Thermal management systems and methods
First Claim
1. A composite semiconductor structure with thermal management, comprising:
- a non-compound semiconductor region;
an accommodating layer;
a compound semiconductor region that is integrated with the non-compound semiconductor region through the accommodating layer; and
a heat pump device comprising;
a portion of the compound semiconductor region through which electricity is conducted to move heat through the Peltier effect; and
an interconnect that has a lower thermal resistivity than that of the compound semiconductor region and that is adapted to carry heat approximately between the portion and an area of thermal interest in the composite semiconductor structure that is electrically insulated from the interconnect.
1 Assignment
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Accused Products
Abstract
A thermal management system or method may include features for pumping heat in a composite semiconductor structure. A heat pump such as a peltier device may be formed from compound semiconductor materials in a composite semiconductor structure. The heat pump may be thermally connected to an area of thermal interest such as a circuit device that generates heat during operation. The heat pump may also be connected to a non-compound semiconductor region of the composite semiconductor structure, which may be die bonded to a heat sink. Electricity may be conducted through the heat pump to move heat in a desired direction between the area of thermal interest and the non-compound semiconductor region. Plural heat pumps may be formed for cooling or heating an area of thermal interest in the composite semiconductor structure. If desired, control circuitry and a temperature sensor may be formed and used to regulate the temperature in the area of the thermal interest.
18 Citations
38 Claims
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1. A composite semiconductor structure with thermal management, comprising:
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a non-compound semiconductor region;
an accommodating layer;
a compound semiconductor region that is integrated with the non-compound semiconductor region through the accommodating layer; and
a heat pump device comprising;
a portion of the compound semiconductor region through which electricity is conducted to move heat through the Peltier effect; and
an interconnect that has a lower thermal resistivity than that of the compound semiconductor region and that is adapted to carry heat approximately between the portion and an area of thermal interest in the composite semiconductor structure that is electrically insulated from the interconnect. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of thermal management, comprising:
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forming a composite semiconductor structure that comprises a non-compound semiconductor region, an accommodating layer, and a compound semiconductor region that is integrated with the non-compound semiconductor region through the accommodating layer, the composite semiconductor structure comprising a heat pump device that is formed at least partly from a portion of the compound semiconductor region;
thermally connecting the portion with an area of thermal interest through an interconnect that has a lower thermal resistivity than that of the compound semiconductor region and is electrically insulated from the area of thermal interest; and
conducting electricity through the portion to move heat between the heat pump and the area of thermal interest. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A semiconductor structure comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material that includes a portion through which electricity is conducted to move heat;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and
an interconnect that has a lower thermal resistivity than that of the compound semiconductor material, that thermally connects the portion and the area of thermal interest, and that is electrically insulated from the area of thermal interest. - View Dependent Claims (32, 33, 34)
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35. A process for fabricating a semiconductor structure comprising:
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providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film, the monocrystalline compound semiconductor layer including a portion through which electricity is conducted to move heat;
thermally connecting the portion and the area of thermal interest through an interconnect that has a lower thermal resistivity than that of the compound semiconductor material and is electrically insulted from the area of interest. - View Dependent Claims (36, 37, 38)
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Specification