Monolithic tunable wavelength multiplexers and demultiplexers and methods for fabricating same

• US 20030026515A1
• Filed: 08/01/2001
• Published: 02/06/2003
• Est. Priority Date: 08/01/2001
• Status: Abandoned Application

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Yamamoto, Joyce, Barenburg, Barbara Foley
• Application Number:
  US09/918,802
• Publication Number:
  US 20030026515A1
• Time in Patent Office: Days
• US Class Current: 385/14
• CPC Class Codes: G02B 2006/12047 Barium titanate (BaTiO3)
• CPC Class Codes: G02B 2006/12078 Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
• CPC Class Codes: G02B 2006/1208 Rare earths
• CPC Class Codes: G02B 2006/12164 Multiplexing; Demultiplexing
• CPC Class Codes: G02B 2006/12178 Epitaxial growth
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/12007 forming wavelength selective elements, e.g. multiplexer, demultiplexer
• CPC Class Codes: G02B 6/2938 for multiplexing or demultiplexing, i.e. combining or separating wavelengths, e.g. 1xN, NxM
• CPC Class Codes: G02B 6/29395 configurable, e.g. tunable or reconfigurable switching G02B6/35
• CPC Class Codes: G02B 6/4215 the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers G02B6/4246 takes precedence
• CPC Class Codes: H01S 5/4012 Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

The present invention provides a wavelength-tunable optical device structure which monolithically integrates both active and passive device components on a single substrate. Monolithically-integrated active and passive optical device components may be fabricated by growing high-quality active optical devices, such as optical emitters and optical detectors, on a single substrate and using electro-optical crystalline oxide materials to tune optical devices, such as directional couplers, to transmit radiation having selected wavelengths. In this manner, cost-effective, monolithically-integrated, tunable wavelength multiplexers and/or demultiplexers may be formed.

Claims

1. A monolithically-integrated multiplexer system comprising:

a monocrystalline substrate;

a monocrystalline accommodating buffer layer overlying said substrate;

a radiation emitter system overlying said accommodating buffer layer, wherein said radiation emitter system is configured to emit radiation having a plurality of wavelengths;

a main waveguide overlying said accommodating buffer layer and positioned adjacent to said radiation emitter system, wherein said main waveguide is configured to receive and transmit radiation emitted from said radiation emitter system; and

a radiation receiver in alignment with said main waveguide, wherein said radiation receiver is configured to receive radiation emitted from said main waveguide.

2. The multiplexer system of claim 1, wherein said monocrystalline substrate comprises material selected from the group consisting of silicon, germanium, silicon carbide, indium phosphide, silicon germanium, gallium arsenide, and indium arsenide.

3. The multiplexer system of claim 1, wherein said monocrystalline substrate comprises silicon.

4. The multiplexer system of claim 1, wherein said accommodating buffer layer comprises an oxide material selected from the group consisting of alkaline-earth metal titanates, alkaline-earth metal zirconates, alkaline-earth metal hafnates, alkaline-earth metal tantalates, alkaline-earth metal ruthenates, alkaline-earth metal niobates, and metal oxides.

5. The multiplexer system of claim 1, wherein said accommodating buffer layer comprises a monocrystalline perovskite oxide material layer.

6. The multiplexer system of claim 1, wherein said accommodating buffer layer comprises a material selected from the group consisting of BaTiO₃, SrTiO₃, and Sr_xBa₁₋

xTiO₃ (where the value of x ranges from 0 to

     1).

7. The multiplexer system of claim 1, further comprising an amorphous interface layer overlying said monocrystalline substrate and underlying said accommodating buffer layer.

8. The multiplexer system of claim 7, wherein said amorphous interface layer comprises silicon oxide.

9. The multiplexer system of claim 1 further comprising a template layer overlying said accommodating buffer layer and underlying said radiation receiver, said radiation emitter system, and said main waveguide.

10. The multiplexer system of claim 9, wherein said template layer comprises one of a semiconductor material and a compound semiconductor material.

