Acoustic sensor, its manufacturing method, and semiconductor electret condenser microphone using the same acoustic sensor

• US 20030035558A1
• Filed: 10/21/2002
• Published: 02/20/2003
• Est. Priority Date: 09/03/1997
• Status: Active Grant

• Current Assignee: Hosiden Electronics Co. Ltd. (Hosiden Corporation)
• Original Assignee: Hosiden Electronics Co. Ltd. (Hosiden Corporation)
• Inventors: Yasuda, Mamoru, Kawamura, Takao, Ohbayashi, Yoshiaki
• Granted Patent: US 7,080,442 B2
• Time in Patent Office: Days
• US Class Current: 381/113
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: H04R 19/016 for microphones
• CPC Class Codes: H04R 31/00 Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182
• CPC Class Codes: H04R 31/006 Interconnection of transducer parts of diaphragm and outer suspension by moulding H04R31/003
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49005 Acoustic transducer
• CPC Class Codes: Y10T 29/4908 Acoustic transducer
• CPC Class Codes: Y10T 29/49798 Dividing sequentially from leading end, e.g., by cutting or breaking

Abstract

The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

Claims

1. A manufacturing method of acoustic sensor comprising a step of forming a necessary electronic circuit on a wafer, and opening a through hole away from said electronic circuit, a step of forming an electrode layer on the wafer surface away from said through hole, a step of laminating an electret film away from part of said electrode layer and said through hole, a step of laminating a spacer on said electret film, a step of forming a diaphragm with a spacing to said electret film on said spacer, and a step of dividing into individual sensors.

6. A manufacturing method of acoustic sensor of any one of claims 1, 2, 3, 4, and 5, wherein said electronic circuit is FET, amplifier circuit and/or noise canceling circuit.

2. A manufacturing method of acoustic sensor comprising a step of forming a necessary electronic circuit on a wafer, a step of forming an electrode layer on the wafer surface, a step of laminating an electret film away from part of said electrode layer, a step of laminating a spacer on said electret film, a step of opening a through hole penetrating through the wafer, electrode layer and electret film away from said electronic circuit, a step of forming a diaphragm with a spacing to said electret film on said spacer, and a step of dividing into individual sensors.

3. A manufacturing method of acoustic sensor comprising a step of forming a necessary electronic circuit on a wafer, and opening a through hole away from said electronic circuit, a step of forming an electrode layer on the wafer surface away from said through hole, a step of laminating an electret film away from part of said electrode layer and said through hole, a step of laminating a spacer on said electret film, a step of dicing the wafer to form individual semiconductor chips, a step of cleaning the individual semiconductor chips, a step of arranging the cleaned individual semiconductor chips with the spacer positioned at the upper side, a step of applying an adhesive to the spacer of the arranged individual semiconductor chips, a step of adhering a film to the spacer of the individual semiconductor chips as a diaphragm by using said adhesive, and a step of cutting the film to form diaphragms.

4. A manufacturing method of acoustic sensor comprising a step of forming a necessary electronic circuit on a wafer, a step of forming an electrode layer on the wafer surface, a step of laminating an electret film away from part of said electrode layer, a step of laminating a spacer on said electret film, a step of opening a through hole penetrating through the wafer, electrode layer and electret film away from said electronic circuit, a step of dicing the wafer to form individual semiconductor chips, a step of cleaning the individual semiconductor chips, a step of arranging the cleaned individual semiconductor chips with the spacer positioned at the upper side, a step of applying an adhesive to the spacer of the arranged individual semiconductor chips, a step of adhering a film to the spacer of the individual semiconductor chips as a diaphragm by using said adhesive, and a step of cutting the film to form diaphragms.

5. A manufacturing method of acoustic sensor comprising a step of forming a necessary electronic circuit on a wafer, a step of forming an electrode layer on the wafer surface, a step of laminating an electret layer on said electrode layer, a step of laminating a spacer on said electret layer, a step of adhering a diaphragm on the spacer, and a step of dividing said wafer into individual acoustic sensors.