Sputter target based on titanium dioxide
First Claim
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1. An electrically conducting sputter target comprising:
- titanium dioxide (TiO2) with an electrical resistivity of less than 5 Ω
-cm; and
at least one doping agent or a mixture of doping agents added to the TiO2 in an amount of less than 5 mole %, the doping agent or agents being selected from the group consisting of indium oxide (In2O3), zinc oxide (ZnO), bismuth oxide (Bi2O3), aluminum oxide (Al2O3), gallium oxide (Ga2O3), antimony oxide (Sb2O3), and zirconium oxide (ZrO2).
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Abstract
An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 Ω-cm, which contains as an additive at least one doping agent or a mixture of doping assents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminun oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.
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Citations
7 Claims
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1. An electrically conducting sputter target comprising:
- titanium dioxide (TiO2) with an electrical resistivity of less than 5 Ω
-cm; and
at least one doping agent or a mixture of doping agents added to the TiO2 in an amount of less than 5 mole %, the doping agent or agents being selected from the group consisting of indium oxide (In2O3), zinc oxide (ZnO), bismuth oxide (Bi2O3), aluminum oxide (Al2O3), gallium oxide (Ga2O3), antimony oxide (Sb2O3), and zirconium oxide (ZrO2). - View Dependent Claims (2, 3)
- titanium dioxide (TiO2) with an electrical resistivity of less than 5 Ω
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4. A method for producing a titanium dioxide coating on a substrate, comprising the steps of:
- providing an electrically conducting sputter target including titanium dioxide (TiO2) with an electrical resistivity of less than 5 Ω
-cm, and at least one doping agent or a mixture of doping agents added to the TiO2 in an amount of less than 5 mole %, the doping agent or agents being selected from the group consisting of indium oxide (In2O3), zinc oxide (ZnO), bismuth oxide (Bi2O3), aluminum oxide (Al2O3), gallium oxide (Ga2O3), antimony oxide (Sb2O3), and zirconium oxide (ZrO2); and
coating the substrate by direct-current sputtering. - View Dependent Claims (5, 6)
- providing an electrically conducting sputter target including titanium dioxide (TiO2) with an electrical resistivity of less than 5 Ω
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7. A process for producing a sputter target, the process comprising of the steps of:
- mixing titanium dioxide having an electrical resistivity of less than 5 Ω
-cm with a doping agent or a mixture of doping agents selected from the group consisting of indium oxide (In2O3), zinc oxide (ZnO), bismuth oxide (Bi2O3), aluminum oxide (Al2O3), gallium oxide (Ga2O3), antimony oxide (Sb2O3), and zirconium oxide (ZrO2);
cold-pressuring the mixture; and
sintering the cold-pressed mixture.
- mixing titanium dioxide having an electrical resistivity of less than 5 Ω
Specification