11. The multiplexer system of claim 10, wherein said template layer comprises a material selected from the group consisting of Group III-V compounds, mixed Group III-V compounds, Group II-VI compounds, and mixed Group II-VI compounds.

12. The multiplexer system of claim 11, wherein said template layer comprises a material selected from the group consisting of Ti—

As, SrOAs, SrGaO, and SrAlO.

13. The multiplexer system of claim 1, wherein said radiation emitter system comprises:

an optical emitter monolithically formed overlying said accommodating buffer layer and configured to emit radiation having a plurality of wavelengths; and

an electro-optical waveguide positioned adjacent to said optical emitter and configured to receive radiation emitted from said optical emitter and to transmit said radiation to said main waveguide.

14. The multiplexer system of claim 13, wherein said optical emitter comprises at least one of a laser, a light emitting diode, a fiber optic cable, and a waveguide.

15. The multiplexer system of claim 13, wherein said optical emitter comprises a monocrystalline active layer positioned between a first cladding layer and a second cladding layer.

16. The multiplexer system of claim 15, wherein said active layer comprises one of a semiconductor material and a compound semiconductor material.

17. The multiplexer system of claim 16, wherein said active layer comprises a compound semiconductor selected from the group consisting of GaAs, InP, AlGaAs, InGaAs, InGaAsP, InAlAsP, and InAlGaAs.

18. The multiplexer system of claim 15, wherein said first cladding layer and said second cladding layer comprise material independently selected from the group consisting of GaAs, GaSb, InGaAs, GaAlAs, AlGaSb, InP, InGaAsP, and InAlGaAs.

19. The multiplexer system of claim 13, wherein said waveguide comprises a directional coupler.

20. The multiplexer system of claim 13, wherein said waveguide comprises a core of electro-optically active material, either organic or inorganic, whose index of refraction is controllable by a modulating voltage.

21. The multiplexer system of claim 20, wherein said core is lattice-matched to one of said accommodating buffer layer and an underlying electrode layer.

22. The multiplexer system of claim 21, wherein said waveguide comprises a core material layer having a first refractive index and an underlying electrode layer having a second refractive index which is less than said first refractive index.

23. The multiplexer system of claim 20, wherein said waveguide comprises a core material layer having a first refractive index and a cladding material layer having a second refractive index which is less than said first refractive index.

24. The multiplexer system of claim 23, wherein said waveguide comprises material selected from the group consisting of BaTiO₃, Sr_xBa₁₋

xTiO₃ (where the value of x ranges from 0 to

     1), LiNbO₃, LiTaO₃, Pb(Zr, Ti)O₃, ZnO₃, and Pb(La, Zr, Ti)O₃.

25. The multiplexer system of claim 24, wherein said core material layer comprises a dopant selected from the group consisting of titanium and protons.

26. The multiplexer system of claim 13, wherein said waveguide comprises a base layer positioned over said accommodating buffer layer, and wherein said base layer has a ridge formed therein.

27. The multiplexer system of claim 26, further comprising a cladding material layer positioned over said ridge and said base layer, wherein said cladding material layer has a first index of refraction and said base layer has a second index of refraction, and wherein said first index of refraction is less than said second index of refraction.

28. The multiplexer system of claim 1, wherein said main waveguide comprises a core of alkaline-earth metal oxide doped to have a first refractive index and a cladding layer of alkaline-earth metal oxide having a second refractive index which is less than said first refractive index.

29. The multiplexer system of claim 28, wherein said main waveguide comprises material selected from the group consisting of BaTiO₃, Sr_xBa₁₋

xTiO₃ (where the value of x ranges from 0 to

     1), LiNbO₃, LiTaO₃, Pb(Zr, Ti)O₃, ZnO₃, and Pb(La, Zr, Ti)O₃.

30. The multiplexer system of claim 29, wherein said main waveguide comprises a core material layer having a first refractive index and a cladding material layer having a second refractive index which is less than said first refractive index.

31. The multiplexer system of claim 30, wherein said core material layer comprises a dopant selected from the group consisting of titanium and protons.

