Microcavity semiconductor laser coupled to a waveguide
First Claim
1. A semiconductor structure, comprising:
- a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a first monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
a microcavity semiconductor laser formed at least partially of said monocrystalline compound semiconductor material; and
a waveguide overlying said microcavity semiconductor laser.
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Abstract
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The foregoing is utilized for a microcavity semiconductor laser coupled to a waveguide.
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Citations
45 Claims
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1. A semiconductor structure, comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a first monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
a microcavity semiconductor laser formed at least partially of said monocrystalline compound semiconductor material; and
a waveguide overlying said microcavity semiconductor laser. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A semiconductor laser system, comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; and
a plurality of microcavity semiconductor lasers formed at least partly from said monocrystalline compound semiconductor material;
a plurality of waveguides overlying said plurality of microcavity semiconductor lasers, said plurality of waveguides optically coupled to said plurality of semiconductor lasers with an evanescent wave coupling. - View Dependent Claims (41, 42, 43, 44, 45)
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Specification