Structure and method for fabricating anopto-electronic device having an electrochromic switch
First Claim
1. A semiconductor structure comprising:
- a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
an optical source component formed within the monocrystalline compound semiconductor material and adapted to transmit radiant energy; and
an electrochromic switch optically coupled to the optical source component.
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Accused Products
Abstract
A opto-electronic semiconductor structure having an electrochromic switch includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is adapted to transmit radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical source component. An optical detector component that is adapted to receive radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical detector component.
16 Citations
44 Claims
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1. A semiconductor structure comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
an optical source component formed within the monocrystalline compound semiconductor material and adapted to transmit radiant energy; and
an electrochromic switch optically coupled to the optical source component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process for fabricating a semiconductor structure comprising:
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providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film;
forming an optical source component adapted to transmit radiant energy within the monocrystalline compound semiconductor layer; and
forming an electrochromic switch optically coupled to the optical source component. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor structure comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
an optical detector component formed within the monocrystalline compound semiconductor material and operable to detect a radiant energy transmission; and
an electrochromic switch optically coupled to the optical detector component. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A process for fabricating a semiconductor structure comprising:
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providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film;
forming an optical detector component operable to detect a radiant energy transmission within the monocrystalline compound semiconductor layer; and
forming an electrochromic switch optically coupled to the optical detector component. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
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Specification