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Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same

  • US 20030022430A1
  • Filed: 07/24/2001
  • Published: 01/30/2003
  • Est. Priority Date: 07/24/2001
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a monocrystalline silicon substrate;

    an amorphous oxide material overlying the monocrystalline silicon substrate;

    a monocrystalline perovskite oxide material overlying the amorphous oxide material;

    a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and

    a composite transistor comprising a first transistor having first active regions formed at least in part in a silicon portion of the semiconductor structure, a second transistor having second active regions formed at least in part in a monocrystalline compound semiconductor portion of the semiconductor structure, and a mode control terminal for controlling the first transistor and the second transistor.

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