Semiconductor device having a barrier layer

• US 20030038331A1
• Filed: 09/25/2002
• Published: 02/27/2003
• Est. Priority Date: 02/15/1999
• Status: Active Grant

• Current Assignee: Casio Computer Company Limited
• Original Assignee: Casio Computer Company Limited
• Inventors: Mihara, Ichiro, Wakabayashi, Takeshi, Watanabe, Katsumi, Aoki, Yutaka
• Granted Patent: US 6,870,256 B2
• Time in Patent Office: Days
• US Class Current: 257/459
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/5228 Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 23/525 with adaptable interconnections
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/1423 Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/19041 being a capacitor

Abstract

In a semiconductor device such as a CSP, re-wiring is provided on a circuit element formation region of a semiconductor substrate and a columnar electrode for connection with a circuit board is provided on the re-wiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film on the circuit element formation region. A re-wiring is provided over the ground potential layer with a second insulating film interposed. Since the ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region, it is possible to eliminate crosstalk between the re-wiring and a circuit within the circuit element formation region and to freely position the re-wiring without restrictions. Furthermore, a thin-film circuit element may be provided at a given location on the second insulating film. In a structure wherein the thin-film circuit element is provided on the second insulating film, a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed, and re-wiring is provided over the second ground potential layer with an insulating film interposed. Thereby, crosstalk between the re-wiring and thin-film circuit element can be eliminated, and the re-wiring can be freely positioned without restriction.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a circuit element formation region and a connection pad;

a barrier layer provided on said circuit element formation region, through a first insulating film interposed;

re-wiring provided on said first insulating film having said barrier layer, through a second insulating film interposed, and connected to said connection pad; and

a columnar electrode provided on said re-wiring.

2. A semiconductor device according to claim 1, wherein said barrier layer includes one of a ground potential layer, a power supply potential layer and an electromagnetic wave absorption layer.

3. A semiconductor device according to claim 1, which further includes a sealing film provided on an entire upper surface of a resultant structure excluding said columnar electrode.

4. A semiconductor device according to claim 1, which further includes a planar circuit element adhered to a lower surface of said semiconductor substrate.

5. A semiconductor device according to claim 4, wherein said planar circuit element includes one of a film-like capacitor and a film-like resistor.

6. A semiconductor device comprising:

a semiconductor substrate having a circuit element formation region and a connection pad;

a barrier layer provided on said circuit element formation region, through a first insulating film interposed;

a thin-film circuit element provided on said first insulating film having said barrier layer, through a second insulating film interposed; and

a columnar electrode connected to said connection pad.

7. A semiconductor device according to claim 6, wherein said barrier layer includes one of a ground potential layer, a power supply potential layer and an electromagnetic wave absorption layer.

8. A semiconductor device according to claim 6, wherein said thin-film circuit element has at least one insulating film and at least one conductor layer provided with said insulating film interposed.

9. A semiconductor device according to claim 6, which further includes a sealing film provided on an entire upper surface of a resultant structure excluding said columnar electrode.

10. A semiconductor device according to claim 6, wherein said thin-film circuit element includes one of a thin-film inductor, a thin-film transformer, a thin-film capacitor, a thin-film SAW (Surface Acoustic Wave) filter, a microstrip line, and an MMIC (Microwave Monolithic Integrated Circuit).

11. A semiconductor device according to claim 6, which further includes a planar circuit element adhered to a lower surface of said semiconductor substrate.

12. A semiconductor device according to claim 11, wherein said planar circuit element includes one of a film-like capacitor and a film-like resistor.

13. A semiconductor device comprising:

a semiconductor substrate having a circuit element formation region and a connection pad;

a first barrier layer provided on said circuit element formation region, through a first insulating film interposed;

a thin-film circuit element provided on said first insulating film having said barrier layer, through a second insulating film interposed;

a second barrier layer provided on said second insulating film having said thin-film circuit element, through a third insulating film interposed;

re-wiring provided on said third insulating film having said second barrier layer, through a fourth insulating film interposed, and connected to said connection pad; and

a columnar electrode provided on said re-wiring.

14. A semiconductor device according to claim 13, wherein said barrier layer includes one of a ground potential layer, a power supply potential layer and an electromagnetic wave absorption layer.

15. A semiconductor device according to claim 13, which further includes a sealing film provided on an entire upper surface of a resultant structure excluding said columnar electrode.

16. A semiconductor device according to claim 13, wherein said thin-film circuit element includes one of a thin-film inductor, a thin-film transformer, a thin-film capacitor, a thin-film SAW (Surface Acoustic Wave) filter, a microstrip line, and an MMIC (Microwave Monolithic Integrated Circuit).

17. A semiconductor device according to claim 13, which further includes a planar circuit element adhered to a lower surface of said semiconductor substrate.

18. A semiconductor device according to claim 17, wherein said planar circuit element includes one of a film-like capacitor and a film-like resistor.