High throughput chemical analysis by improved desorption/ionization on silicon mass spectrometry
First Claim
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1. A method of making improved substrates for desorbing and ionizing analytes comprising:
- providing an n-type semiconductor substrate;
providing a light source;
focusing the illumination from the light source onto the n-type semiconductor substrate to result in at least one lit region on the n-type semiconductor substrate; and
electrochemically etching the n-type semiconductor substrate with a low current during illumination to form at least one sample reservoir on the substrate, each sample reservoir being formed at a respective lit region on the n-type semiconductor substrate.
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Abstract
A method of making improved substrates for desorbing and ionizing analytes takes an n-type semiconductor substrate and provides a strong light source. By focusing the illumination from the light source onto the n-type semiconductor substrate results in at least one lit region on the n-type semiconductor substrate. The substrate is electrochemically etched with a low current during illumination to form at least one sample reservoir, each sample reservoir being formed at a respective lit region on the n-type semiconductor substrate.
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Citations
19 Claims
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1. A method of making improved substrates for desorbing and ionizing analytes comprising:
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providing an n-type semiconductor substrate;
providing a light source;
focusing the illumination from the light source onto the n-type semiconductor substrate to result in at least one lit region on the n-type semiconductor substrate; and
electrochemically etching the n-type semiconductor substrate with a low current during illumination to form at least one sample reservoir on the substrate, each sample reservoir being formed at a respective lit region on the n-type semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making improved substrates for desorbing and ionizing analytes comprising:
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providing an n-type silicon substrate;
providing a white light source;
masking the illumination from the strong light source to define a light pattern;
focusing the light pattern on the n-type semiconductor substrate to result in a plurality of lit regions on the n-type semiconductor substrate lit with a strength of about 20-50 milliwatts per centimeter squared;
electrochemically etching the n-type semiconductor substrate for 1-2 minutes at a current of about 4 milliamps during illumination to form a sample reservoir at each lit region;
oxidizing at least one sample reservoir to form an oxidized sample reservoir; and
chemically etching the oxidized sample reservoir to form a double etched sample reservoir.
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9. A method of simultaneously assaying a plurality of organic compound analytes for a desired physical property comprising:
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providing a n-type semiconductor substrate having at least one double etched sample reservoir defined therein;
providing a sample having at least one organic compound analyte;
providing a source of radiation introducing less than one picomole of the sample containing to the double etched sample reservoir to adsorb the sample to the substrate free of matrix material;
irradiating the sample reservoir so that the sample reservoir absorbs the radiation and desorbs the analyte;
analyzing the desired physical property of the desorbed and ionized analyte. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification