An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
First Claim
1. A system for processing a substrate, comprising:
- a load lock chamber;
an intermediate substrate transfer region connected to the load lock chamber, the intermediate substrate transfer region comprising a first substrate transfer chamber and a second substrate transfer chamber, wherein the first substrate transfer chamber is coupled to the load lock chamber and the second substrate transfer chamber is coupled to the first substrate transfer chamber;
a physical vapor deposition (PVD) processing chamber disposed on the first substrate transfer chamber; and
an annealing chamber disposed on the second substrate transfer chamber.
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Accused Products
Abstract
Methods and apparatus are provided for annealing of materials deposited in a processing chamber to form silicide layers. In one aspect, a method is provided for treating a substrate surface including positioning a substrate having silicon material disposed thereon on a substrate support in a chamber, forming a metal layer on at least the silicon material, and annealing the substrate in situ to form a metal silicide layer. In another aspect, the method is performed in an apparatus including a load lock chamber, an intermediate substrate transfer region connected to the load lock chamber, the intermediate substrate transfer region comprising a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber disposed on the first substrate transfer chamber and an annealing chamber disposed on the second substrate transfer chamber.
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Citations
36 Claims
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1. A system for processing a substrate, comprising:
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a load lock chamber;
an intermediate substrate transfer region connected to the load lock chamber, the intermediate substrate transfer region comprising a first substrate transfer chamber and a second substrate transfer chamber, wherein the first substrate transfer chamber is coupled to the load lock chamber and the second substrate transfer chamber is coupled to the first substrate transfer chamber;
a physical vapor deposition (PVD) processing chamber disposed on the first substrate transfer chamber; and
an annealing chamber disposed on the second substrate transfer chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for forming a silicide layer on a substrate, comprising:
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positioning a substrate having silicon material disposed thereon on a substrate support disposed in a deposition chamber having a metal target disposed therein;
applying a current to the substrate support to heat the substrate to a first temperature;
introducing an inert gas into the deposition chamber;
generating a plasma by applying a bias between a metal target and the substrate support in the inert gas environment to sputter material from the metal target;
depositing the sputtered material on at least the silicon material;
providing a backside gas between the substrate pedestal and the substrate; and
annealing the substrate in situ at a second temperature greater than the first temperature to form a metal silicide layer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of processing a substrate, comprising:
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introducing a substrate having silicon material disposed thereon into a load lock;
transferring the substrate to a first transfer chamber in vacuum tight communication with the loadlock;
positioning the substrate on a heating pedestal in a physical vapor deposition chamber in vacuum tight communication with the first transfer chamber;
depositing a metal layer on the silicon material;
annealing the substrate prior to transferring the substrate to a second transfer chamber having an annealing chamber disposed thereon, wherein the second transfer chamber is in vacuum tight communication with the first transfer chamber; and
annealing the substrate in the annealing chamber to form a metal silicide layer. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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Specification