacted gas, the baffle plate having a flat ring shape and slits through which the reaction byproducts and the non-reacted gas are exhausted, the baffle plate being fixed to an inner surface of the chamber so that a terminal end of the baffle plate faces a peripheral surface of the chucking apparatus at the predetermined position. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification