Semiconductor device and peeling off method and method of manufacturing semiconductor device
First Claim
1. A peeling off method comprising:
- forming a peeled off layer comprising a lamination containing an oxide layer in contact with a nitride layer provided over a substrate;
subsequently peeling of said peeled off layer from said substrate inside said oxide layer or at an interface of said oxide layer by physical means.
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Accused Products
Abstract
The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.
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Citations
75 Claims
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1. A peeling off method comprising:
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forming a peeled off layer comprising a lamination containing an oxide layer in contact with a nitride layer provided over a substrate;
subsequently peeling of said peeled off layer from said substrate inside said oxide layer or at an interface of said oxide layer by physical means. - View Dependent Claims (2, 3, 75)
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4. A peeling off method comprising:
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forming a peeled off layer comprising a lamination containing an oxide layer in contact with a nitride layer provided over a substrate;
adhering said peeled off layer to a support;
subsequently peeling off said peeled off layer adhered to said support from said substrate inside said oxide layer or at an interface of said oxide layer by physical means. - View Dependent Claims (5, 6, 7)
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8. A peeling off method comprising:
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forming a peeled off layer comprising a lamination containing an oxide layer in contact with a metal layer provided over a substrate;
subsequently peeling of said peeled off layer from said substrate inside said oxide layer or at an interface of said oxide layer by physical means. - View Dependent Claims (9, 10, 11, 12)
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13. A peeling off method comprising:
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forming a peeled off layer comprising a lamination containing an oxide layer in contact with a metal layer provided over a substrate;
adhering said peeled off layer to a support;
subsequently peeling off said peeled off layer adhered to said support from said substrate inside said oxide layer or at an interface of said oxide layer by physical means. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of manufacturing a semiconductor device comprising:
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forming a nitride layer over a substrate;
forming an oxide layer over said nitride layer;
forming an insulating layer over said oxide layer;
forming an element over said insulating layer;
adhering said element to a support;
peeling off said support inside said oxide layer or at an interface with said oxide layer from the substrate by physical means after adhering said element to the support; and
adhering a transferring body to said insulating layer or said oxide layer to sandwich said element between said support and said transferring body. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A method of manufacturing a semiconductor device comprising:
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forming a nitride layer over a substrate;
forming an oxide in a granular shape over said nitride layer;
forming an oxide layer for covering said oxide;
forming an insulating layer over said oxide layer;
forming an element over said insulating layer;
adhering a support to said element;
peeling off said support inside said oxide layer or at an interface with said oxide layer from the substrate by physical means after adhering said support to said element; and
adhering a transferring body to said insulating layer or said oxide layer to sandwich said element between said support and said transferring body. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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41. A method of manufacturing a semiconductor device comprising:
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forming a layer containing a metal material over a substrate, forming an oxide layer over said layer containing the metal material, forming an insulating layer over said oxide layer, forming an element over said insulating layer, adhering a support to said element;
peeling off said support inside said oxide layer or at an interface with said oxide layer from the substrate by physical means after adhering said support to said element, and adhering a transferring body to said insulating layer or said oxide layer to sandwich said element between said support and said transferring body. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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54. A method of manufacturing a semiconductor device comprising:
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forming a layer containing a metal material over a substrate, forming an oxide in a granular shape over said layer containing the metal material, forming an oxide layer for covering said oxide, forming an insulating layer over said oxide layer, forming an element over said insulating layer, adhering a support to said element;
peeling off said support inside said oxide layer or at an interfacewith said oxide layer from the substrate by physical means after adhering said support to said element; and
adhering a transferring body to said insulating layer or said oxide layer to sandwich said element between said support and said transferring body. - View Dependent Claims (55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66)
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67. A method of manufacturing a semiconductor device comprising:
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forming a layer containing a metal material over a substrate;
forming an oxide layer over said layer containing the metal material;
forming an insulating layer over said oxide layer;
forming an element over said insulating layer;
peeling off inside said oxide layer or at an interface with said oxide layer from the substrate by physical means;
adhering a first transferring body to said insulating layer or said oxide layer; and
adhering a second transferring body to said element to sandwich said element between said first transferring body and said second transferring body. - View Dependent Claims (68, 69, 70)
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71. A method of manufacturing a semiconductor device comprising:
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forming a nitride layer over a substrate, forming an oxide layer over said nitride layer, forming an insulating layer over said oxide layer, forming an element over said insulating layer, peeling off inside said oxide layer or at an interface with said oxide layer from the substrate by physical means, adhering a first transferring body to said insulating layer or said oxide layer, and adhering a second transferring body to said element to sandwich said element between said first transferring body and said second transferring body. - View Dependent Claims (72)
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73. A semiconductor device comprising:
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a support;
a peeled off layer adhered to said support by an adhesive material, said peeled off layer comprising a silicon oxide film; and
a metallic material provided between said silicon oxide film and said adhesive material. - View Dependent Claims (74)
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Specification