Vertical cavity surface emitting laser having improved light output function

• US 20030021317A1
• Filed: 07/25/2001
• Published: 01/30/2003
• Est. Priority Date: 07/25/2001
• Status: Active Grant

• Current Assignee: LuxNet Corporation
• Original Assignee: LuxNet Corporation
• Inventors: Kuo, Hao-Chung, Hasnain, Ghulam, Kuo, Chihping, Shi, Zhiqing, Liao, Andrew Shuh-Huei, Trieu, Minh Ngoc
• Granted Patent: US 6,553,053 B2
• Time in Patent Office: Days
• US Class Current: 372/46
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment

Abstract

A laser diode that includes a light guiding structure that improves the light-output-versus-current curve by altering the multiple spatial modes of the laser diode. A laser diode according to the present invention includes a bottom mirror constructed on an electrically conducting material, an active region constructed from a first conductive spacer situated above the bottom mirror, a light emitting layer, and a second conductive spacer situated above the light emitting layer. The laser diode also includes a top mirror constructed from a plurality of mirror layers of a semiconducting material of a first conductivity type that are located above the second conductive spacer. The adjacent mirror layers have different indexes of refraction. One or more of the top mirror layers is altered to provide an aperture defining layer that includes an aperture region that alters the spatial modes of the device.

Claims

1. A laser diode comprising:

a bottom mirror comprising an electrically conducting material;

a first conductive spacer situated above said bottom mirror;

a light emitting layer;

a second conductive spacer situated above said light emitting material;

a top mirror comprising a plurality of mirror layers of a semiconducting material of a first conductivity type above said second conductive spacer in which adjacent layers have different indexes of refraction, and

an aperture defining layer comprising an aperture region and an implant region, said aperture region comprising an aperture semiconducting material of said first conductivity type, said implant region surrounding said aperture region and comprising an implant material that alters the reflectivity of said mirror layers in said implant region.

2. The laser diode of claim 1 wherein said implant region is electrically conducting.

3. The laser diode of claim 2 wherein said aperture defining layer is located within a distance equal to 20 mirror layers of said light emitting layer.

4. The laser diode of claim 1 wherein said implant material comprises an element chosen from the group consisting of Cr, Ti, and Fe.

5. A method for fabricating a light-emitting device, said method comprising the steps of:

depositing a first semiconducting layer of a first conductivity type;

depositing a light-emitting layer on said first semiconducting layer;

depositing a second semiconducting layer of a second conductivity type on said light-emitting layer;

depositing an aperture defining layer on said second semiconducting layer, said aperture defining layer comprising a semiconducting material of said second conductivity type;

defining an aperture region in said aperture defining layer;

implanting an area around said aperture region with impurities to create a region having a reflectivity that is different from that in said aperture region, said aperture region remaining free of said impurities; and

depositing a third semiconducting layer of said second conductivity type on said second semiconducting layer after said implanting step.

6. The method of claim 5 wherein said impurities comprise an element chosen from the group consisting of Cr, Ti, and Fe.

7. The method of claim 5 wherein said first semiconducting layer comprises a plurality of sub-layers forming a DBR mirror.

8. The method of claim 5 wherein said aperture defining layer comprises a plurality of sub-layers forming a portion of a DRB mirror, said third layer semiconducting layer comprising another portion of said DBR mirror.