Processes for making a barrier between a dielectric and a conductor and products produced therefrom
First Claim
1. A method of making a barrier on a high k dielectric material, said method comprising the steps of:
- providing a substrate having an upper surface comprising a high k dielectric material;
remotely generating a plasma using a nitrogen containing source; and
flowing the plasma over the upper surface comprising a high k dielectric material to form an oxynitride layer on the upper surface.
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Accused Products
Abstract
The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta2O5, a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700° C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.
420 Citations
39 Claims
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1. A method of making a barrier on a high k dielectric material, said method comprising the steps of:
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providing a substrate having an upper surface comprising a high k dielectric material;
remotely generating a plasma using a nitrogen containing source; and
flowing the plasma over the upper surface comprising a high k dielectric material to form an oxynitride layer on the upper surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of making a barrier on a high k dielectric material, said method comprising the steps of:
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providing a substrate having an upper surface comprising a high k dielectric material;
depositing a layer of TiN on said upper surface by chemical vapor deposition;
remotely generating a plasma using an oxygen containing source; and
flowing the plasma over the TiN layer to form an oxynitride layer on the upper surface. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A stack capacitor device comprising:
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a high k dielectric layer;
a barrier layer overlying said high k dielectric layer, said barrier layer having been formed, at least in part by a remote plasma process; and
a top electrode overlying said barrier layer. - View Dependent Claims (24, 25, 26, 27)
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28. A method of making a high k dielectric from a top portion of a metallic layer, said method comprising the steps of:
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providing a layer of metal nitride having an upper surface;
remotely generating a plasma using an oxygen containing source; and
flowing the plasma over the upper surface of the metal nitride layer and diffusing oxygen into the layer to form a metal oxynitride on the upper surface. - View Dependent Claims (29, 30, 31, 32)
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33. A method of making a high capacitance density, MIM capacitor, comprising the steps of:
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depositing a bottom electrode of tantalum nitride by physical vapor deposition;
remotely generating a plasma using an oxygen containing source;
flowing the plasma over the upper surface of the tantalum nitride layer and diffusing oxygen into the layer to form a tantalum oxynitride on the upper surface; and
depositing a top electrode over the tantalum oxynitride. - View Dependent Claims (34, 35)
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36. A MIM capacitor structure comprising:
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a bottom electrode formed of tantalum nitride;
a tantalum oxynitride layer having been formed in said bottom electrode by remote plasma oxidation; and
a top electrode. - View Dependent Claims (37, 38, 39)
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Specification