Magnetoresistive device and electronic device

• US 20030042562A1
• Filed: 08/27/2002
• Published: 03/06/2003
• Est. Priority Date: 08/30/2001
• Status: Active Grant

• Current Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Giebeler, Carsten, Coehoorn, Reinder, Lenssen, Kars-Michiel Hubert, Zilker, Stephan Johann
• Granted Patent: US 6,876,574 B2
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: H01F 10/32 Spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying spin-exchange-coupled multilayers to substrates H01F41/302
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01L 29/82 controllable by variation of the magnetic field applied to the device
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.

Claims

1. A magnetoresistive device (11) comprising a substrate (4) which carries a first (1) and a second magnetic layer (2) for providing a magnetoresistive effect, said first and second layer (1,2) being interconnected by a non-magnetic space-layer (3).

characterized in that

the first and second layer (1, 2) are patterned and laterally spaced apart on the substrate (4), and the spacer layer (3) comprises a semiconductor material with a chain-like molecular structure.

2. A magnetoresistive device (11) as claimed in claim 1, characterized in that the material of the spacer layer (3) is an organic semiconductor material.

3. A magnetoresistive device (11) as claimed in claim 1, characterized in that the material of the spacer layer (3) is a nanowire.

4. A device (11) as claimed in claim 1, characterized in that an electrically conducting layer (13) is present between the magnetic layers (1,2) and the spacer layer (3).

5. A device (11) as claimed in claim 4, characterized in that a tunnel barrier layer (21) is present between the electrically conducting layer (13) and the spacer layer (3).

6. A device (11) as claimed in claim 4 or 5, characterized in that the magnetic layers (1,2) are present between the spacer layer (3) and the substrate (4).

7. A device (11) as claimed in claim 1, characterized in that an electrode (19) is present for influencing a charge distribution in a region of the spacer layer (3) located between the first and the second magnetic layer (1,2), the electrode being separated from the spacer layer (3) by a dielectric layer (18).

8. A device as claimed in claim 2, the organic semiconductor material of the spacer layer (3) is doped to render it electrically conductive.

9. A device as claimed in claim 1 characterized in that the magnetic layers (1,2) are ferromagnetic.

10. An electronic device provided with a magnetic memory comprising an array of magnetoresistive devices as claimed in any one of the claims 1 to 9.