Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
First Claim
1. A semiconductor structure comprising:
- a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and
a composite transistor comprising a first transistor having first active regions formed at least in part in a silicon portion of the semiconductor structure, a second transistor having second active regions formed at least in part in a monocrystalline compound semiconductor portion of the semiconductor structure, and a mode control terminal for controlling the first transistor and the second transistor.
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Abstract
A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.
107 Citations
48 Claims
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1. A semiconductor structure comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and
a composite transistor comprising a first transistor having first active regions formed at least in part in a silicon portion of the semiconductor structure, a second transistor having second active regions formed at least in part in a monocrystalline compound semiconductor portion of the semiconductor structure, and a mode control terminal for controlling the first transistor and the second transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor structure comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
a silicon transistor formed at least in part in the monocrystalline silicon substrate;
a compound transistor formed at least in part in the monocrystalline compound semiconductor material;
a switch to selectively couple the silicon transistor and the compound transistor in response to a control signal; and
a control circuit configured to provide the control signal. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor structure comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
one or more silicon transistors formed at least in part in the monocrystalline silicon substrate;
one or more compound transistors formed at least in part in the monocrystalline compound semiconductor material; and
switches associated with respective transistors of the one or more silicon transistors and the one or more compound transistors, the switches receiving control signals for selectively coupling the respective transistors to one of the signal input circuit and the signal output circuit. - View Dependent Claims (23, 24, 25)
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26. A configurable transistor device comprising:
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one or more silicon transistors;
one or more compound semiconductor transistors formed in a monolithic semiconductor device with the one or more silicon transistors; and
switching means for selectively combining the one or more silicon transistors and the one or more compound transistors to tailor electrical parameters of the configurable transistor device. - View Dependent Claims (27, 28, 29)
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30. A composite transistor comprising:
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a silicon transistor formed at least in part in a silicon portion of an integrated circuit; and
a compound semiconductor transistor formed at least in part in a compound semiconductor portion of the integrated circuit, the compound semiconductor transistor and the silicon transistor having at least one electrically common terminal. - View Dependent Claims (31, 32, 33, 34)
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35. A configurable mixer and amplifier comprising:
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a silicon transistor;
a compound semiconductor transistor formed in a common semiconductor structure with the silicon transistor; and
a switching device including a switch which selectively couples a source/drain region of the silicon transistor and one of a source/drain region of the compound semiconductor transistor in an amplifier mode and ground potential in a mixer mode, and a switch which selectively couples the source/drain region of the compound semiconductor transistor and an output in the mixer mode.
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37. A semiconductor structure comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material; and
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
at least one configurable transistor formed at least in part in the monocrystalline compound semiconductor material; and
a control circuit electrically coupled with the transistor and formed at least in part in a silicon portion of the semiconductor structure. - View Dependent Claims (38, 39)
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40. A process for fabricating a semiconductor structure comprising:
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providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film;
forming a configurable transistor at least in part in the monocrystalline compound semiconductor material. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48)
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Specification