×

Nonvolatile semiconductor memory device having erasing characteristic improved

  • US 20030042558A1
  • Filed: 08/29/2002
  • Published: 03/06/2003
  • Est. Priority Date: 08/31/2001
  • Status: Abandoned Application
First Claim
Patent Images

1. A semiconductor memory cell allowing information to be written or erased electrically, said semiconductor memory cell comprising:

  • a first insulation layer;

    an electric charge accumulating layer including an insulating material;

    a second insulation layer including a silicon oxide film or a silicon oxynitride film, and being more than 5 nm in thickness; and

    a control electrode formed on said second insulating layer and included a p-type semiconductor containing p-type impurity.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×