Device and method for detecting a reliability of integrated semiconductor components at high temperatures
First Claim
1. In combination with an integrated semiconductor component having a parasitic functional element, a device for detecting a reliability of the integrated semiconductor component, the device comprising:
- a carrier substrate for receiving the integrated semiconductor component;
a heating element for heating the semiconductor component; and
a temperature sensor for detecting a temperature of the semiconductor component;
said temperature sensor including at least a portion of said parasitic functional element of the semiconductor component.
1 Assignment
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Accused Products
Abstract
The invention relates to a device and a method for detecting the reliability of integrated semiconductor components. The device includes a carrier substrate for receiving an integrated semiconductor component that will be examined, a heating element, and a temperature sensor. The temperature sensor has at least a portion of a parasitic functional element of the semiconductor component. As a result, reliability tests can be carried out in a particularly accurate and space-saving manner.
31 Citations
16 Claims
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1. In combination with an integrated semiconductor component having a parasitic functional element, a device for detecting a reliability of the integrated semiconductor component, the device comprising:
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a carrier substrate for receiving the integrated semiconductor component;
a heating element for heating the semiconductor component; and
a temperature sensor for detecting a temperature of the semiconductor component;
said temperature sensor including at least a portion of said parasitic functional element of the semiconductor component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for detecting a reliability of an integrated semiconductor component, which comprises:
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using a temperature sensor including at least a portion of a parasitic functional element of the semiconductor component to perform a measurement mode for measuring a temperature that is caused by a heating element and that is actually present at the semiconductor component;
performing a stress mode for stressing the semiconductor component at least in a manner dependent on a temperature of the heating element; and
evaluating a failure instant of the semiconductor component at least in a manner dependent on the temperature that is caused by the heating element. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification