Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device

• US 20030058916A1
• Filed: 08/26/2002
• Published: 03/27/2003
• Est. Priority Date: 08/27/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Moriwaka, Tomoaki, Tanaka, Koichiro
• Granted Patent: US 8,507,334 B2
• Time in Patent Office: Days
• US Class Current: 372/101
• CPC Class Codes: B23K 26/06 Shaping the laser beam, e.g. by masks or multi-focusing
• CPC Class Codes: B23K 26/0604 by a combination of beams
• CPC Class Codes: B23K 26/064 by means of optical elements, e.g. lenses, mirrors or prisms
• CPC Class Codes: B23K 26/0732 into a rectangular shape
• CPC Class Codes: B23K 26/0736 into an oval shape, e.g. elliptic shape
• CPC Class Codes: B23K 26/0738 into a linear shape
• CPC Class Codes: G02B 27/09 Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for adapting the beam shape of a laser diode G02B19/0052; adapting the beam shape of an LED G02B19/0061; coupling into light guides using intermediate optical elements G02B6/4204; beam shaping specially adapted for lasers H01S3/005
• CPC Class Codes: G02B 27/095 Refractive optical elements
• CPC Class Codes: G02B 27/0955 Lenses lenses per se G02B3/00
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/28017 the insulator being formed after the semiconductor body, the semiconductor being silicon
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01S 3/005 Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B
• CPC Class Codes: H01S 5/4012 Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
• CPC Class Codes: H01S 5/4025 : Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence
• CPC Class Codes: H10K 50/84 : Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/8426 : Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/122 : Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/87 : Passivation; Containers; Encapsulations

Abstract

If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Claims

1. A laser irradiation apparatus, comprising:

a laser;

a first forming means for providing a laser beam emitted from the laser with a uniform energy distribution in a first direction perpendicular to an optical axis of the laser beam;

a second forming means for setting a convergent position in the first direction of the laser beam on an irradiation surface; and

a third forming means for providing the laser beam with a uniform energy distribution in a second direction perpendicular to both the optical axis and the first direction.

6. A laser irradiation apparatus according to claim 1, wherein the laser is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

11. A laser irradiation apparatus according to claim 1, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

16. A laser irradiation apparatus according to claim 1, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

21. A laser irradiation apparatus according to claim 1, wherein the laser beam is converted into a harmonic by a non-linear optical element.

2. A laser irradiation apparatus, comprising:

a laser;

a first optical system for dividing a laser beam emitted from the laser into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam;

a second optical system for superposing into one the plurality of laser beams which are divided in the first direction;

a third optical system for setting a convergent position of the superposed laser beam on an irradiation surface;

a fourth optical system for dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction; and

a fifth optical system for superposing into one the plurality of laser beams which are divided in the second direction.

7. A laser irradiation apparatus according to claim 2, wherein the laser is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

12. A laser irradiation apparatus according to claim 2, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

17. A laser irradiation apparatus according to claim 2, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

22. A laser irradiation apparatus according to claim 2, wherein the laser beam is converted into a harmonic by a non-linear optical element.

3. A laser irradiation apparatus, comprising:

a laser;

a first cylindrical lens array for dividing a laser beam emitted from the laser into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam;

a first cylindrical lens for superposing into one the plurality of laser beams which are divided in the first direction;

a second cylindrical lens for setting a convergent position of the superposed laser beam on an irradiation surface;

a second cylindrical lens array for dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction; and

a third cylindrical lens for superposing into one the plurality of laser beams which are divided in the second direction.

8. A laser irradiation apparatus according to claim 3, wherein the laser is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

13. A laser irradiation apparatus according to claim 3, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

18. A laser irradiation apparatus according to claim 3, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

23. A laser irradiation apparatus according to claim 3, wherein the laser beam is converted into a harmonic by a non-linear optical element.

4. A laser irradiation apparatus, comprising:

a laser;

a first cylindrical lens array for dividing a laser beam emitted from the laser into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam;

a cylindrical lens for superposing into one the plurality of laser beams which are divided in the first direction;

a second cylindrical lens array for dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction; and

a convex cylindrical lens and a concave lens or a concave cylindrical lens for setting a convergent position of the laser beam superposed in the first direction on an irradiation surface and superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface.

9. A laser irradiation apparatus according to claim 4, wherein the laser is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

14. A laser irradiation apparatus according to claim 4, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

19. A laser irradiation apparatus according to claim 4, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

24. A laser irradiation apparatus according to claim 4, wherein the laser beam is converted into a harmonic by a non-linear optical element.

