Semiconductor device including molded wireless exposed drain packaging

• US 20030052408A1
• Filed: 09/24/2001
• Published: 03/20/2003
• Est. Priority Date: 04/13/2000
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Quinones, Maria C.Y., Tangpuz, Consuelo N.
• Granted Patent: US 6,989,588 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/37 of an individual strap connector
• CPC Class Codes: H01L 24/40 of an individual strap connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A semiconductor device including a leadframe and a die coupled thereto. A drain pad is coupled to the drain region of the die in a body that substantially envelopes the leadframe and the die. The body includes a window defined therein. The body is placed around the leadframe and the die such that a surface of the drain pad opposite the die is exposed through the window.

Claims

1. 1. A semiconductor device comprising:

a leadframe including a source pad and a gate pad, the leadframe further including a plurality of leads extending from the source pad and at least one lead extending from the gate pad;

a die coupled to the leadframe;

a drain pad coupled to a drain region of the die; and

a body including a window defined therein and substantially enveloping the leadframe and die such that a surface of the drain pad opposite the die is exposed through the window.

2. A semiconductor device in accordance with claim 1 wherein the leads are formed such that ends of the leads are coplanar with the exposed surface of the drain pad.

3. A semiconductor device in accordance with claim 1 wherein the drain pad is coupled to the die with soft soldering material.

4. A semiconductor device in accordance with claim 1 wherein the drain pad includes a side lip, the semiconductor device further comprising a lead rail that includes a plurality of leads that is coupled to the drain pad at the side lip.

5. A semiconductor device in accordance with claim 4 wherein the drain pad is coupled to the die with soft soldering material and the lead rail is coupled to the side lip with soft soldering material.

6. A semiconductor device in accordance with claim 4 wherein the leadframe further includes two tie bars at each end of the leadframe.

7. A method of packaging a semiconductor die, the method comprising:

providing a leadframe;

attaching a bumped die including solder bumps to the leadframe with a soft soldering material having a slightly lower melting temperature than the solder bumps;

attaching a drain pad to a drain region of the die; and

coupling a body to the leadframe and die such that a portion of the drain pad is exposed through a window defined within the body.

8. A method in accordance with claim 7 further comprising providing a lead rail and coupling an edge of the drain pad to the lead rail.

9. A method in accordance with claim 7 further comprising forming ends of leads of the leadframe such that they are coplanar with the exposed portion of the drain pad.

10. A method in accordance with claim 7 wherein the soft soldering material comprises one of:

88Pb10Sn2Ag, 82.5P5Pb10Sb5Sn, 90Pb10Sb or Pb-free solder with equivalent melting temperature.