32. The multiplexer system of claim 1, wherein said main waveguide comprises a base layer positioned over said accommodating buffer layer, and wherein said base layer has a ridge formed therein.

33. The multiplexer system of claim 32, further comprising a cladding material layer positioned over said ridge and said base layer, wherein said cladding material layer has a first index of refraction and said base layer has a second index of refraction, and wherein said first index of refraction is less than said second index of refraction.

34. The multiplexer system of claim 1, wherein said radiation receiver is one of a fiber optic cable, a photodetector, a waveguide, and a diode.

35. The multiplexer system of claim 1, wherein said radiation receiver comprises a monocrystalline active layer overlying a monocrystalline material layer.

36. The multiplexer system of claim 35, wherein said active layer and said monocrystalline material layer each comprises one of a semiconductor material and a compound semiconductor material.

37. The multiplexer system of claim 36, wherein said active layer comprises a compound semiconductor selected from the group consisting of GaAs, InP, AlGaAs, InGaAs, InGaAsP, InAlAsP, and InAlGaAs.

38. The multiplexer system of claim 36, wherein said monocrystalline material layer comprises material selected from the group consisting of GaAs, GaSb, InGaAs, GaAlAs, AlGaSb, InP, InGaAsP, and InAlGaAs.

39. The multiplexer system of claim 13, further comprising control circuitry formed at least partially in said substrate and coupled to said optical emitter and said main waveguide.

40. A monolithically-integrated demultiplexer system comprising:

a monocrystalline substrate;

a monocrystalline accommodating buffer layer overlying said substrate;

a radiation detector system overlying said accommodating buffer layer;

a main waveguide overlying said accommodating buffer layer and positioned adjacent to said radiation detector system, wherein said main waveguide is configured to receive and transmit radiation to said radiation detector system; and

a radiation source in alignment with said main waveguide, wherein said radiation source is configured to emit radiation having a plurality of wavelengths.

41. The demultiplexer system of claim 40, wherein said monocrystalline substrate comprises material selected from the group consisting of silicon, germanium, silicon carbide, indium phosphide, silicon germanium, gallium arsenide, and indium arsenide.

42. The demultiplexer system of claim 40, wherein said monocrystalline substrate comprises silicon.

43. The demultiplexer system of claim 40, wherein said accommodating buffer layer comprises an oxide material selected from the group consisting of alkaline-earth metal titanates, alkaline-earth metal zirconates, alkaline-earth metal hafnates, alkaline-earth metal tantalates, alkaline-earth metal ruthenates, alkaline-earth metal niobates, and metal oxides.

44. The demultiplexer system of claim 40, wherein said accommodating buffer layer comprises a monocrystalline perovskite oxide material layer.

45. The demultiplexer system of claim 40, wherein said accommodating buffer layer comprises a material selected from the group consisting of BaTiO₃, SrTiO₃, and Sr_xBa₁₋

xTiO₃ (where the value of x ranges from 0 to

     1).

46. The demultiplexer system of claim 40, further comprising an amorphous interface layer overlying said monocrystalline substrate and underlying said accommodating buffer layer.

47. The demultiplexer system of claim 46, wherein said amorphous interface layer comprises silicon oxide.

48. The demultiplexer system of claim 40, further comprising a template layer overlying said accommodating buffer layer and underlying said radiation receiver, said radiation emitter system, and said main waveguide.

49. The demultiplexer system of claim 48, wherein said template layer comprises one of a semiconductor material and a compound semiconductor material.

50. The demultiplexer system of claim 49, wherein said template layer comprises a material selected from the group consisting of Group III-V compounds, mixed Group III-V compounds, Group II-VI compounds, and mixed Group II-VI compounds.

51. The demultiplexer system of claim 50, wherein said template layer comprises a material selected from the group consisting of Ti—

As, SrOAs, SrGaO, and SrAlO.

