Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum

• US 20030020167A1
• Filed: 09/24/2002
• Published: 01/30/2003
• Est. Priority Date: 01/14/2000
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hideo Miura, Hiroyuki Ohta, Masashi Sahara, Shinji Nishihara, Takashi Nakajima, Tomio Iwasaki
• Inventors: Ohta, Hiroyuki, Nakajima, Takashi, Nishihara, Shinji, Iwasaki, Tomio, Miura, Hideo, Sahara, Masashi
• Granted Patent: US 6,548,904 B2
• Time in Patent Office: Days
• US Class Current: 257/758
• CPC Class Codes: H01L 23/53257 the principal metal being a refractory metal
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 12/09 with simultaneous manufacture of the peripheral circuit region and memory cells
• CPC Class Codes: H10B 12/315 with the capacitor higher than a bit line

Abstract

In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a metal interconnect comprised of tungsten as a main constituent material and containing molybdenum formed on one principal side of the semiconductor substrate;

a capacitor component comprising a first electrode and a second electrode;

formed on said one principal side of the semiconductor substrate wherein a high dielectric constant film or a ferroelectric film is formed between the first electrode and the second electrode;

a plug electrically connected with the metal interconnect and the semiconductor device; and

an electroconductive film formed between the metal interconnect and the plug.

2. A semiconductor device according to claim 1, wherein the electroconductive film contains tungsten nitride or titanium nitride.

3. A semiconductor device according to claim 1, wherein the metal interconnect is a bit line.

4. A semiconductor device according to claim 1, wherein the plug contains polycrystalline silicon as a main constituting element.

5. A semiconductor device according to claim 1, wherein the metal interconnect has a wiring width of 0.2 pm or less.

6. A semiconductor device according to claim 1, wherein the metal interconnect contains molybdenum in an amount of 0.05 at. % to 18 at. %.

7. A semiconductor device according to claim 1, wherein the high dielectric constant film or the ferroelectric film is an oxide film made of a material selected from the group consisting of tantalum oxide, barium strontium titanate and lead titanate zirconate.

8. A semiconductor device according to claim 1, wherein a memory LSI and a logic LSI are mounted on the semiconductor substrate.