Method of forming metal wiring line
First Claim
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1. A method of forming a metal wiring line, comprising the steps of:
- (a) forming a first insulating film directly or indirectly on a semiconductor substrate;
(b) forming a second insulating film on said first insulating film;
(c) forming a wiring line groove to pass through said second insulating film to an inside of said first insulating film;
(d) forming a conductive film to fill said wiring line groove and to cover said second insulating film; and
(e) removing said conductive film and said second insulating film by a first CMP polishing process, using said first insulating film as a stopper film, until said first insulating film is exposed.
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Abstract
In a method of forming a metal wiring line, a first insulating film is formed directly or indirectly on a semiconductor substrate. A second insulating film is formed on the first insulating film. A wiring line groove is formed to pass through the second insulating film to an inside of the first insulating film. A conductive film is formed to fill the wiring line groove and to cover the second insulating film. The conductive film and the second insulating film are removed by a first CMP polishing process, using the first insulating film as a stopper film, until the first insulating film is exposed.
19 Citations
23 Claims
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1. A method of forming a metal wiring line, comprising the steps of:
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(a) forming a first insulating film directly or indirectly on a semiconductor substrate;
(b) forming a second insulating film on said first insulating film;
(c) forming a wiring line groove to pass through said second insulating film to an inside of said first insulating film;
(d) forming a conductive film to fill said wiring line groove and to cover said second insulating film; and
(e) removing said conductive film and said second insulating film by a first CMP polishing process, using said first insulating film as a stopper film, until said first insulating film is exposed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming a metal wiring line, comprising the steps of:
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(a) forming an organic insulating film with a dielectric constant lower than that of silicon dioxide directly or indirectly on a semiconductor substrate;
(b) forming an inorganic insulating film on said organic insulating film;
(c) forming a wiring line groove to pass through said second insulating film to an inside of said first insulating film;
(d) forming a first conductive film to cover an inner wall surface of said wiring line groove and to cover said second insulating film;
(e) forming a second conductive film to fill said wiring line groove and to cover said first conductive film; and
(f) removing said first and second conductive films and said inorganic insulating film by a first CMP polishing process using slurry containing abrasive particles, until said organic insulating film is exposed, and wherein a polishing selection ratio of said abrasive particles of a polishing rate of said second insulating film to a polishing rate of said first insulating film is 5 or above. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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Specification