52. The demultiplexer system of claim 40, wherein said radiation detector system comprises:

an electro-optical waveguide monolithically formed overlying said accommodating buffer layer and configured to receive and transmit radiation emitted from said main waveguide; and

an optical detector monolithically formed overlying said accommodating buffer layer and positioned adjacent to said waveguide, wherein said optical detector is configured to receive radiation from said waveguide.

53. The demultiplexer system of claim 52, wherein said waveguide comprises a directional coupler.

54. The demultiplexer system of claim 52, wherein said waveguide comprises a core of electro-optically active material, either organic or inorganic, whose index of refraction is controllable by a modulating voltage.

55. The demultiplexer system of claim 54, wherein said core is lattice-matched to one of said accommodating buffer layer and an underlying electrode layer.

56. The demultiplexer system of claim 55, wherein said waveguide comprises a core material layer having a first refractive index and an underlying electrode layer having a second refractive index which is less than said first refractive index.

57. The demultiplexer system of claim 54, wherein said waveguide comprises a core material layer having a first refractive index and a cladding material layer having a second refractive index which is less than said first refractive index.

58. The demultiplexer system of claim 57, wherein said waveguide comprises material selected from the group consisting of BaTiO₃, Sr_xBa₁₋

xTiO₃ (where the value of x ranges from 0 to

     1), LiNbO₃, LiTaO₃, Pb(Zr, Ti)O₃, ZnO₃, and Pb(La, Zr, Ti)O₃.

59. The demultiplexer system of claim 58, wherein said core material layer comprises a dopant selected from the group consisting of titanium and protons.

60. The demultiplexer system of claim 52, wherein said waveguide comprises a base layer positioned over said accommodating buffer layer, and wherein said base layer has a ridge formed therein.

61. The demultiplexer system of claim 60, further comprising a cladding material layer positioned over said ridge and said base layer, wherein said cladding material layer has a first index of refraction and said base layer has a second index of refraction, and wherein said first index of refraction is less than said second index of refraction.

62. The demultiplexer system of claim 52, wherein said optical detector is one of a fiber optic cable coupled to a detector and a waveguide coupled to a photodetector, a waveguide.

63. The demultiplexer system of claim 52, wherein said optical detector comprises a monocrystalline active layer overlying a monocrystalline material layer.

64. The demultiplexer system of claim 63, wherein said active layer and said monocrystalline material layer each comprises one of a semiconductor material and a compound semiconductor material.

65. The demultiplexer system of claim 64, wherein said active layer comprises a compound semiconductor selected from the group consisting of GaAs, InP, AlGaAs, InGaAs, InGaAsP, InAlAsP, and InAlGaAs.

66. The demultiplexer system of claim 64, wherein said monocrystalline material layer comprises material selected from the group consisting of GaAs, GaSb, InGaAs, GaAlAs, AlGaSb, InP, InGaAsP, and InAlGaAs.

67. The demultiplexer system of claim 40, wherein said main waveguide comprises a core of alkaline-earth metal oxide doped to have a first refractive index and a cladding layer of alkaline-earth metal oxide having a second refractive index which is less than said first refractive index.

68. The demultiplexer system of claim 67, wherein said main waveguide comprises material selected from the group consisting of BaTiO₃, Sr_xBa₁₋

xTiO₃ (where the value of x ranges from 0 to

     1), LiNbO₃, LiTaO₃, Pb(Zr, Ti)O₃, ZnO₃, and Pb(La, Zr, Ti)O₃.

69. The demultiplexer system of claim 68, wherein said main waveguide comprises a core material layer having a first refractive index and a cladding material layer having a second refractive index which is less than said first refractive index.

70. The demultiplexer system of claim 69, wherein said core material layer comprises a dopant selected from the group consisting of titanium and protons.

71. The demultiplexer system of claim 40, wherein said main waveguide comprises a base layer positioned over said accommodating buffer layer, wherein said base layer has a ridge formed therein.

72. The demultiplexer system of claim 71, further comprising a cladding material layer positioned over said ridge and said base layer, wherein said cladding material layer has a first index of refraction and said base layer has a second index of refraction, and wherein said first index of refraction is less than said second index of refraction.