5. A laser irradiation apparatus, comprising:

a laser;

a first cylindrical lens array for dividing a laser beam emitted from the laser into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam;

a cylindrical lens for superposing into one the plurality of laser beams which are divided in the first direction;

a second cylindrical lens array for dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction; and

a toroidal lens or a crossed cylindrical lens for setting a convergent position of the laser beam superposed in the first direction on an irradiation surface and superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface.

10. A laser irradiation apparatus according to claim 5, wherein the laser is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

15. A laser irradiation apparatus according to claim 5, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

20. A laser irradiation apparatus according to claim 5, wherein the laser is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

25. A laser irradiation apparatus according to claim 5, wherein the laser beam is converted into a harmonic by a non-linear optical element.

26. A method of laser irradiation, comprising:

providing a laser beam with a uniform energy distribution in a first direction perpendicular to an optical axis of the laser beam;

regulating an optical path length of the laser beam to set a convergent position in the first direction on an irradiation surface;

providing the laser beam with a uniform energy distribution in a second direction perpendicular to both the optical axis and the first direction; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

36. A method of laser irradiation according to claim 26, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

46. A method of laser irradiation according to claim 26, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

56. A laser irradiation apparatus according to claim 26, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

66. A laser irradiation apparatus according to claim 26, wherein the laser beam is converted into a harmonic by a non-linear optical element.

27. A method of laser irradiation, comprising:

providing a laser beam with a uniform energy distribution in a first direction perpendicular to an optical axis of the laser beam;

providing the laser beam with a uniform energy distribution in a second direction perpendicular to both the optical axis and the first direction;

regulating an optical path length of the laser beam to set a convergent position in the second direction on an irradiation surface;

providing the laser beam with a uniform energy distribution; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

37. A method of laser irradiation according to claim 27, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

47. A method of laser irradiation according to claim 27, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

57. A laser irradiation apparatus according to claim 27, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

67. A laser irradiation apparatus according to claim 27, wherein the laser beam is converted into a harmonic by a non-linear optical element.

28. A method of laser irradiation, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface;

regulating an optical path length of the superposed laser beam to set a convergent position in the first direction on the irradiation surface;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction;

superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

38. A method of laser irradiation according to claim 28, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

48. A method of laser irradiation according to claim 28, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

58. A laser irradiation apparatus according to claim 28, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

68. A laser irradiation apparatus according to claim 28, wherein the laser beam is converted into a harmonic by a non-linear optical element.

29. A method of laser irradiation, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction;

superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface;

regulating an optical path length of the superposed laser beam to set a convergent position in the second direction on the irradiation surface; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

39. A method of laser irradiation according to claim 29, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

49. A method of laser irradiation according to claim 29, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

59. A laser irradiation apparatus according to claim 29, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

69. A laser irradiation apparatus according to claim 29, wherein the laser beam is converted into a harmonic by a non-linear optical element.

30. A method of laser irradiation, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a first cylindrical lens;

regulating an optical path length of the superposed laser beam by using a second cylindrical lens to set a convergent position of the superposed laser beam in the first direction on the irradiation surface;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface by using a third cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

40. A method of laser irradiation according to claim 30, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

50. A method of laser irradiation according to claim 30, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

60. A laser irradiation apparatus according to claim 30, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

70. A laser irradiation apparatus according to claim 30, wherein the laser beam is converted into a harmonic by a non-linear optical element.

31. A method of laser irradiation, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a first cylindrical lens;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface by using a third cylindrical lens;

regulating an optical path length of the superposed laser beam by using a third cylindrical lens to set a convergent position of the superposed laser beam in the second direction on the irradiation surface; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

41. A method of laser irradiation according to claim 31, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

51. A method of laser irradiation according to claim 31, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

61. A laser irradiation apparatus according to claim 31, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

71. A laser irradiation apparatus according to claim 31, wherein the laser beam is converted into a harmonic by a non-linear optical element.

32. A method of laser irradiation, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a cylindrical lens;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

regulating an optical path length to set a convergent position of the laser beam, which is divided in the first direction and superposed in the second direction, in the first direction on the irradiation surface, and superposing the laser beam on the irradiation surface in the second direction by using a convex cylindrical lens and a concave lens or a concave cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

42. A method of laser irradiation according to claim 32, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

52. A method of laser irradiation according to claim 32, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

62. A laser irradiation apparatus according to claim 32, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

72. A laser irradiation apparatus according to claim 32, wherein the laser beam is converted into a harmonic by a non-linear optical element.

33. A method of laser irradiation, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a cylindrical lens;

superposing the laser beam, which is divided in the first direction and superposed in the second direction, in the first direction on the irradiation surface, and regulating an optical path length in the second direction to set a convergent position on the irradiation surface by using a convex cylindrical lens and a concave lens or a concave cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

43. A method of laser irradiation according to claim 33, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

53. A method of laser irradiation according to claim 33, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

63. A laser irradiation apparatus according to claim 33, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

73. A laser irradiation apparatus according to claim 33, wherein the laser beam is converted into a harmonic by a non-linear optical element.

