Nanolayer thick film processing system and method
First Claim
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1. A process to deposit a thin film by chemical vapor deposition, comprising:
- evacuating a chamber of gases;
(a) exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of atomic layers in thickness;
(b) evacuating the chamber of gases;
(c) exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film deposited by the first reactant is treated; and
(d) repeating steps (a)-(c).
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Abstract
A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.
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Citations
20 Claims
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1. A process to deposit a thin film by chemical vapor deposition, comprising:
- evacuating a chamber of gases;
(a) exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of atomic layers in thickness;
(b) evacuating the chamber of gases;
(c) exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film deposited by the first reactant is treated; and
(d) repeating steps (a)-(c). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
- evacuating a chamber of gases;
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18. A process to deposit a thin film by chemical vapor deposition, comprising:
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(a) pre-cleaning a surface of a device;
(b) evacuating a chamber of gases;
(c) stabilizing precursor flow and pressure;
(d) exposing the device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of atomic layers in thickness;
(e) purging the chamber;
(f) evacuating the chamber of gases;
(g) striking the plasma;
(h) performing a plasma treatment for the deposition;
(i) exposing the device, coated with the first reactant, to a gaseous second reactant under the plasma treatment, the thin film deposited by the first reactant is treated; and
(j) repeating steps (c)-(i).
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19. An apparatus to perform nano-layer deposition (NLD), comprising:
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a high density inductive coupled plasma generator to generate plasma; and
a process chamber housing the plasma generator, wherein the chamber exposes a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film and, after purging, exposes the device, coated with the first reactant, to a gaseous second reactant under plasma, the thin film deposited by the first reactant is treated. - View Dependent Claims (20)
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Specification