73. The demultiplexer system of claim 40, wherein said radiation source comprises at least one of a laser, a light emitting diode, a fiber optic cable coupled to an optical source, and a waveguide coupled to the optical source.

74. The demultiplexer system of claim 40, wherein said radiation source comprises a monocrystalline active layer positioned between a first cladding layer and a second cladding layer.

75. The demultiplexer system of claim 74, wherein said active layer comprises one of a semiconductor material and a compound semiconductor material.

76. The demultiplexer system of claim 75, wherein said active layer comprises a compound semiconductor selected from the group consisting of GaAs, InP, AlGaAs, InGaAs, InGaAsP, InAlAsP, and InAlGaAs.

77. The demultiplexer system of claim 74, wherein said first cladding layer and said second cladding layer comprise material independently selected from the group consisting of GaAs, GaSb, InGaAs, GaAlAs, AlGaSb, InP, InGaAsP, and InAlGaAs.

78. The demultiplexer system of claim 52, wherein said radiation detector system further comprises an electro-optical waveguide grating section in alignment with said waveguide and positioned between said waveguide and said optical detector.

79. The demultiplexer system of claim 78, wherein said waveguide grating section comprises a core layer positioned between a first cladding layer and a second cladding layer, and wherein said core layer comprises an optical grating formed within said core layer.

80. The demultiplexer system of claim 52, further comprising control circuitry formed in said substrate and coupled to said optical detector and electro-optical waveguide.

81. The demultiplexer system of claim 80, further configured to control an output from said main waveguide using a feedback control loop which includes a feedback path from said optical detector to said electro-optical waveguide.

82. The demultiplexer system of claim 52, further comprising at least one tap waveguide in alignment with an optical detector and adjacent to said waveguide.

83. The demultiplexer system of claim 82, wherein said waveguide and said at least one tap waveguide are configured to separate radiation transmitted by said waveguide into a plurality of radiation streams, wherein each radiation stream is characterized by substantially a single wavelength.

84. The demultiplexer system of claim 40 comprising a plurality of radiation detector systems, wherein each radiation detector system is configured to separate radiation transmitted by said main waveguide into a plurality of radiation streams.

85. The demultiplexer system of claim 84, wherein each radiation detector system further comprises:

an electro-optical waveguide monolithically formed overlying said accommodating buffer layer and configured to receive and transmit radiation emitted from said main waveguide;

a plurality of tap waveguides monolithically formed overlying said accommodating buffer layer and configured to receive and transmit radiation emitted from said waveguide;

an optical detector monolithically formed overlying said accommodating buffer layer and positioned adjacent to said tap waveguide, wherein said optical detector is configured to receive radiation from said tap waveguide;

an optical device monolithically formed overlying said accommodating buffer layer and positioned adjacent to said waveguide, wherein said optical device is configured to receive radiation from said waveguide; and

wherein said waveguide and said plurality of tap waveguides are configured to separate radiation transmitted by said waveguide into a plurality of radiation streams, each radiation stream being characterized by substantially a single wavelength.

86. A process for fabricating a multiplexer system, the process comprising the steps of:

providing a monocrystalline substrate;

epitaxially growing an accommodating buffer layer over at least one of said substrate and an amorphous interface layer;

epitaxially growing a template layer over said accommodating buffer layer;

forming a radiation emitter system overlying said template layer;

forming a main waveguide overlying at least one of said accommodating buffer layer and said template layer; and

forming a radiation receiver overlying said template layer.

87. The process of claim 86, wherein growing an accommodating buffer layer comprises epitaxially growing an oxide material selected from the group consisting of alkaline-earth metal titanates, alkaline-earth metal zirconates, alkaline-earth metal hafnates, alkaline-earth metal tantalates, alkaline-earth metal ruthenates, alkaline-earth metal niobates, and metal oxides.