34. A method of laser irradiation, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a cylindrical lens;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

regulating an optical path length to set a convergent position of the laser beam, which is superposed in the first direction and divided in the second direction, in the first direction on the irradiation surface, and superposing the laser beam on the irradiation surface in the second direction by using a toroidal lens or a crossed cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

44. A method of laser irradiation according to claim 34, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

54. A method of laser irradiation according to claim 34, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

64. A laser irradiation apparatus according to claim 34, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

74. A laser irradiation apparatus according to claim 34, wherein the laser beam is converted into a harmonic by a non-linear optical element.

35. A method of laser irradiation, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a cylindrical lens;

superposing the laser beam, which is divided in the first direction and superposed in the second direction, in the first direction on the irradiation surface, and regulating an optical path length in the second direction to set a convergent position on the irradiation surface by using a toroidal lens or a crossed cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

45. A method of laser irradiation according to claim 35, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

55. A method of laser irradiation according to claim 35, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

65. A laser irradiation apparatus according to claim 35, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

75. A laser irradiation apparatus according to claim 35, wherein the laser beam is converted into a harmonic by a non-linear optical element.

76. A method of manufacturing a semiconductor device, comprising:

providing a laser beam with a uniform energy distribution in a first direction perpendicular to an optical axis of the laser beam;

regulating an optical path length of the laser beam to set a convergent position in the first direction on an irradiation surface;

providing the laser beam with a uniform energy distribution in a second direction perpendicular to both the optical axis and the first direction; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

86. A method of manufacturing a semiconductor device according to claim 76, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

96. A method of manufacturing a semiconductor device according to claim 76, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

106. A method of manufacturing a semiconductor device according to claim 76, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

116. A method of manufacturing a semiconductor device according to claim 76, wherein the laser beam is converted into a harmonic by a non-linear optical element.

126. A method of manufacturing a semiconductor device according to claim 76, wherein the semiconductor film contains silicon.

77. A method of manufacturing a semiconductor device, comprising:

providing a laser beam with a uniform energy distribution in a first direction perpendicular to an optical axis of the laser beam;

providing the laser beam with a uniform energy distribution in a second direction perpendicular to both the optical axis and the first direction;

regulating an optical path length of the laser beam to set a convergent position in the second direction on an irradiation surface; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

87. A method of manufacturing a semiconductor device according to claim 77, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

97. A method of manufacturing a semiconductor device according to claim 77, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

107. A method of manufacturing a semiconductor device according to claim 77, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

117. A method of manufacturing a semiconductor device according to claim 77, wherein the laser beam is converted into a harmonic by a non-linear optical element.

127. A method of manufacturing a semiconductor device according to claim 77, wherein the semiconductor film contains silicon.

78. A method of manufacturing a semiconductor device, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam;

superposing into one the plurality of laser beams which are divided in the first direction of the superposed laser beam on an irradiation surface;

regulating an optical path length of the superposed laser beam to set a convergent position in the first direction on the irradiation surface;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction;

superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

88. A method of manufacturing a semiconductor device according to claim 78, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

98. A method of manufacturing a semiconductor device according to claim 78, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

108. A method of manufacturing a semiconductor device according to claim 78, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

118. A method of manufacturing a semiconductor device according to claim 78, wherein the laser beam is converted into a harmonic by a non-linear optical element.

128. A method of manufacturing a semiconductor device according to claim 78, wherein the semiconductor film contains silicon.

79. A method of manufacturing a semiconductor device, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction;

superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface;

regulating an optical path length of the superposed laser beam to set a convergent position of the superposed laser beam in the second direction on the irradiation surface; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

89. A method of manufacturing a semiconductor device according to claim 79, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

99. A method of manufacturing a semiconductor device according to claim 79, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

109. A method of manufacturing a semiconductor device according to claim 79, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

119. A method of manufacturing a semiconductor device according to claim 79, wherein the laser beam is converted into a harmonic by a non-linear optical element.

129. A method of manufacturing a semiconductor device according to claim 79, wherein the semiconductor film contains silicon.

80. A method of manufacturing a semiconductor device, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a first cylindrical lens;

regulating an optical path length of the superposed laser beam by using a third cylindrical lens to set a convergent position of the superposed laser beam in the second direction on the irradiation surface;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface by using a third cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

90. A method of manufacturing a semiconductor device according to claim 80, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

100. A method of manufacturing a semiconductor device according to claim 80, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

110. A method of manufacturing a semiconductor device according to claim 80, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

120. A method of manufacturing a semiconductor device according to claim 80, wherein the laser beam is converted into a harmonic by a non-linear optical element.

