SEMICONDUCTOR DEVICE COMPRISING A THIN FILM TRANSISTOR AND METHOD OF MANUFACURING THE SAME

• US 20030057419A1
• Filed: 03/01/2000
• Published: 03/27/2003
• Est. Priority Date: 03/02/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Murakami, Satoshi, Hirakata, Yoshiharu, Osame, Mitsuaki, Koyama, Jun, Tanaka, Yukio, Yamazaki, Shunpel
• Granted Patent: US 7,821,065 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.

The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.

Claims

1. A semiconductor device characterized in having a capacitor comprising:

a first electrode on an organic resin film;

an oxide film at least on a portion of a surface of the first electrode; and

a second electrode covering at least a portion of said oxide film.

4. A semiconductor device according to claim 1 wherein said first electrode comprises a material capable of anodic oxidation.

6. A semiconductor device according to claim 1 wherein a wrap around amount X of the oxide film at an edge of said first electrode is 0.5 μ

m or less.

8. A semiconductor device according to claim 1 wherein a wrap around amount X of the oxide film at an edge of said first electrode is 0.1 μ

m or less.

22. A semiconductor device according to claim 1 wherein said semiconductor device is selected from a group consisting of active matrix liquid crystal display, active matrix EL display and active matrix EC display.

27. An electrooptical device which loads the semiconductor of claim 1 as a display medium.

31. An electrooptical device according to claim 27 wherein said electrooptical device is one selected from a group consisting of video camera, digital camera, projector, goggle type display, car navigation system, personal computer and portable information terminal.

2. A semiconductor device characterized in having a capacitor comprising:

an inorganic film over an organic resin film;

a first electrode on said inorganic film;

an oxide film at least on a portion of a surface of the first electrode; and

a second electrode covering at least a portion of said oxide film.

3. A semiconductor device according to claim 2, wherein siad inorganic film is formed by sputtering.

5. A semiconductor device according to claim 2 wherein said first electrode comprises a material capable of anodic oxidation.

7. A semiconductor device according to claim 2 wherein a wrap around amount X of the oxide film at an edge of said first electrode is 0.5 μ

m or less.

9. A semiconductor device according to claim 2 wherein a wrap around amount X of the oxide film at an edge of said first electrode is 0.1 μ

m or less.

23. A semiconductor device according to claim 2 wherein said semiconductor device is selected from a group consisting of active matrix liquid crystal display, active matrix EL display and active matrix EC display.

24. A semiconductor device according to claim 2 wherein said semiconductor device is selected from a group consisting of active matrix liquid crystal display, active matrix EL display and active matrix EC display.

28. An electrooptical device which loads the semiconductor of claim 2 as a display medium.

32. An electrooptical device according to claim 28 wherein said electrooptical device is one selected from a group consisting of video camera, digital camera, projector, goggle type display, car navigation system, personal computer and portable information terminal.

10. A semiconductor device comprising at least a pixel matrix circuit over a substrate, wherein a storage capacitor of said pixel matrix circuit comprises:

a shielding film provided over an organic resin film;

an oxide film of said shielding film; and

a pixel electrode disposed on the oxide film.

12. A semiconductor device according to claim 10 wherein said shielding film comprises a material capable of anodic oxidation.

14. A semiconductor device according to claim 10 wherein a wrap around amount X of the oxide film at an edge of said first electrode is 0.5 μ

m or less.

16. A semiconductor device according to claim 10 wherein said pixel matrix circuit is planarized by a color filter.

18. A semiconductor device according to claim 10 wherein said pixel electrode comprises a transparent conductive film.

20. A semiconductor device according to claim 10 wherein said pixel electrode comprises a reflective material.

25. A semiconductor device according to claim 10 wherein said semiconductor device is selected from a group consisting of active matrix liquid crystal display, active matrix EL display and active matrix EC display.

29. An electrooptical device which loads the semiconductor of claim 10 as a display medium.

33. An electrooptical device according to claim 29 wherein said electrooptical device is one selected from a group consisting of video camera, digital camera, projector, goggle type display, car navigation system, personal computer and portable information terminal.