88. The process of claim 86, wherein growing an accommodating buffer layer comprises epitaxially growing a layer of material selected from the group consisting of BaTiO₃, SrTiO₃, and Sr_xBa₁₋

xTiO₃ (where the value of x ranges from 0 to

     1).

89. The process of claim 86, wherein growing a template layer comprises epitaxially growing a layer on one or a semiconductor material and a compound semiconductor material.

90. The process of claim 89, wherein growing a template layer comprises epitaxially growing a layer of material selected from the group consisting of Group III-V compounds, mixed Group III-V compounds, Group II-VI compounds, and mixed Group II-VI compounds.

91. The process of claim 86, wherein forming a radiation emitter system further comprises:

forming an optical emitter overlying said template layer; and

forming an electro-optical waveguide overlying said template layer.

92. The process of claim 91, wherein forming an optical emitter further comprises:

epitaxially growing a first cladding layer overlying said template layer;

epitaxially growing a monocrystalline active layer over said first cladding layer; and

epitaxially growing a second cladding layer over said monocrystalline active layer.

93. The process of claim 92, further comprising epitaxially growing an electrode layer overlying said second cladding layer.

94. The process of claim 91, wherein forming an electro-optical waveguide further comprises:

epitaxially growing a first cladding layer overlying said accommodating buffer layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer; and

epitaxially growing a second cladding layer over said monocrystalline core material layer.

95. The process of claim 94, further comprising:

epitaxially growing a first electrode layer underlying said first cladding layer; and

forming a second electrode layer overlying said second cladding layer.

96. The process of claim 91, wherein forming an electro-optical waveguide further comprises:

epitaxially growing a cladding material layer overlying said accommodating buffer layer; and

ion implanting a dopant in said cladding material layer.

97. The process of claim 96, further comprising:

epitaxially growing a first electrode layer underlying said cladding material layer; and

forming a second electrode layer overlying said cladding material layer.

98. The process of claim 91, wherein forming an electro-optical waveguide further comprises:

epitaxially growing a first cladding layer overlying said accommodating buffer layer;

selectively etching a surface of said first cladding material layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer; and

epitaxially growing a second cladding layer overlying said core material layer.

99. The process of claim 98, further comprising:

epitaxially growing a first electrode layer underlying said first cladding layer; and

forming a second electrode layer overlying said second cladding layer.

100. The process of claim 91, wherein forming an electro-optical waveguide further comprises:

epitaxially growing a base layer overlying said accommodating buffer layer; and

selectively etching a surface of said base layer to form a spatial variation in a thickness of said base layer and thereby form a ridge above said base layer.

101. The process of claim 100, further comprising:

epitaxially growing a first electrode layer underlying said base layer; and

forming a second electrode layer overlying said ridge of said base layer.

102. The process of claim 100, further comprising:

epitaxially growing an electrode layer over said base layer and adjacent to said ridge.

103. The process of claim 100, further comprising epitaxially depositing a cladding material layer over said ridge and said base layer.

104. The process of claim 86, wherein forming a main waveguide further comprises:

epitaxially growing a first cladding layer overlying at least one of said accommodating buffer layer and said template layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer; and

epitaxially growing a second cladding layer over said monocrystalline core material layer.

105. The process of claim 104, further comprising:

epitaxially growing a first electrode layer underlying said first cladding layer; and

forming a second electrode layer overlying said second cladding layer.

106. The process of claim 86, wherein forming a main waveguide further comprises:

epitaxially growing a base layer overlying said accommodating buffer layer; and

selectively etching a surface of said base layer to form a spatial variation in a thickness of said base layer and thereby form a ridge above said base layer.

107. The process of claim 106, further comprising:

epitaxially growing a first electrode layer underlying said base layer; and

forming a second electrode layer overlying said ridge of said base layer.

108. The process of claim 106, further comprising:

epitaxially growing an electrode layer over said base layer and adjacent to said ridge.

109. The process of claim 106, further comprising epitaxially depositing a cladding material layer over said ridge and said base layer.

