Electrostatic chuck

• US 20030026060A1
• Filed: 04/09/2002
• Published: 02/06/2003
• Est. Priority Date: 05/10/2000
• Status: Active Grant

• Current Assignee: Ibiden Co., Ltd.
• Original Assignee: Ibiden Co., Ltd.
• Inventors: Ito, Yasutaka, Hiramatsu, Yasuji
• Granted Patent: US 6,731,496 B2
• Time in Patent Office: Days
• US Class Current: 361/311
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H05B 3/143 applied to semiconductors, e.g. wafers heating H05B3/0047 takes precedence
• CPC Class Codes: H05B 3/265 the insulating base being an inorganic material, e.g. ceramic H05B3/262 takes precedence

Abstract

One object of the present invention is to provide an electrostatic chuck which allows sufficiently rapid temperature rising/dropping thereof, in case that the diameter of a ceramic substrate is 190 mm or more or especially in case that the diameter of the ceramic substrate is quite large, exceeding 300 mm. The present invention discloses an electrostatic chuck comprising: a ceramic substrate equipped with a temperature controlling means; an electrostatic electrode formed on the ceramic substrate; and a ceramic dielectric film provided on the electrostatic electrode, wherein: the ceramic substrate has a diameter exceeding 190 mm and a thickness of 20 mm or less; and the ceramic dielectric film contains oxygen in an amount of 0.1 to 20 weight %.

Claims

1. An electrostatic chuck comprising:

a ceramic substrate equipped with a temperature controlling means;

an electrostatic electrode formed on said ceramic substrate; and

a ceramic dielectric film provided on said electrostatic electrode,

wherein;

said ceramic substrate has a diameter exceeding 190 mm and a thickness of 20 mm or less; and

said ceramic dielectric film contains oxygen in an amount of 0.1 to 20 weight %.

2. The electrostatic chuck according to claim 1,

wherein a resistance heating element is used as said temperature controlling means.

6. The electrostatic chuck according to any of claims 1 to 5,

wherein the thickness of said ceramic dielectric film is in a range of 50 to 5000 μ

m.

3. An electrostatic chuck comprising:

a ceramic substrate equipped with a temperature controlling means;

an electrostatic electrode formed on said ceramic substrate; and

a ceramic dielectric film provided on said electrostatic electrode,

wherein said ceramic substrate has a diameter exceeding 300 mm and a thickness of 20 mm or less.

4. The electrostatic chuck according to claim 3,

wherein said ceramic dielectric film contains oxygen in an amount of 0.1 to 20 weight %.

5. The electrostatic chuck according to claim 3 or 4,

wherein a resistance heating element is used as said temperature controlling means.