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Semiconductor laser device and fabrication method thereof

  • US 20030031219A1
  • Filed: 03/26/2002
  • Published: 02/13/2003
  • Est. Priority Date: 08/08/2001
  • Status: Active Grant
First Claim
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1. A semiconductor laser device comprising a substrate and a compound semiconductor layer composed of a nitride semiconductor formed on said substrate, said substrate including a trench having as a slope a plane inclined 62 degrees from a main plane of said substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane, said compound semiconductor layer being formed on said slope, and including a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor, on said compound semiconductor layer, said active layer having a plane orientation substantially matching the plane orientation of said main plane.

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