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Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum

  • US 20030020167A1
  • Filed: 09/24/2002
  • Published: 01/30/2003
  • Est. Priority Date: 01/14/2000
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a metal interconnect comprised of tungsten as a main constituent material and containing molybdenum formed on one principal side of the semiconductor substrate;

    a capacitor component comprising a first electrode and a second electrode;

    formed on said one principal side of the semiconductor substrate wherein a high dielectric constant film or a ferroelectric film is formed between the first electrode and the second electrode;

    a plug electrically connected with the metal interconnect and the semiconductor device; and

    an electroconductive film formed between the metal interconnect and the plug.

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