11. A semiconductor device comprising at least a pixel matrix circuit and a driver circuit over a substrate characterized in:

that at least a portion or all of a lightly doped drain region of a n-channel TFT comprising said driver circuit is disposed so as to over lap with a gate electrode of said n-channel TFT;

that a lightly doped region of a pixel TFT that comprises the pixel matrix circuit is disposed so as not to overlap with a gate electrode of the pixel TFT;

that a storage capacitor in the pixel matrix circuit comprises a shielding film disposed over an organic resin film, an oxide film of said shielding film and a pixel electrode; and

that impurity element imparting n type is included in a lightly doped drain region of n-channel TFT that comprises the driver circuit in a higher concentration than that in a lightly doped drain region of the pixel TFT.

13. A semiconductor device according to claim 11 wherein said shielding film comprises a material capable of anodic oxidation.

15. A semiconductor device according to claim 11 wherein a wrap around amount X of the oxide film at an edge of said first electrode is 0.5 μ

m or less.

17. A semiconductor device according to claim 11 wherein said pixel matrix circuit is planarized by a color filter.

19. A semiconductor device according to claim 11 wherein said pixel electrode comprises a transparent conductive film.

21. A semiconductor device according to claim 11 wherein said pixel electrode comprises a reflective material.

26. A semiconductor device according to claim 11 wherein said semiconductor device is selected from a group consisting of active matrix liquid crystal display, active matrix EL display and active matrix EC display.

30. An electrooptical device which loads the semiconductor of claim 11 as a display medium.

34. An electrooptical device according to claim 30 wherein said electrooptical device is one selected from a group consisting of video camera, digital camera, projector, goggle type display, car navigation system, personal computer and portable information terminal.

35. A method for manufacturing a semiconductor device comprising the steps of:

forming a resin film over a thin film transistor;

forming a first electrode on said resin film;

forming an oxide film of the first electrode;

forming a second electrode covering at least a portion of or all of the oxide film,

wherein a capacitor is formed by the first electrode, the oxide film of the first electrode and the second electrode.

38. A method according to claim 35 wherein said step of forming an oxide film uses anodic oxidation, and characterized by applied voltage/electric supply time is 11 V/min or greater.

36. A method for manufacturing a semiconductor device comprising the steps of:

forming a resin film over a thin film transistor;

forming an inorganic film on said resin film;

forming a first electrode on said organic film;

forming an oxide film on the first electrode; and

forming a second electrode covering at least a portion of or all of the oxide film,

wherein a capacitor is formed by the first electrode, the oxide film of the first electrode and the second electrode.

37. A method according to claim 36 wherein said step of forming an inorganic film on said resin film is performed by sputtering.

39. A method according to claim 36 wherein said step of forming an oxide film uses anodic oxidation, and characterized by applied voltage/electric supply time is 11 V/min or greater.

40. A method for manufacturing a semiconductor device comprising at least a pixel matrix circuit and a driver circuit over a substrate, comprising the steps of:

forming a channel forming region, a source region, a drain region and a lightly doped drain region sandwiched between the channel forming region and the source region or the drain region, in an active layer of a n-channel TFT that comprises the driver circuit,

forming a channel forming region, a source region and a drain region in an active layer of a p-channel TFT that comprises the driver circuit;

forming a channel forming a source region, a drain region and a lightly doped drain region sandwiched between the channel forming region and the source region or the drain region, in an active layer of a pixel TFT that comprises the pixel matrix circuit;

forming an interlayer insulating film comprising organic resin film over n-channel TFT and p-channel TFT that comprises the driver circuit and over the pixel TFT that comprises the pixel matrix circuit;

forming a shielding film over the interlayer insulating film;

forming an oxide film of the shielding film on a surface of the shielding film; and

forming a pixel electrode which contacts the oxide film of the shielding film so as to overlap the shielding film,

characterized by;

that at least a portion of, or all of the lightly doped drain region of the n-channel TFT that comprises the driver circuit is disposed so as to overlap a gate electrode of the n-channel TFT;

that the lightly doped drain region of the pixel TFT is disposed so as not to overlap a gate electrode of the pixel TFT; and

that an impurity element imparting n-type is doped in the lightly doped drain region of the n-channel TFT that comprises the driver circuit at a higher concentration than the lightly doped drain region of the pixel TFT.

41. A method according to claim 40, wherein said step of forming an oxide film of the shielding film is an anodic oxidation process characterized by applied voltage/electric supply time at 11 V/min or greater.

42. A semiconductor device comprising at least a pixel matrix circuit over a substrate, wherein said pixel matrix circuit is planarized by a color filter.