Liquid crystal display storage device and method of fabricating the same

• US 20030020860A1
• Filed: 07/30/2002
• Published: 01/30/2003
• Est. Priority Date: 07/30/2001
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Hong, Hyung-Ki
• Granted Patent: US 7,349,036 B2
• Time in Patent Office: Days
• US Class Current: 349/139
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode

Abstract

A liquid crystal display storage device includes a lower electrode extending along a first direction, the lower electrode includes first and second opposing edges, an insulating layer on the lower electrode, and an upper electrode on the insulating layer, wherein a first area of the upper electrode that overlaps the first and second edges of the lower electrode is less than a second area of the upper electrode that extends past the first and second edges of the lower electrode.

Claims

1. A liquid crystal display storage device, comprising:

a lower electrode extending along a first direction, the lower electrode includes first and second opposing edges;

an insulating layer on the lower electrode; and

an upper electrode on the insulating layer,

wherein a first area of the upper electrode that overlaps the first and second edges of the lower electrode is less than a second area of the upper electrode that extends past the first and second edges of the lower electrode.

2. The device according to claim 1, wherein the lower electrode includes a gate line of a thin film transistor.

3. The device according to claim 1, wherein the insulating layer includes a gate insulating layer of a thin film transistor.

4. The device according to claim 1, further including a passivation layer on the upper electrode.

5. The device according to claim 4, wherein the upper electrode is connected to a pixel electrode via a storage contact hole formed in the passivation layer.

6. The device according to claim 1, wherein the upper electrode includes a central portion that exposes a portion of the insulating layer.

7. The device according to claim 1, wherein the upper electrode includes a central portion that covers the insulating layer.

8. The device according to claim 7, wherein the upper electrode is “

I”

shaped.

9. A liquid crystal display storage device, comprising:

a lower electrode on a substrate extending along a horizontal direction, the lower electrode including first and second opposing edges with a central portion therebetween;

an insulating layer on the lower electrode; and

an upper electrode on the insulating layer and overlapping the lower electrode,

wherein a first area of overlap between the upper electrode and the first and second edges of the lower electrode is greater than a second area of overlap between the upper electrode and the lower electrode at the central portion of the lower electrode.

10. The device according to claim 9, wherein the lower electrode includes a gate line of a thin film transistor.

11. The device according to claim 9, wherein the insulating layer includes a gate insulating layer of a thin film transistor.

12. The device according to claim 9, further includes a passivation layer on the upper electrode.

13. The device according to claim 12, further includes a pixel electrode contacting the upper electrode and a drain electrode of a thin film transistor.

14. The device according to claim 9, further includes a pixel electrode contacting the upper electrode and a drain electrode of a thin film transistor.

15. A method of fabricating a liquid crystal display storage device, comprising steps of:

forming a lower electrode extending along a first direction, the lower electrode includes first and second opposing edges;

forming an insulating layer on the lower electrode; and

forming an upper electrode on the insulating layer,

wherein a first area of the upper electrode that overlaps the first and second edges of the lower electrode is less than a second area of the upper electrode that extends past the first and second edges of the lower electrode.

16. The method according to claim 15, wherein the step of forming a lower electrode simultaneously includes forming a gate line and a gate electrode of a thin film transistor.

17. The method according to claim 15, wherein the step of forming an insulating layer simultaneously includes forming a gate insulating layer of a thin film transistor.

18. The method according to claim 15, wherein the step of forming an upper electrode simultaneously includes forming source and drain electrodes of a thin film transistor.

19. The method according to claim 15, further includes a step of forming a pixel electrode to contact the upper electrode and a drain electrode of a thin film transistor.

20. A method of fabricating a liquid crystal display storage device, comprising steps of:

forming a lower electrode on a substrate extending along a horizontal direction, the lower electrode including first and second opposing edges with a central portion therebetween;

forming an insulating layer on the lower electrode; and

forming an upper electrode on the insulating layer and overlapping the lower electrode,

wherein a first area of overlap between the upper electrode and the first and second edges of the lower electrode is greater than a second area of overlap between the upper electrode and the lower electrode at the central portion of the lower electrode.

21. The method according to claim 20, wherein the step of forming a lower electrode simultaneously includes forming a gate line and a gate electrode of a thin film transistor.

22. The method according to claim 20, wherein the step of forming an insulating layer simultaneously includes forming a gate insulating layer of a thin film transistor.

23. The method according to claim 20, wherein the step of forming an upper electrode simultaneously includes forming source and drain electrodes of a thin film transistor.

24. The method according to claim 20, further includes a step of forming a passivation layer on the upper electrode.

25. The method according to claim 20, further includes a step of simultaneously forming a pixel electrode to contact the upper electrode and to contact a drain electrode of a thin film transistor.