Semiconductor laser device and fabrication method thereof
First Claim
1. A semiconductor laser device comprising a substrate and a compound semiconductor layer composed of a nitride semiconductor formed on said substrate, said substrate including a trench having as a slope a plane inclined 62 degrees from a main plane of said substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane, said compound semiconductor layer being formed on said slope, and including a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor, on said compound semiconductor layer, said active layer having a plane orientation substantially matching the plane orientation of said main plane.
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Abstract
A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.
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Citations
21 Claims
- 1. A semiconductor laser device comprising a substrate and a compound semiconductor layer composed of a nitride semiconductor formed on said substrate, said substrate including a trench having as a slope a plane inclined 62 degrees from a main plane of said substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane, said compound semiconductor layer being formed on said slope, and including a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor, on said compound semiconductor layer, said active layer having a plane orientation substantially matching the plane orientation of said main plane.
- 2. A semiconductor laser device comprising a substrate and a compound semiconductor layer composed of a nitride semiconductor formed on said substrate, said substrate including a trench having as a slope a plane inclined 62 degrees from a main plane of said substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane, said compound semiconductor layer being formed on said slope, and including a lower clad layer composed of a nitride semiconductor, an active layer composed of a nitride semiconductor, and an upper clad layer on said compound semiconductor layer, said lower clad layer and upper clad layer being composed of a nitride semiconductor containing Al.
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3. A semiconductor laser device comprising a silicon substrate, and a compound semiconductor layer composed of a nitride semiconductor formed on said silicon substrate, said silicon substrate including a trench having as a slope a plane inclined 62 degrees from a main plane of said silicon substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane, said compound semiconductor layer being formed on said slope, and including a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor.
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4. A semiconductor laser device comprising a silicon substrate, and a compound semiconductor layer composed of a nitride semiconductor formed on said silicon substrate, said compound semiconductor layer being formed using a silicon substrate having a main plane composed of a plane corresponding to a (100) plane rotated 7.3 degrees about a [01-1] axis or a plane inclined in a range within 3 degrees in an arbitrary direction from the rotated plane, said silicon substrate including a trench having a (111) plane as a slope, said compound semiconductor layer being formed on said slope, and including a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor.
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13. A fabrication method of a semiconductor laser device comprising the steps of:
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forming at a main plane of a substrate, a trench having as a slope a plane inclined 62 degrees from said main plane, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane, growing crystal of a nitride semiconductor on said slope to form a compound semiconductor layer, sequentially stacking on said compound semiconductor layer a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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14. A fabrication method of a semiconductor laser device comprising the steps of:
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forming a trench having a (111) plane as a slope at a main plane of a silicon substrate having said main plane composed of a plane corresponding to a (100) plane rotated 7.3 degrees about a [01-1] axis, or a plane inclined in a range within 3 degrees in an arbitrary direction from the rotated plane, growing crystal of a nitride semiconductor on said slope to form a compound semiconductor layer, and sequentially stacking on said compound semiconductor layer a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor.
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Specification