METHOD AND APPARATUS FOR SWITCHING AN OPTICAL BEAM USNG AN OPTICAL RIB WAVEGUIDEMETHOD AND APPARATUS FOR SWITCHING AN OPTICAL BEAM USING AN OPTICAL RIB WAVEGUIDE

• US 20030021568A1
• Filed: 12/20/2000
• Published: 01/30/2003
• Est. Priority Date: 12/20/2000
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Morse, Michael T., Samara-Rubio, Dean A.
• Granted Patent: US 6,600,864 B2
• Time in Patent Office: Days
• US Class Current: 385/132
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence

Abstract

An optical switch including an optical rib waveguide. In one embodiment, the disclosed optical switch a first optical confinement layer disposed between first and second semiconductor substrate layers. A second optical confinement layer is disposed proximate to the first semiconductor substrate layer. The first semiconductor substrate layer is disposed between the first and second optical confinement layers. First and second lateral optical confinement regions are disposed proximate to the first optical confinement layer. A rib region is included in the first semiconductor substrate layer. The rib region is disposed proximate to the first optical confinement layer and between the first and second lateral optical confinement regions. A slab region is included in the first semiconductor substrate layer and is disposed proximate to the second optical confinement layer. The slab region is disposed between the second optical confinement layer and the rib region and the first and second lateral optical confinement regions.

Claims

1. An apparatus, comprising:

a first optical confinement layer disposed between first and second semiconductor substrate layers;

a second optical confinement layer disposed proximate to the first semiconductor substrate layer, the first semiconductor substrate layer disposed between the first and second optical confinement layers;

first and second lateral optical confinement regions disposed proximate to the first optical confinement layer;

a rib region included in the first semiconductor substrate layer disposed proximate to the first optical confinement layer and between the first and second lateral optical confinement regions; and

a slab region included in the first semiconductor substrate layer disposed proximate to the second optical confinement layer, the slab region disposed between the second optical confinement layer and the rib region and the first and second lateral optical confinement regions.

2. The apparatus of claim 1 further comprising an optical path through the first semiconductor substrate layer, the optical path including portions of the rib region and the slab region.

3. The apparatus of claim 2 further comprising:

a plurality of first polarity regions disposed in the first semiconductor substrate layer, the plurality of first polarity regions including the optical path; and

a plurality of second polarity regions disposed in the first semiconductor substrate layer, the plurality of second polarity regions including the optical path; and

an insulating region disposed between the plurality of first polarity regions and the plurality of second polarity regions.

4. The apparatus of claim 3 further comprising a first polarity region signal line conductor coupled to the plurality of first polarity regions through the second optical confinement layer.

5. The apparatus of claim 3 further comprising a second polarity region signal line conductor coupled to the plurality o second polarity regions through the second optical confinement layer.

6. The apparatus of claim 1 wherein the first and second semiconductor substrate layers, the first and second optical confinement layers and the first and second lateral optical confinement regions are included in a silicon-on-insulator (SOI) wafer.

7. The apparatus of claim 1 wherein the first and second semiconductor substrate layers comprise silicon.

8. The apparatus of claim 1 wherein the rib region and the slab region are included in an optical rib waveguide included in the first semiconductor substrate.

9. A method, comprising:

directing an optical beam through an optical rib waveguide disposed in a first semiconductor substrate layer;

confining the optical beam to remain in the optical rib waveguide with a first optical confinement layer disposed proximate to the first semiconductor substrate layer, the first optical confinement layer disposed between the first semiconductor substrate layer and a second semiconductor substrate layer;

confining the optical beam to remain in the optical rib waveguide with first and second first and second lateral optical confinement regions disposed proximate to the first optical confinement layer, a rib region of the optical rib waveguide disposed between the first and second lateral optical confinement regions; and

confining the optical beam to remain in the optical rib waveguide with a second optical confinement layer disposed proximate to the first semiconductor substrate layer, the first semiconductor substrate layer disposed between the first and second optical confinement layers, a slab region of the optical rib waveguide disposed between second optical confinement layer and the first and second lateral confinement regions and the rib region.

10. The method of claim 9 further comprising coupling a plurality of first polarity regions in the optical rib waveguide to a first polarity region signal line conductor through the second optical confinement layer.

11. The method of claim 9 further comprising coupling a plurality of second polarity regions in the optical rib waveguide to an second polarity region signal line conductor through the second optical confinement layer.

12. The method of claim 9 further comprising:

directing the optical beam into a first end of the optical rib waveguide; and

directing the optical beam from a second end of the optical rib waveguide.

13. An optical rib waveguide, comprising:

a rib region included in a first semiconductor substrate layer, the rib region disposed proximate to a first optical confinement layer and disposed between first and second lateral optical confinement regions, the first optical confinement layer disposed between the first semiconductor substrate layer and a second semiconductor substrate layer; and

a slab region included in the first semiconductor substrate layer, the slab region disposed between a second optical confinement layer and the rib region and the first and second lateral optical confinement regions.

14. The optical rib waveguide of claim 13 further comprising a plurality of first polarity regions included in the first semiconductor substrate, the plurality of first polarity regions coupled to a first polarity region signal line conductor through the second optical confinement layer.

15. The optical rib waveguide of claim 14 further comprising a plurality of second polarity regions included in the first semiconductor substrate proximate to the plurality of first polarity regions, the plurality of second polarity regions coupled to an second polarity region signal line conductor through the second optical confinement layer.

16. The optical rib waveguide of claim 15 further comprising an insulating region disposed between the plurality of first polarity regions and the plurality of second polarity regions.

17. The optical rib waveguide of claim 13 further comprising a plurality of trench capacitors disposed in the first semiconductor substrate layer, the plurality of trench capacitors coupled to receive a modulation signal through the second optical confinement layer.