Structure and method for fabricating an integrated phased array circuit
First Claim
1. A monolithic device comprising:
- a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and
a first phased array component formed in at least one of the monocrystalline silicon substrate, the amorphous oxide material, the monocrystalline perovskite oxide material and the monocrystalline compound semiconductor material.
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Abstract
Phased array components utilizing two or more different types of semiconductor in one monolithic device are provided. High quality epitaxil layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxil growth of single crystal silicon onto single crystal oxidematerials. A monolithic phased array system (604) is formed including digitizer (626) formed on compound semiconductor material (614) as well as processors (620, 628, 632) formed on silicon (616). The processors may be networked (622) to form a distributed computing system (604) creating a complete wafer-scale system (600) that includes signal processing and application functions.
59 Citations
72 Claims
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1. A monolithic device comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and
a first phased array component formed in at least one of the monocrystalline silicon substrate, the amorphous oxide material, the monocrystalline perovskite oxide material and the monocrystalline compound semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17)
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15. The structure of claim I wherein the first phased array component comprises a receive path operable to be connected with an antenna and a distribution network.
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18. The structure of claim I wherein the first phased array component comprises one phased array cell operatively connected with an antenna and a distribution network and further comprising a plurality of additional phased array cells operatively connected with a respective plurality of additional antennae and the distribution network, the plurality of additional phased array cells formed in at least one of the monocrystalline silicon substrate and the monocrystalline compound semiconductor material.
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19. A process for fabricating a monolithic device comprising:
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(a) providing a monocrystalline silicon substrate;
(b) depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness that would result in strain-induced defects;
(c) forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
(d) epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film; and
(e) forming a first phased array component in one of the monocrystalline silicon substrate, the amorphous oxide material, the monocrystalline perovskite oxide material and the monocrystalline compound semiconductor material. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A monolithic device comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
a set of phased array element cells formed in the monocrystalline compound semiconductor material; and
a digital beamformer carried by the monocrystalline silicon substrate and coupled with the set of phased array element cells. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46)
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47. A monolithic device comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
a set of phased array element cells formed in the monocrystalline compound semiconductor material, each element cell comprising a respective element processor; and
a supervisory processor carried by the monocrystalline silicon substrate and coupled with the element processors. - View Dependent Claims (48, 49, 50, 51, 52, 53, 54)
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55. A process for fabricating a monolithic device comprising:
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(a) providing a monocrystalline silicon substrate;
(b) depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness that would result in strain-induced defects;
(c) forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
(d) epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film;
(e) forming a set of phased array element cells in the monocrystalline compound semiconductor material; and
(f) forming a digital beamformer carried by the monocrystalline silicon substrate and coupled with the set of phased array element cells. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62, 63, 64)
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65. A process for fabricating a monolithic device comprising:
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(a) providing a monocrystalline silicon substrate;
(b) depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness that would result in strain-induced defects;
(c) forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
(d) epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film;
(e) forming a set of phased array element cells in the monocrystalline compound semiconductor material, each element cell comprising a respective element processor; and
(f) forming a supervisory processor carried by the monocrystalline silicon substrate and coupled with the element processors. - View Dependent Claims (66, 67, 68, 69, 70, 71, 72)
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Specification