130. A method of manufacturing a semiconductor device according to claim 80, wherein the semiconductor film contains silicon.

81. A method of manufacturing a semiconductor device, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a first cylindrical lens;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the second direction on the irradiation surface by using a second cylindrical lens;

regulating an optical path length of the superposed laser beam by using a third cylindrical lens to set a convergent position of the superposed laser beam in the second direction on the irradiation surface; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

91. A method of manufacturing a semiconductor device according to claim 81, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

101. A method of manufacturing a semiconductor device according to claim 81, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

111. A method of manufacturing a semiconductor device according to claim 81, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

121. A method of manufacturing a semiconductor device according to claim 81, wherein the laser beam is converted into a harmonic by a non-linear optical element.

131. A method of manufacturing a semiconductor device according to claim 81, wherein the semiconductor film contains silicon.

82. A method of manufacturing a semiconductor device, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a cylindrical lens;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

regulating an optical path length to set a convergent position of the laser beam, which is superposed in the first direction and divided in the second direction, in the first direction on the irradiation surface, and superposing the laser beam on the irradiation surface in the second direction by using a convex cylindrical lens and a concave lens or a concave cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

92. A method of manufacturing a semiconductor device according to claim 82, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

102. A method of manufacturing a semiconductor device according to claim 82, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

112. A method of manufacturing a semiconductor device according to claim 82, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

122. A method of manufacturing a semiconductor device according to claim 82, wherein the laser beam is converted into a harmonic by a non-linear optical element.

132. A method of manufacturing a semiconductor device according to claim 82, wherein the semiconductor film contains silicon.

83. A method of manufacturing a semiconductor device, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a cylindrical lens;

superposing the laser beam, which is divided in the first direction and superposed in the second direction, in the first direction on the irradiation surface, and regulating an optical path length in the second direction to set a convergent position on the irradiation surface by using a convex cylindrical lens and a concave lens or a concave cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

93. A method of manufacturing a semiconductor device according to claim 83, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

103. A method of manufacturing a semiconductor device according to claim 83, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

113. A method of manufacturing a semiconductor device according to claim 83, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

123. A method of manufacturing a semiconductor device according to claim 83, wherein the laser beam is converted into a harmonic by a non-linear optical element.

133. A method of manufacturing a semiconductor device according to claim 83, wherein the semiconductor film contains silicon.

84. A method of manufacturing a semiconductor device, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a cylindrical lens;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

regulating an optical path length to set a convergent position of the laser beam, which is superposed in the first direction and divided in the second direction, in the first direction on the irradiation surface by using a toroidal lens or a crossed cylindrical lens, and superposing the laser beam on the irradiation surface in the second direction; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

94. A method of manufacturing a semiconductor device according to claim 84, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

104. A method of manufacturing a semiconductor device according to claim 84, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YV0₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

114. A method of manufacturing a semiconductor device according to claim 84, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

124. A method of manufacturing a semiconductor device according to claim 84, wherein the laser beam is converted into a harmonic by a non-linear optical element.

134. A method of manufacturing a semiconductor device according to claim 84, wherein the semiconductor film contains silicon.

85. A method of manufacturing a semiconductor device, comprising:

dividing a laser beam into a plurality of laser beams in a first direction perpendicular to an optical axis of the laser beam by using a first cylindrical lens array;

dividing the laser beam into a plurality of laser beams in a second direction perpendicular to both the optical axis and the first direction by using a second cylindrical lens array;

superposing into one the plurality of laser beams which are divided in the first direction on an irradiation surface by using a cylindrical lens;

superposing the laser beam, which is divided in the first direction and superposed in the second direction, in the first direction on the irradiation surface, and regulating an optical path length in the second direction to set a convergent position on the irradiation surface by using a toroidal lens or a crossed cylindrical lens; and

irradiating the laser beam to an irradiation subject while moving the beam relative to the subject.

95. A method of manufacturing a semiconductor device according to claim 85, wherein the laser beam is a solid laser or gas laser of a continuous oscillation type or pulse oscillation type.

105. A method of manufacturing a semiconductor device according to claim 85, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

115. A method of manufacturing a semiconductor device according to claim 85, wherein the laser beam is one selected from the group consisting of a continuous oscillation or pulse oscillation excimer laser, Ar laser and Kr laser.

125. A method of manufacturing a semiconductor device according to claim 85, wherein the laser beam is converted into a harmonic by a non-linear optical element.

135. A method of manufacturing a semiconductor device according to claim 85, wherein the semiconductor film contains silicon.