Detecting apparatus and device manufacturing method

• US 20030047682A1
• Filed: 09/10/2002
• Published: 03/13/2003
• Est. Priority Date: 09/10/2001
• Status: Active Grant

• Current Assignee: Ebara Corporation, Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Ebara Corporation, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Murakami, Takeshi, Yamazaki, Yuichiro, Noji, Nobuharu, Hatakeyama, Masahiro, Satake, Tohru, Nagahama, Ichirota
• Granted Patent: US 7,075,072 B2
• Time in Patent Office: Days
• US Class Current: 250/310
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: H01J 2237/2441 Semiconductor detectors, e.g. diodes
• CPC Class Codes: H01J 2237/2446 Position sensitive detectors
• CPC Class Codes: H01J 37/244 Detectors; Associated components or circuits therefor
• CPC Class Codes: H01J 37/285 Emission microscopes, e.g. field-emission microscopes

Abstract

A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wherein the sensor is disposed at an inside of the different environment, a processing device to process detection signals from the sensor is disposed at an outside of the different environment, and a transmission means transmits detection signals from the sensor to the processing device.

Claims

1. A detecting apparatus for detecting a fine geometry on a surface of a sample, comprising:

a means for irradiating an irradiation beam against the sample placed in a different environment different from an atmosphere;

a sensor;

a means for guiding a secondary radiation emanated from the sample to the sensor;

a processing device for processing a detection signal output from the sensor; and

a transmission means for transmitting the detection signal from the sensor to the processing device,

wherein the sensor is disposed at an inside of the different environment, the processing device is disposed at an outside of the different environment.

2. A detecting apparatus according to claim 1, wherein the different environment is a vacuum environment, and the sensor is a TDI sensor or a CCD sensor.

3. A detecting apparatus according to claim 1, further comprising a sensor package which includes the sensor and the transmission means.

4. A detecting apparatus according to claim 1, wherein the sensor has 100 or more pins.

5. A detecting apparatus according to claim 1, further comprising an electron source and an electronic optical control mechanism, the electronic optical control mechanism controlling an electron beam output from the electron source so as to direct the electron beam into the sample.

6. A detecting apparatus according to claim 5, further comprising a noise-cut aperture.

7. A detecting apparatus according to claim 5, wherein the electronic optical control mechanism has a map optical system.

8. A detecting apparatus according to claim 5, further comprising an electronic amplifier disposed before the sensor for amplifying amount of incident electrons into the sensor.

9. A detecting apparatus according to claim 1, wherein the irradiation beam is a beam selected from a group consisting of an X-ray, an ultraviolet ray and an ultraviolet-ray laser beam.

10. A detecting apparatus according to claim 1, wherein the irradiation beam is either of a combination of the electron beam and the ultraviolet ray or another combination of the electron beam and the X-ray.

11. A detecting apparatus according to claim 1, wherein the irradiation beam is either of a combination of the electron beam and the ultraviolet-ray laser beam or another combination of the electron beam and the x-ray laser beam.

12. A defect inspection apparatus comprising a detecting apparatus defined in any one of claims 1 through 11.

13. A defect inspection apparatus according to claim 12, further comprising:

a sample conveying mechanism;

a sample chuck; and

a stage for carrying the sample thereon, all of those components being controlled by a computer.

14. A manufacturing method of a semiconductor device including a process for inspecting a wafer for any defects in the course of processing, using a detecting apparatus as defined in any one of claims 1 through 11.

15. A manufacturing method of a semiconductor device including a process for inspecting a wafer for any defects in the course of processing, using a defect inspection apparatus as defined in claim 13.