110. The process of claim 86, wherein forming a radiation receiver further comprises:

epitaxially growing a monocrystalline semiconductor or compound semiconductor material layer over said template layer; and

epitaxially growing an active layer over said monocrystalline semiconductor or compound semiconductor material layer.

111. The process of claim 98, further comprising forming an electrode layer overlying said active layer.

112. The process of claim 86, further comprising forming at least one control circuit at least partially in said monocrystalline substrate.

113. A process for fabricating a demultiplexer system, the process comprising the steps of:

providing a monocrystalline substrate;

epitaxially growing an accommodating buffer layer over at least one of said substrate and an amorphous interface layer;

epitaxially growing a template layer over said accommodating buffer layer;

forming a radiation detector system overlying said template layer;

forming a main waveguide overlying said accommodating buffer layer; and

forming a structure for coupling a radiation source with the main waveguide.

114. The process of claim 113, wherein growing an accommodating buffer layer comprises epitaxially growing an oxide material selected from the group consisting of alkaline-earth metal titanates, alkaline-earth metal zirconates, alkaline-earth metal hafnates, alkaline-earth metal tantalates, alkaline-earth metal ruthenates, alkaline-earth metal niobates, and metal oxides.

115. The process of claim 113, wherein growing an accommodating buffer layer comprises epitaxially growing a layer of material selected from the group consisting of BaTiO₃, SrTiO₃, and Sr_xBa₁₋

xTiO₃ (where the value of x ranges from 0 to

     1).

116. The process of claim 113, wherein growing a template layer comprises epitaxially growing a layer of one of a semiconductor material and a compound semiconductor material.

117. The process of claim 116, wherein growing a template layer comprises epitaxially growing a layer of material selected from the group consisting of Group III-V compounds, mixed Group III-V compounds, Group II-VI compounds, and mixed Group II-VI compounds.

118. The process of claim 113, wherein forming a radiation detector system further comprises:

forming an optical detector overlying said template layer; and

forming an electro-optical waveguide overlying said template layer.

119. The process of claim 118, wherein forming an optical detector further comprises:

epitaxially growing a monocrystalline semiconductor or compound semiconductor material layer over said template layer; and

epitaxially growing an active layer over said monocrystalline semiconductor or compound semiconductor material layer.

120. The process of claim 119, further comprising forming an electrode layer overlying said active layer.

121. The process of claim 118, wherein forming an electro-optical waveguide further comprises:

epitaxially growing a first cladding layer overlying said accommodating buffer layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer; and

epitaxially growing a second cladding layer over said monocrystalline core material layer.

122. The process of claim 121, further comprising:

epitaxially growing a first electrode layer underlying said first cladding layer; and

forming a second electrode layer overlying said second cladding layer.

123. The process of claim 118, wherein forming an electro-optical waveguide further comprises:

epitaxially growing a cladding material layer overlying said accommodating buffer layer; and

ion implanting a dopant in said cladding material layer.

124. The process of claim 123, further comprising:

epitaxially growing a first electrode layer underlying said cladding material layer; and

forming a second electrode layer overlying said cladding material layer.

125. The process of claim 118, wherein forming an electro-optical waveguide further comprises:

epitaxially growing a first cladding layer overlying said accommodating buffer layer;

selectively etching a surface of said first cladding material layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer; and

epitaxially growing a second cladding layer overlying said core material layer.

126. The process of claim 125, further comprising:

epitaxially growing a first electrode layer underlying said first cladding layer; and

forming a second electrode layer overlying said second cladding layer.

127. The process of claim 118, wherein forming an electro-optical waveguide further comprises:

epitaxially growing a base layer overlying said accommodating buffer layer; and

selectively etching a surface of said base layer to form a spatial variation in a thickness of said base layer and thereby form a ridge above said base layer.

128. The process of claim 127, further comprising:

epitaxially growing a first electrode layer underlying said base layer; and

forming a second electrode layer overlying said ridge of said base layer.

129. The process of claim 127, further comprising:

forming an electrode layer over said base layer and adjacent to said ridge.

