Method of manufacturing compound single crystal

• US 20030045102A1
• Filed: 08/26/2002
• Published: 03/06/2003
• Est. Priority Date: 08/27/2001
• Status: Active Grant

• Current Assignee: Hoya Corporation
• Original Assignee: Hoya Corporation
• Inventors: Kawahara, Takamitsu, Yagi, Kuniaki, Nagasawa, Hiroyuki
• Granted Patent: US 7,101,774 B2
• Time in Patent Office: Days
• US Class Current: 438/689
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/36 Carbides

Abstract

Provided is a method of manufacturing compound single crystals by epitaxially growing a compound single crystal layer differing from the substrate in which the planar defects generated in the crystal that is epitaxially grown are reduced. The method of manufacturing compound single crystals in which a compound single crystalline layer differing from a compound single crystalline substrate is epitaxially grown on the surface of said substrate. Plural undulations extending in a single direction are present on at least a portion of the surface of said substrate, and in that said undulations are provided in such a manner that as said compound single crystalline layer grows, the defects that grow meet each other.

Claims

1. A method of manufacturing compound single crystals in which a compound single crystalline layer differing from a compound single crystalline substrate is epitaxially grown on the surface of said substrate,

characterized in that plural undulations extending in a single direction are present on at least a portion of the surface of said substrate, and in that said undulations are provided in such a manner that as said compound single crystalline layer grows, the defects that grow meet each other.

2. The method of manufacturing according to claim 1 wherein said plural undulations are wavy or serrated in shape in a cross-section perpendicular to the direction of extension of said undulations.

3. The method of manufacturing according to claim 1 or 2 wherein said compound single crystal constituting said compound single crystalline layer and said compound single crystal constituting said compound single crystalline substrate have similar space lattices.

4. The method of manufacturing according to claim 1 or 2 wherein said compound single crystalline substrate is single crystalline SiC.

5. The method of manufacturing according to claim 4 wherein said compound single crystalline layer is gallium nitride, aluminum nitride, indium gallium nitride, or aluminum gallium nitride.

6. The method of manufacturing according to claim 4 or 5 wherein said single crystalline SiC substrate is cubic SiC and the basal plane is the (001) face, or is hexagonal SiC and the basal plane is the (11-20) face or the (1100) face.