Synthesis of layers, coatings or films using precursor layer exerted pressure containment

• US 20030054582A1
• Filed: 07/17/2002
• Published: 03/20/2003
• Est. Priority Date: 09/20/2001
• Status: Active Grant

• Current Assignee: HelioVolt Corporation
• Original Assignee: HelioVolt Corporation
• Inventors: Stanbery, Billy J.
• Granted Patent: US 6,720,239 B2
• Time in Patent Office: Days
• US Class Current: 438/46
• CPC Class Codes: C23C 14/0005 Separation of the coating from the substrate
• CPC Class Codes: C23C 14/5846 Reactive treatment
• CPC Class Codes: C23C 14/5886 Mechanical treatment involving removal of material C23C14/588
• CPC Class Codes: C23C 14/5893 Mixing of deposited material
• CPC Class Codes: C23C 26/00 Coating not provided for in groups C23C2/00 - C23C24/00
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 156/1111 Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]

Abstract

Systems and methods are described for synthesis of films, coatings or layers using precursor exerted pressure containment. A method includes exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

Claims

1. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

2. The method of claim 1, where the first precursor layer includes a first chemical reactant, the second precursor layer includes a second chemical reactant, and the composition layer includes a chemical product yielded by a chemical reaction between the first chemical reactant and the second chemical reactant.

3. The method of claim 1, wherein the first chemical reactant includes a first multinary compound and the second chemical reactant includes a second multinary compound.

4. The method of claim 1, wherein the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the composition layer.

5. The method of claim 1, further comprising heating the first precursor layer.

6. The method of claim 1, wherein at least a portion of the second precursor layer melts and substantially no portion of the first precursor layer melts.

7. The method of claim 1, wherein the first substrate includes a tool.

8. The method of claim 7, wherein a release layer is located between the tool and the first precursor layer.

9. The method of claim 8, wherein the release layer functions as a template.

10. The method of claim 8, wherein the release layer includes at least one fluoride selected from the group consisting of CaF₂ and SrF₂.

11. The method of claim 7, further comprising coupling another precursor layer to the tool after moving.

12. The method of claim 1, wherein an electrode layer is located between the second precursor layer and the second substrate.

13. The method of claim 12, wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.

14. The method of claim 1, wherein the composition layer includes copper, indium and selenide.

15. The method of claim 14, further comprising controlling the temperature of the second precursor layer within a range of from approximately 520°

C. to approximately 635°

C.

16. The method of claim 14, wherein the first precursor layer includes (In,Ga)_y(S,Se)_1-y and the second precursor layer includes Cu_xSe_1-x.

17. The method of claim 1, further comprising applying an electrostatic field across the first precursor and the second precursor.

18. The method of claim 17, wherein the electrostatic field controls, at least in-part, the pressure.

19. The method of claim 1, wherein a template layer is located between the first precursor layer and the first substrate.

20. The method of claim 19, wherein the template layer includes copper, indium and selenide.

21. The method of claim 20, wherein the template layer includes aluminum and sulfur.

22. The method of claim 1, wherein a template layer is located between the second precursor layer and the second substrate.

23. The method of claim 1, wherein a surfactant is located between the first precursor layer and the first substrate.

24. The method of claim 1, wherein a surfactant is located between the first precursor and the second precursor.

25. The method of claim 1, wherein an adhesion layer is located between the first precursor layer and the first substrate.

26. The method of claim 1, wherein an adhesion layer is located between the second precursor layer and the second substrate.

27. The method of claim 1, wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.

28. The method of claim 1, wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.

29. The method of claim 1, wherein

the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition;

and

the second precursor layer is coupled to the second substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.

30. The method of claim 1, further comprising depositing a buffer layer on the composition layer.

31. The method of claim 30, further comprising depositing a window layer on the buffer layer.

32. A photovoltaic device made by the method of claim 1.

33. An electrical power generation system comprising the photovoltaic device of claim 32.

34. An electronic device made by the method of claim 1.

35. A photodiode made by the method of claim 1.

36. A composition prepared by a process comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

37. A photovoltaic device comprising the composition of claim 36.

38. An electrical power generation system comprising the photovoltaic device of claim 37.

39. An electronic device comprising the composition of claim 36.

40. A photodiode comprising the composition of claim 36.

41. A process of preparing a film formed of multinary compounds, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

42. A photovoltaic device made by the process of claim 41.

43. An electrical power generation system comprising the photovoltaic device of claim 42.

44. An electronic device made by the process of claim 41.

45. A photodiode made by the process of claim 41.

46. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate.

47. The method of claim 46, wherein modifying includes removing.

48. The method of claim 47, wherein removing includes etching.

49. The method of claim 47, wherein removing includes mechanical motion and a portion of the first substrate is not removed.