Semiconductor device

• US 20030047804A1
• Filed: 08/09/2002
• Published: 03/13/2003
• Est. Priority Date: 09/10/2001
• Status: Active Grant

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Otani, Hiroshi
• Granted Patent: US 6,963,134 B2
• Time in Patent Office: Days
• US Class Current: 257/723
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10161 : with a rectangular active surface
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A highly reliable semiconductor device less susceptible to external noise is provided. The semiconductor device has a signal output chip and a substrate. The signal output chip has one or more semiconductors and outputs a predetermined signal. The substrate has a circuit formed thereon and is electrically connected to the signal output chip. A potential of the substrate is fixed to a certain level.

Claims

1. A semiconductor device comprising:

a signal output chip which has one or more semiconductors and which outputs a predetermined signal; and

a substrate which has a circuit formed thereon, said circuit electrically connected to the signal output chip,

wherein a potential of the substrate is fixed to a certain level.

2. The semiconductor device according to claim 1, wherein the potential of the substrate is fixed to a ground level.

11. The semiconductor device according to claim 1, wherein the signal output chip is formed on a substrate of the signal output chip, and wherein a rear surface of the substrate of the signal output chip has a metal layer.

3. A semiconductor device comprising:

a signal output chip which has one or more semiconductors and which outputs a predetermined signal;

a substrate which has a circuit formed thereon, said circuit electrically connected to the signal output chip; and

a die pad, to which the substrate fixedly attached by a conductive material,

wherein a potential of the die pad is fixed to a certain level.

4. The semiconductor device according to claim 3, wherein the conductive material is a conductive resin.

5. The semiconductor device according to claim 3, wherein the conductive material is a conductive metal.

6. The semiconductor device according to claim 3, further comprising a signal processing chip fixedly attached to the die pad by a conductive material, said signal processing chip processing the signal outputted from the signal output chip,

wherein by applying a ground potential level to the signal processing chip, potentials of the die pad and the substrate are fixed to the certain ground potential level.

7. The semiconductor device according to claim 6, wherein the conductive material is a conductive resin.

8. The semiconductor device according to claim 6, wherein the conductive material is a conductive metal.

9. The semiconductor device according to claim 6, wherein the die pad is arranged at a position farther from a side of the substrate, on which the semiconductor device is mounted, than the signal output chip, the substrate and the signal processing chip.

12. The semiconductor device according to claim 3, wherein the signal output chip is formed on a substrate of the signal output chip, and wherein a rear surface of the substrate of the signal output chip has a metal layer.

10. A semiconductor device comprising:

a signal output chip which has one or more semiconductors and which outputs a predetermined signal;

a substrate which has a circuit formed thereon, said circuit electrically connected to the signal output chip;

a signal processing chip which processes the signal outputted from the signal output chip; and

a conductive layer formed on a surface of the signal processing chip, and having a conductive property, said conductive layer fixedly attached to the substrate by a conductive material,

wherein by fixing a potential of the conductive layer to a certain level, a potential of a surface, which the signal output chip and the substrate contacts, is fixed to the certain level.

13. The semiconductor device according to claim 10, wherein the signal output chip is formed on a substrate of the signal output chip, and wherein a rear surface of the substrate of the signal output chip has a metal layer.