130. The process of claim 127, further comprising epitaxially depositing a cladding material layer over said ridge and said base layer.

131. The process of claim 118, further comprising forming an electro-optical waveguide grating section overlying said accommodating buffer layer.

132. The process of claim 131, wherein forming an electro-optical waveguide grating section further comprises:

epitaxially growing a first cladding layer overlying said accommodating buffer layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer;

patterning said monocrystalline material layer to form an optical grating within said monocrystalline core material layer; and

epitaxially growing a second cladding layer over said monocrystalline core material layer.

133. The process of claim 113, wherein forming a main waveguide further comprises:

epitaxially growing a first cladding layer overlying at least one of said accommodating buffer layer and said template layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer; and

epitaxially growing a second cladding layer over said monocrystalline core material layer.

134. The process of claim 133, further comprising:

epitaxially growing a first electrode layer underlying said first cladding layer; and

forming a second electrode layer overlying said second cladding layer.

135. The process of claim 113, wherein forming a main waveguide further comprises:

epitaxially growing a base layer overlying said accommodating buffer layer; and

selectively etching a surface of said base layer to form a spatial variation in a thickness of said base layer and thereby form a ridge above said base layer.

136. The process of claim 135, further comprising:

epitaxially growing a first electrode layer underlying said base layer; and

forming a second electrode layer overlying said ridge of said base layer.

137. The process of claim 135, further comprising:

forming an electrode layer over said base layer and adjacent to said ridge.

138. The process of claim 135, further comprising epitaxially depositing a cladding material layer over said ridge and said base layer.

139. The process of claim 113, wherein forming a radiation source further comprises:

epitaxially growing a first cladding layer overlying said template layer;

epitaxially growing a monocrystalline active layer over said first cladding layer; and

epitaxially growing a second cladding layer over said monocrystalline active layer.

140. The process of claim 139, further comprising forming an electrode layer overlying said second cladding layer.

141. The process of claim 113, further comprising forming a tap waveguide overlying said accommodating buffer layer.

142. The process of claim 141, wherein forming a tap waveguide further comprises:

epitaxially growing a first cladding layer overlying said accommodating buffer layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer; and

epitaxially growing a second cladding layer over said monocrystalline core material layer.

143. The process of claim 142, further comprising:

epitaxially growing a first electrode layer underlying said first cladding layer; and

forming a second electrode layer overlying said second cladding layer.

144. The process of claim 141, wherein forming a tap waveguide further comprises:

epitaxially growing a cladding material layer overlying said accommodating buffer layer; and

ion implanting a dopant in said cladding material layer.

145. The process of claim 144, further comprising:

epitaxially growing a first electrode layer underlying said cladding material layer; and

forming a second electrode layer overlying said cladding material layer.

146. The process of claim 141, wherein forming a tap waveguide further comprises:

epitaxially growing a first cladding layer overlying said accommodating buffer layer;

selectively etching a surface of said first cladding material layer;

epitaxially growing a monocrystalline core material layer over said first cladding layer; and

epitaxially growing a second cladding layer overlying said core material layer.

147. The process of claim 146, further comprising:

epitaxially growing a first electrode layer underlying said first cladding layer; and

forming a second electrode layer overlying said second cladding layer.

148. The process of claim 141, further comprising separating radiation transmitted by said electro-optical waveguide into a plurality of radiation streams, wherein each radiation stream is characterized by substantially a single wavelength.

149. The process of claim 113, further comprising forming at least one control circuit at least partially in said monocrystalline substrate.

150. A process for fabricating an integrated optical device structure, the process comprising the steps of:

providing a monocrystalline substrate;

epitaxially growing an accommodating buffer layer over at least one of said substrate and an amorphous interface layer;

epitaxially growing a template layer over said accommodating buffer layer;

forming at least two waveguide structures overlying at least one of said accommodating buffer layer and said template layer; and

forming at least one of an optical emitter and an optical detector overlying said template layer, wherein said at least one of an optical emitter and an optical detector optically communicates with one of said at least two waveguide structures.