Barrier formation using novel sputter-deposition method
First Claim
1. A system for processing a substrate, comprising:
- a load lock chamber;
an intermediate substrate transfer region comprising a first substrate transfer chamber and a second substrate transfer chamber, wherein the first substrate transfer chamber is operated at a first pressure and the second transfer chamber is operated at a second pressure less than the first pressure and the first transfer chamber is coupled to the load lock chamber and the second substrate transfer chamber is coupled to the first substrate transfer chamber;
at least one physical vapor deposition (PVD) processing chamber coupled to the first substrate transfer chamber;
at least one chemical vapor deposition (CVD) processing chamber coupled to the second substrate transfer chamber; and
at least one annealing chamber coupled to the second substrate transfer chamber.
2 Assignments
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Accused Products
Abstract
Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.
222 Citations
56 Claims
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1. A system for processing a substrate, comprising:
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a load lock chamber;
an intermediate substrate transfer region comprising a first substrate transfer chamber and a second substrate transfer chamber, wherein the first substrate transfer chamber is operated at a first pressure and the second transfer chamber is operated at a second pressure less than the first pressure and the first transfer chamber is coupled to the load lock chamber and the second substrate transfer chamber is coupled to the first substrate transfer chamber;
at least one physical vapor deposition (PVD) processing chamber coupled to the first substrate transfer chamber;
at least one chemical vapor deposition (CVD) processing chamber coupled to the second substrate transfer chamber; and
at least one annealing chamber coupled to the second substrate transfer chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of processing a substrate, comprising:
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positioning a substrate having a silicon material disposed thereon with patterned feature definitions formed therein in a substrate processing system;
depositing a first metal layer on the substrate surface in a first processing chamber disposed on the processing system by a physical vapor deposition technique, a chemical vapor deposition technique, or an atomic layer deposition technique;
forming a metal silicide layer by reacting the silicon material and the first metal layer; and
depositing a second metal layer in situ on the substrate in a second processing chamber disposed on the processing system by a chemical vapor deposition technique. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method of processing a substrate, comprising:
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positioning a substrate having feature definitions formed in a silicon-containing material in a substrate processing system;
depositing a metal layer on the silicon-containing material in the feature definitions, wherein the metal layer comprises cobalt, nickel, or combinations thereof; and
depositing a tungsten layer on the metal layer by a chemical vapor deposition technique at a temperature sufficient to form a metal silicide layer at an interface of the silicon-containing material and the metal layer. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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34. A method of processing a substrate, comprising:
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positioning a substrate having feature definitions formed in a silicon-containing material in a substrate processing system;
depositing a metal layer on the silicon-containing material in the feature definitions in a physical vapor deposition chamber;
annealing the substrate in the physical vapor deposition chamber to form a metal silicide layer at an interface of the silicon-containing material and the metal layer;
annealing the substrate to substantially convert the metal layer to metal silicide; and
depositing a tungsten layer on the metal layer in a chemical vapor deposition chamber. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42)
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43. A method of processing a substrate, comprising:
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positioning a substrate having a silicon material disposed thereon with patterned feature definitions formed therein in a first processing chamber;
exposing the substrate to a plasma cleaning process in a first processing chamber;
depositing a cobalt layer on the substrate surface and in the feature definitions by a physical vapor deposition technique in a second processing chamber;
annealing the substrate at a first temperature in the second processing chamber to partially form a cobalt silicide layer;
annealing the substrate at a second temperature greater than the first temperature in a third processing chamber to substantially form the cobalt silicide layer; and
depositing a tungsten layer on the cobalt silicide layer by a chemical vapor deposition technique in a fourth processing chamber, wherein the first, second, third, and fourth processing chamber are disposed on one vacuum processing system. - View Dependent Claims (44, 45, 46, 47, 48, 49)
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50. A method of processing a substrate, comprising:
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positioning a substrate having feature definitions formed in a silicon-containing material in a substrate processing system;
depositing a metal layer on the silicon-containing material in the feature definitions, wherein the metal layer comprises cobalt, nickel, or combinations thereof;
annealing the substrate at a first temperature to form a metal silicide layer;
depositing a tungsten layer on the metal layer by a chemical vapor deposition technique; and
annealing the substrate at a second temperature greater than the first temperature. - View Dependent Claims (51, 52, 53, 54, 55, 56)
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Specification